Abstract: Oligonucleotide constructs are described, each comprising a functional element and a coding element, wherein the functional element comprises a functional sequence, the functional sequence comprising a sequence of nucleotides in which one or more, or each, nucleotide is modified and the coding element comprises a coding sequence, the coding sequence comprising a sequence of nucleotides which do not contain the modifications of the functional sequence, wherein the coding sequence encodes the sequence structure of the functional sequence.

Abstract: A method of manufacturing a Ni alloy part includes a solution treatment step of solution treating a sintered compact, which is obtained by sintering and molding a precipitation hardening Ni alloy powder by metal injection molding, by allowing the sintered compact to hold at a temperature of not lower than 1050° C. but not higher than 1250° C. for one hour to five hours, followed by rapidly cooling to room temperature, where the precipitation hardening Ni alloy powder, and an aging treatment step of aging-treating the solution-treated sintered compact by allowing the solution-treated sintered compact to hold at the temperature of not lower than 600° C. but not higher than 800° C., followed by cooling to room temperature.

Abstract: A fluid chip includes an intra-substrate flow path provided in a substrate, a surface-side insulating film as an insulating film provided on a surface of the substrate, an inflow opening portion provided on an upstream side of the intra-substrate flow path and allowing a sample to flow into the intra-substrate flow path, and an outflow opening portion provided on a downstream side of the intra-substrate flow path and allowing the sample to flow out of the intra-substrate flow path. The inflow opening portion and the outflow opening portion are provided in the surface-side insulating film and interconnected via the intra-substrate flow path.

Abstract: A method of manufacturing a Ni alloy part includes a solution treatment step of solution treating a sintered compact, which is obtained by sintering and molding a precipitation hardening Ni alloy powder by metal injection molding, by allowing the sintered compact to hold at a temperature of not lower than 1050° C. but not higher than 1250° C. for one hour to five hours, followed by rapidly cooling to room temperature, where the precipitation hardening Ni alloy powder, and an aging treatment step of aging-treating the solution-treated sintered compact by allowing the solution-treated sintered compact to hold at the temperature of not lower than 600° C. but not higher than 800° C., followed by cooling to room temperature.

Abstract: A method of manufacturing a Ni alloy part includes a solution treatment step of solution treating a sintered compact, which is obtained by sintering and molding a precipitation hardening Ni alloy powder by metal injection molding, by allowing the sintered compact to hold at a temperature of not lower than 1050° C. but not higher than 1250° C. for one hour to five hours, followed by rapidly cooling to room temperature, where the precipitation hardening Ni alloy powder, and an aging treatment step of aging-treating the solution-treated sintered compact by allowing the solution-treated sintered compact to hold at the temperature of not lower than 600° C. but not higher than 800° C., followed by cooling to room temperature.

Abstract: A system for detecting a biomolecule comprises a nano-gap electrode device including a first electrode and a second electrode adjacent to the first electrode. The first electrode can be separated from the second electrode by a nano-gap that is dimensioned to permit the biomolecule to flow through the nano-gap. The nano-gap can have at least a first gap region and a second gap region. The second gap region can be oriented at an angle that is greater than zero degrees with respect to a plane having the first gap region. The system can further include an electrical circuit coupled to the nano-gap electrode device. The electrical circuit can receive electrical signals from the first electrode and the second electrode upon the flow of the biomolecule through the nano-gap.

Abstract: A system for detecting a biomolecule comprises a nano-gap electrode device including a first electrode and a second electrode adjacent to the first electrode. The first electrode can be separated from the second electrode by a nano-gap that is dimensioned to permit the biomolecule to flow through the nano-gap. The nano-gap can have at least a first gap region and a second gap region. The second gap region can be oriented at an angle that is greater than zero degrees with respect to a plane having the first gap region. The system can further include an electrical circuit coupled to the nano-gap electrode device. The electrical circuit can receive electrical signals from the first electrode and the second electrode upon the flow of the biomolecule through the nano-gap.

Abstract: Methods for forming electrodes for use in nano-gap electrodes are provided. Such methods can be used to form electrodes for use in devices that can be used to sense or detect biomolecules, such as in biomolecule sequence applications.

Abstract: A system for detecting a biomolecule comprises a nano-gap electrode device including a first electrode and a second electrode adjacent to the first electrode. The first electrode can be separated from the second electrode by a nano-gap that is dimensioned to permit the biomolecule to flow through the nano-gap. The nano-gap can have at least a first gap region and a second gap region. The second gap region can be oriented at an angle that is greater than zero degrees with respect to a plane having the first gap region. The system can further include an electrical circuit coupled to the nano-gap electrode device. The electrical circuit can receive electrical signals from the first electrode and the second electrode upon the flow of the biomolecule through the nano-gap.

Abstract: Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one regions is provided per group of thirty two memory cell rows or sixty four cell rows.

Abstract: Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one regions is provided per group of thirty two memory cell rows or sixty four cell rows.

Abstract: Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one regions is provided per group of thirty two memory cell rows or sixty four cell rows.

Abstract: The present disclosure provides methods and structures for effectuating nanoelectrodes with an adjustable nanogap. Devices with integrated actuators (e.g., piezoelectric devices) and/or materials with different coefficients of expansion are described. Also described are methods for calibrations nanoelectrode pairs.

Abstract: The present disclosure provides biopolymer detection devices and systems, and methods for forming such devices and systems. A device for detecting a biopolymer comprises a channel that is configured to direct the biopolymer and a pair of electrodes in a portion of the channel. The pair of electrodes has surfaces that are substantially coplanar with adjacent surfaces of the channel. Surfaces of the pair of electrodes are exposed during use of the device to enable detection the biopolymer or a portion thereof with the aid of the pair of electrodes.

Abstract: Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one regions is provided per group of thirty two memory cell rows or sixty four cell rows.

Abstract: A method of manufacturing a Ni alloy part includes a solution treatment step of solution treating a sintered compact, which is obtained by sintering and molding a precipitation hardening Ni alloy powder by metal injection molding, by allowing the sintered compact to hold at a temperature of not lower than 1050° C. but not higher than 1250° C. for one hour to five hours, followed by rapidly cooling to room temperature, where the precipitation hardening Ni alloy powder, and an aging treatment step of aging-treating the solution-treated sintered compact by allowing the solution-treated sintered compact to hold at the temperature of not lower than 600° C. but not higher than 800° C., followed by cooling to room temperature.

Abstract: The present invention relates to a compound represented by Formulas 1, 2 or 3 as described herein, and a nucleic acid each of which contains a dye exhibiting an exciton effect, a method of producing such a nucleic acid by using the compound, and a kit for producing the nucleic acid.

Abstract: Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one regions is provided per group of thirty two memory cell rows or sixty four cell rows.

Abstract: A system for detecting a biomolecule comprises a nano-gap electrode device including a first electrode and a second electrode adjacent to the first electrode. The first electrode can be separated from the second electrode by a nano-gap that is dimensioned to permit the biomolecule to flow through the nano-gap. The nano-gap can have at least a first gap region and a second gap region. The second gap region can be oriented at an angle that is greater than zero degrees with respect to a plane having the first gap region. The system can further include an electrical circuit coupled to the nano-gap electrode device. The electrical circuit can receive electrical signals from the first electrode and the second electrode upon the flow of the biomolecule through the nano-gap.

Abstract: A P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one region is provided per group of thirty two memory cell rows or sixty four cell rows.