Patents by Inventor Shuji Ikeda

Shuji Ikeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210154665
    Abstract: A fluid chip includes an intra-substrate flow path provided in a substrate, a surface-side insulating film as an insulating film provided on a surface of the substrate, an inflow opening portion provided on an upstream side of the intra-substrate flow path and allowing a sample to flow into the intra-substrate flow path, and an outflow opening portion provided on a downstream side of the intra-substrate flow path and allowing the sample to flow out of the intra-substrate flow path. The inflow opening portion and the outflow opening portion are provided in the surface-side insulating film and interconnected via the intra-substrate flow path.
    Type: Application
    Filed: April 15, 2019
    Publication date: May 27, 2021
    Inventors: Shuji Ikeda, Naotaka Hashimoto
  • Publication number: 20200298310
    Abstract: A method of manufacturing a Ni alloy part includes a solution treatment step of solution treating a sintered compact, which is obtained by sintering and molding a precipitation hardening Ni alloy powder by metal injection molding, by allowing the sintered compact to hold at a temperature of not lower than 1050° C. but not higher than 1250° C. for one hour to five hours, followed by rapidly cooling to room temperature, where the precipitation hardening Ni alloy powder, and an aging treatment step of aging-treating the solution-treated sintered compact by allowing the solution-treated sintered compact to hold at the temperature of not lower than 600° C. but not higher than 800° C., followed by cooling to room temperature.
    Type: Application
    Filed: June 4, 2020
    Publication date: September 24, 2020
    Applicant: IHI Corporation
    Inventors: Nobuyasu Tsuno, Shuji Ikeda
  • Patent number: 10702923
    Abstract: A method of manufacturing a Ni alloy part includes a solution treatment step of solution treating a sintered compact, which is obtained by sintering and molding a precipitation hardening Ni alloy powder by metal injection molding, by allowing the sintered compact to hold at a temperature of not lower than 1050° C. but not higher than 1250° C. for one hour to five hours, followed by rapidly cooling to room temperature, where the precipitation hardening Ni alloy powder, and an aging treatment step of aging-treating the solution-treated sintered compact by allowing the solution-treated sintered compact to hold at the temperature of not lower than 600° C. but not higher than 800° C., followed by cooling to room temperature.
    Type: Grant
    Filed: October 5, 2016
    Date of Patent: July 7, 2020
    Assignee: IHI Corporation
    Inventors: Nobuyasu Tsuno, Shuji Ikeda
  • Patent number: 10466228
    Abstract: A system for detecting a biomolecule comprises a nano-gap electrode device including a first electrode and a second electrode adjacent to the first electrode. The first electrode can be separated from the second electrode by a nano-gap that is dimensioned to permit the biomolecule to flow through the nano-gap. The nano-gap can have at least a first gap region and a second gap region. The second gap region can be oriented at an angle that is greater than zero degrees with respect to a plane having the first gap region. The system can further include an electrical circuit coupled to the nano-gap electrode device. The electrical circuit can receive electrical signals from the first electrode and the second electrode upon the flow of the biomolecule through the nano-gap.
    Type: Grant
    Filed: November 2, 2018
    Date of Patent: November 5, 2019
    Assignee: QUANTUM BIOSYSTEMS INC.
    Inventors: Shuji Ikeda, Mark Oldham, Eric S. Nordman
  • Publication number: 20190310240
    Abstract: A system for detecting a biomolecule comprises a nano-gap electrode device including a first electrode and a second electrode adjacent to the first electrode. The first electrode can be separated from the second electrode by a nano-gap that is dimensioned to permit the biomolecule to flow through the nano-gap. The nano-gap can have at least a first gap region and a second gap region. The second gap region can be oriented at an angle that is greater than zero degrees with respect to a plane having the first gap region. The system can further include an electrical circuit coupled to the nano-gap electrode device. The electrical circuit can receive electrical signals from the first electrode and the second electrode upon the flow of the biomolecule through the nano-gap.
    Type: Application
    Filed: November 2, 2018
    Publication date: October 10, 2019
    Inventors: Shuji Ikeda, Mark Oldham, Eric S. Nordman
  • Patent number: 10438811
    Abstract: Methods for forming electrodes for use in nano-gap electrodes are provided. Such methods can be used to form electrodes for use in devices that can be used to sense or detect biomolecules, such as in biomolecule sequence applications.
    Type: Grant
    Filed: April 15, 2015
    Date of Patent: October 8, 2019
    Assignee: QUANTUM BIOSYSTEMS INC.
    Inventor: Shuji Ikeda
  • Patent number: 10261066
    Abstract: A system for detecting a biomolecule comprises a nano-gap electrode device including a first electrode and a second electrode adjacent to the first electrode. The first electrode can be separated from the second electrode by a nano-gap that is dimensioned to permit the biomolecule to flow through the nano-gap. The nano-gap can have at least a first gap region and a second gap region. The second gap region can be oriented at an angle that is greater than zero degrees with respect to a plane having the first gap region. The system can further include an electrical circuit coupled to the nano-gap electrode device. The electrical circuit can receive electrical signals from the first electrode and the second electrode upon the flow of the biomolecule through the nano-gap.
    Type: Grant
    Filed: April 13, 2016
    Date of Patent: April 16, 2019
    Assignee: QUANTUM BIOSYSTEMS INC.
    Inventors: Shuji Ikeda, Mark Oldham, Eric S. Nordman
  • Publication number: 20180261607
    Abstract: Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one regions is provided per group of thirty two memory cell rows or sixty four cell rows.
    Type: Application
    Filed: May 9, 2018
    Publication date: September 13, 2018
    Inventors: Kenichi Osada, Masataka Minami, Shuji Ikeda, Koichiro Ishibashi
  • Patent number: 9985038
    Abstract: Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one regions is provided per group of thirty two memory cell rows or sixty four cell rows.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: May 29, 2018
    Assignee: Renesas Electronics Corporation
    Inventors: Kenichi Osada, Masataka Minami, Shuji Ikeda, Koichiro Ishibashi
  • Publication number: 20170179136
    Abstract: Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one regions is provided per group of thirty two memory cell rows or sixty four cell rows.
    Type: Application
    Filed: March 2, 2017
    Publication date: June 22, 2017
    Inventors: Kenichi Osada, Masataka Minami, Shuji Ikeda, Koichiro Ishibashi
  • Publication number: 20170146510
    Abstract: The present disclosure provides methods and structures for effectuating nanoelectrodes with an adjustable nanogap. Devices with integrated actuators (e.g., piezoelectric devices) and/or materials with different coefficients of expansion are described. Also described are methods for calibrations nanoelectrode pairs.
    Type: Application
    Filed: November 4, 2016
    Publication date: May 25, 2017
    Inventors: Shuji Ikeda, Masateru Taniguchi
  • Publication number: 20170131237
    Abstract: The present disclosure provides biopolymer detection devices and systems, and methods for forming such devices and systems. A device for detecting a biopolymer comprises a channel that is configured to direct the biopolymer and a pair of electrodes in a portion of the channel. The pair of electrodes has surfaces that are substantially coplanar with adjacent surfaces of the channel. Surfaces of the pair of electrodes are exposed during use of the device to enable detection the biopolymer or a portion thereof with the aid of the pair of electrodes.
    Type: Application
    Filed: October 27, 2016
    Publication date: May 11, 2017
    Inventor: Shuji Ikeda
  • Patent number: 9646678
    Abstract: Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one regions is provided per group of thirty two memory cell rows or sixty four cell rows.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: May 9, 2017
    Assignee: Renesas Electronics Corporation
    Inventors: Kenichi Osada, Masataka Minami, Shuji Ikeda, Koichiro Ishibashi
  • Publication number: 20170021424
    Abstract: A method of manufacturing a Ni alloy part includes a solution treatment step of solution treating a sintered compact, which is obtained by sintering and molding a precipitation hardening Ni alloy powder by metal injection molding, by allowing the sintered compact to hold at a temperature of not lower than 1050° C. but not higher than 1250° C. for one hour to five hours, followed by rapidly cooling to room temperature, where the precipitation hardening Ni alloy powder, and an aging treatment step of aging-treating the solution-treated sintered compact by allowing the solution-treated sintered compact to hold at the temperature of not lower than 600° C. but not higher than 800° C., followed by cooling to room temperature.
    Type: Application
    Filed: October 5, 2016
    Publication date: January 26, 2017
    Applicant: IHI Corporation
    Inventors: Nobuyasu TSUNO, Shuji Ikeda
  • Patent number: 9499576
    Abstract: The present invention relates to a compound represented by Formulas 1, 2 or 3 as described herein, and a nucleic acid each of which contains a dye exhibiting an exciton effect, a method of producing such a nucleic acid by using the compound, and a kit for producing the nucleic acid.
    Type: Grant
    Filed: December 28, 2011
    Date of Patent: November 22, 2016
    Assignee: RIKEN
    Inventors: Akimitsu Okamoto, Shuji Ikeda
  • Publication number: 20160329091
    Abstract: Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one regions is provided per group of thirty two memory cell rows or sixty four cell rows.
    Type: Application
    Filed: July 21, 2016
    Publication date: November 10, 2016
    Inventors: Kenichi Osada, Masataka Minami, Shuji Ikeda, Koichiro Ishibashi
  • Publication number: 20160320364
    Abstract: A system for detecting a biomolecule comprises a nano-gap electrode device including a first electrode and a second electrode adjacent to the first electrode. The first electrode can be separated from the second electrode by a nano-gap that is dimensioned to permit the biomolecule to flow through the nano-gap. The nano-gap can have at least a first gap region and a second gap region. The second gap region can be oriented at an angle that is greater than zero degrees with respect to a plane having the first gap region. The system can further include an electrical circuit coupled to the nano-gap electrode device. The electrical circuit can receive electrical signals from the first electrode and the second electrode upon the flow of the biomolecule through the nano-gap.
    Type: Application
    Filed: April 13, 2016
    Publication date: November 3, 2016
    Inventors: Shuji Ikeda, Mark Oldham, Eric S. Nordman
  • Patent number: 9449678
    Abstract: A P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one region is provided per group of thirty two memory cell rows or sixty four cell rows.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: September 20, 2016
    Assignee: Renesas Electronics Corporation
    Inventors: Kenichi Osada, Masataka Minami, Shuji Ikeda, Koichiro Ishibashi
  • Publication number: 20160245789
    Abstract: The present disclosure provides methods for forming a nano-gap electrode. In some cases, a nano-gap having a width adjusted by a film thickness of a sidewall may be formed between a first electrode-forming part and a second electrode-forming part using sidewall which has contact with first electrode-forming part as a mask. Surfaces of the first electrode-forming part, the sidewall and the second electrode-forming part may then be exposed. The sidewall may then be removed to form a nano-gap between the first electrode-forming part and the second electrode-forming part.
    Type: Application
    Filed: February 19, 2016
    Publication date: August 25, 2016
    Inventors: Shuji Ikeda, Mark Oldham, Eric Nordman
  • Publication number: 20160221081
    Abstract: In a method for jointing metal injection molded parts, [1] at least two metal injection molded parts each of which is injection-molded from mixtures of metal powders and binders are contacted with each other, [2] paste agents containing nitrogen or chlorine are pasted on a jointed portion at which the at least two metal injection molded parts are contacted with each other, and [3] the at least two metal injection molded parts are jointed at the jointed portion by degreasing or sintering, and thereby a metal product is manufactured. According to the jointing method, jointing strength of the jointed portion can be improved.
    Type: Application
    Filed: April 7, 2016
    Publication date: August 4, 2016
    Applicant: IHI Corporation
    Inventors: Hiroki Yoshizawa, Shigeyuki Satoh, Nobuyasu Tsuno, Natsuki Yoneyama, Shuji Ikeda, Takashi Yoshinouchi, Masayuki Satake