Abstract: An object of the present invention is to provide a composition for forming an organic semiconductor film that makes it possible to obtain an organic semiconductor film having excellent mobility and heat stability, an organic semiconductor element including an organic semiconductor film having excellent mobility and heat stability, and a method for manufacturing the organic semiconductor element.

Abstract: An object of the present invention is to provide a composition for forming an organic semiconductor film that makes it possible to obtain an organic semiconductor film having excellent mobility and heat stability, an organic semiconductor element including an organic semiconductor film having excellent mobility and heat stability, and a method for manufacturing the organic semiconductor element.

Abstract: A metal substrate with an insulation layer has a metallic substrate having at least an aluminum base, and an insulation layer formed on the aluminum base of the metallic substrate. The insulation layer is a anodized film of aluminum that has a porous structure having plural pores and a Martens hardness of 1000 N/mm2 to 3500 N/mm2. A ratio of an average pore size of the plural pores to an average wall thickness of the plural pores ranges from 0.2 to 0.5.

Abstract: A liquid crystalline composition is disclosed. The composition comprises at least one liquid-crystal compound and at least one fluoroaliphatic group-containing polymer of a formula (1-1). In the formula, i and j each indicate an integer equal to or more than 1; M represents k types of repetitive units each derived from an ethylenic unsaturated monomer (k indicates an integer equal to or more than 1); a, b and c each mean a mass percentage indicating a polymerization ratio; R11 and R12 each represent a hydrogen atom or a methyl group; X1 and X2 each represent an oxygen atom, a sulfur atom or —N(R13)—; R13 represents a hydrogen atom or an alkyl group having from 1 to 4 carbon atoms; m1 and m2 each indicate an integer of from 1 to 6; and n1 indicates an integer of from 0 to 3.

Abstract: The optical information recording medium comprises a recording layer on a support, wherein the recording layer comprises a dye having a film-softening temperature of equal to or higher than 290° C.

Abstract: A liquid crystalline composition is disclosed. The composition comprises at least one liquid-crystal compound and at least one fluoroaliphatic group-containing polymer of a formula (1-1). In the formula, i and j each indicate an integer equal to or more than 1; M represents k types of repetitive units each derived from an ethylenic unsaturated monomer (k indicates an integer equal to or more than 1); a, b and c each mean a mass percentage indicating a polymerization ratio; R11 and R12 each represent a hydrogen atom or a methyl group; X1 and X2 each represent an oxygen atom, a sulfur atom or —N(R13)—; R13 represents a hydrogen atom or an alkyl group having from 1 to 4 carbon atoms; m1 and m2 each indicate an integer of from 1 to 6; and n1 indicates an integer of from 0 to 3.

Abstract: An image recording sheet used in electrophotographic imaging which comprises a paper sheet substrate coated with an image recording layer that takes on a probe penetration depth of 0.33 ?m or greater for a change in prove temperature from 50° to 150° C. when measuring the probe penetration depth on a scanning type thermal microscope having a thermal probe operative as both heater and position sensor that is made of a Pt alloy containing 10% of Rh and has a cantilever spring constant of 1 N/m, a diameter of 6 ?m and a curvature radius of 5 ?m at an extreme end thereof under a condition that the thermal prove is changed in temperature at a programming rate of 15° C./sec within a programmed range of from a room temperature to 200° C. under a load (weight)+20 nA in 4-split T-B (Top-Bottom) value.

Abstract: An image recording sheet used in electrophotographic imaging which comprises a paper sheet substrate coated with an image recording layer that takes on a probe penetration depth of 0.33 ?m or greater for a change in prove temperature from 50° to 150° C. when measuring the probe penetration depth on a scanning type thermal microscope having a thermal probe operative as both heater and position sensor that is made of a Pt alloy containing 10% of Rh and has a cantilever spring constant of 1 N/m, a diameter of 6 ?m and a curvature radius of 5 ?m at an extreme end thereof under a condition that the thermal prove is changed in temperature at a programming rate of 15° C./sec within a programmed range of from a room temperature to 200° C. under a load (weight)+20 nA in 4-split T-B (Top-Bottom) value.