Patents by Inventor Shuji Kodaira
Shuji Kodaira has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210348263Abstract: [Object] A film is deposited on a substrate with high productivity and more uniform film thickness distribution. [Solving Means] In a deposition apparatus, a substrate holder supports at least one substrate facing a first target, rotates around a first central axis, and is configured such that the substrate is rotatable around a second central axis deviated from the first central axis. A vacuum chamber houses the first target and the substrate holder. A power source supplies discharge power to the first target. A gas supply mechanism supplies a discharge gas to the vacuum chamber.Type: ApplicationFiled: October 30, 2019Publication date: November 11, 2021Inventors: Shuji KODAIRA, Teppei TAKAHASHI, Takahiro TOBIISHI, Norifumi YAMAMURA, Hiroaki KATAGIRI, Junya KUBO, Masaaki SUZUKI
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Publication number: 20210230741Abstract: A method of forming a film of this invention includes: rotating, inside a vacuum chamber, a to-be-processed substrate with a center of the to-be-processed substrate, while revolving the to-be-processed substrate on the same plane about a revolution shaft; and feeding a film-forming material from a film-forming source to form a predetermined thin film on a surface of the to-be-processed substrate.Type: ApplicationFiled: December 11, 2019Publication date: July 29, 2021Applicant: ULVAC, INC.Inventors: Shuji Kodaira, Teppei Takahashi, Takahiro Tobiishi, Norifumi Yamamura, Hiroaki Katagiri, Junya Kubo, Masaaki Suzuki
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Patent number: 9337092Abstract: A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.Type: GrantFiled: September 20, 2012Date of Patent: May 10, 2016Assignee: ULVAC, INC.Inventors: Junichi Hamaguchi, Shuji Kodaira, Yuta Sakamoto, Akifumi Sano, Koukichi Kamada, Yoshiyuki Kadokura, Joji Hiroishi, Yukinobu Numata, Koji Suzuki
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Publication number: 20150221552Abstract: A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.Type: ApplicationFiled: September 20, 2012Publication date: August 6, 2015Inventors: Junichi Hamaguchi, Shuji Kodaira, Yuta Sakamoto, Akifumi Sano, Koukichi Kamada, Yoshiyuki Kadokura, Joji Hiroishi, Yukinobu Numata, Koji Suzuki
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Patent number: 9005413Abstract: A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.Type: GrantFiled: July 15, 2010Date of Patent: April 14, 2015Assignee: ULVAC, Inc.Inventors: Shuji Kodaira, Tomoyuki Yoshihama, Koukichi Kamada, Kazumasa Horita, Junichi Hamaguchi, Shigeo Nakanishi, Satoru Toyoda
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Publication number: 20140332959Abstract: A method of manufacturing a semiconductor device includes: a groove portion formation step of forming a groove portion in a base; a barrier layer formation step of forming a barrier layer that covers at least an inner wall surface of the groove portion; a seed layer formation step of forming a seed layer that covers the barrier layer; and a burial step of burying a conductive material in an inside region of the seed layer, wherein the seed layer is made of Cu, and the conductive material is made of Cu.Type: ApplicationFiled: September 21, 2012Publication date: November 13, 2014Applicant: ULVAC, INC.Inventors: Junichi Hamaguchi, Shuji Kodaira, Yuta Sakamoto, Akifumi Sano, Koukichi Kamada, Yoshiyuki Kadokura, Joji Hiroishi, Yukinobu Numata, Koji Suzuki
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Patent number: 8883632Abstract: A manufacturing method of a device including: a first process in which a barrier film is formed on a substrate with a concave portion provided on one surface thereof so as to cover an inner wall surface of the concave portion; a second process in which a conductive film is formed so as to cover the barrier film; and a third process in which the conductive film is melted by a reflow method, wherein the method includes a process ? between the second process and the third process, in which the substrate with the barrier film and the conductive film laminated thereon in this order is exposed to an atmosphere under a pressure A for a time period B, and wherein in the process ?, control is carried out such that a product of the pressure A and the time period B is not greater than 6×10?4 [Pa·s].Type: GrantFiled: January 9, 2013Date of Patent: November 11, 2014Assignee: ULVAC, Inc.Inventors: Youhei Endo, Shuji Kodaira, Yuta Sakamoto, Junichi Hamaguchi, Yohei Uchida, Yasushi Higuchi, Shinya Nakamura, Kazuyoshi Hashimoto, Yoshihiro Ikeda, Hiroaki Iwasawa
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Publication number: 20140048413Abstract: There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state.Type: ApplicationFiled: October 23, 2013Publication date: February 20, 2014Applicant: ULVAC, INC.Inventors: Shuji KODAIRA, Tomoyuki YOSHIHAMA, Koukichi KAMADA, Kazumasa HORITA, Junichi HAMAGUCHI, Shigeo NAKANISHI, Satoru TOYODA
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Publication number: 20120118732Abstract: A film formation apparatus includes: a chamber having a side wall and an inner space in which both a body to be processed and a target are disposed a first magnetic field generation section generating a magnetic field in the inner space a second magnetic field generation section disposed at a position close to the target, the second magnetic field generation section generating a magnetic field so as to allow perpendicular magnetic lines of force thereof to pass through a position adjacent to the target; and a third magnetic field generation section disposed at a position close to the body to be processed, the third magnetic field generation section generating a magnetic field so as to induce the magnetic lines of force to the side wall of the chamber.Type: ApplicationFiled: July 15, 2010Publication date: May 17, 2012Applicant: ULVAC, INC.Inventors: Shuji Kodaira, Tomoyuki Yoshihama, Koukichi Kamada, Kazumasa Horita, Junichi Hamaguchi, Shigeo Nakanishi, Satoru Toyoda
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Publication number: 20120121818Abstract: A coating surface processing method includes forming a coating on the entire surface of a base body that has fine holes or fine grooves formed on the to-be-filmed surface, including the inner wall surfaces and the inner bottom surfaces of the holes or the grooves, and flattening the coating formed on the inner wall surfaces of the holes or the grooves by carrying out a plasma processing on the surface of the coating.Type: ApplicationFiled: July 21, 2010Publication date: May 17, 2012Applicant: ULVAC, INC.Inventors: Shuji Kodaira, Tomoyuki Yoshihama, Koukichi Kamada, Kazumasa Horita, Junichi Hamaguchi, Shigeo Nakanishi, Satoru Toyoda
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Publication number: 20120111722Abstract: There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state.Type: ApplicationFiled: July 15, 2010Publication date: May 10, 2012Applicant: ULVAC, INC.Inventors: Shuji Kodaira, Tomoyuki Yoshihama, Koukichi Kamada, Kazumasa Horita, Junichi Hamaguchi, Shigeo Nakanishi, Satoru Toyoda
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Publication number: 20120103801Abstract: A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.Type: ApplicationFiled: July 15, 2010Publication date: May 3, 2012Applicant: ULVAC, INC.Inventors: Shuji Kodaira, Tomoyuki Yoshihama, Koukichi Kamada, Kazumasa Horita, Junichi Hamaguchi, Shigeo Nakanishi, Satoru Toyoda
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Publication number: 20120097527Abstract: A film formation apparatus includes: a chamber in which both a body to be processed and a target are disposed; a first magnetic field generation section generating a magnetic field; and a second magnetic field generation section including a first generation portion to which a current defined as “Iu” is applied and a second generation portion to which a current defined as “Id” is applied, the first generation portion being disposed at a position close to the target, the second generation portion being disposed at a position close to the body to be processed, the second magnetic field generation section applying the currents to the first generation portion and the second generation portion so as to satisfy the relational expression Id<Iu, the second magnetic field generation section allowing perpendicular magnetic lines to pass between the target and the body to be processed.Type: ApplicationFiled: July 15, 2010Publication date: April 26, 2012Applicant: ULVAC, INC.Inventors: Shuji Kodaira, Tomoyuki Yoshihama, Koukichi Kamada, Kazumasa Horita, Junichi Hamaguchi, Shigeo Nakanishi, Satoru Toyoda