Abstract: A method is provided for determining a measure of error of a device under test (DUT). The method includes storing baseband data received from the DUT in a storage device, segmenting the baseband data into multiple data segments, determining processing parameters for one data segment of the plurality of data segments, and storing the determined processing parameters for the one data segment. The method further includes retrieving additional data segments of the multiple data segments from the storage device, and processing the additional data segments using the stored processing parameters for the one data segment. The measure of error of the DUT is determined based at least in part on data from the processed additional data segments.

Abstract: A V?9V?2 T cell proliferation agent includes at least a bisphosphonate, interleukin 2, and interleukin 18. Since IL-18 has properties that improve cell viability by inhibiting cell death, IL-18 is presumably capable of acting as a cofactor for the bisphosphonate so as to significantly increase the effect of V?9V?2 T cell proliferation by the bisphosphonate and the IL-2. This allows providing a V?9V?2 T cell proliferation agent capable of growing V?9V?2 T cells with a proliferated efficiency significantly high compared to conventional methods so that the proliferated V?9V?2 T cells have a high antitumor activity and high cytokine productivity.

Abstract: A V?9V?2 T cell proliferation agent includes at least a bisphosphonate, interleukin 2, and interleukin 18. Since has properties that improve cell viability by inhibiting cell death, IL-18 is presumably capable of acting as a cofactor for the bisphosphonate so as to significantly increase the effect of V?9V?2 T cell proliferation by the bisphosphonate and the IL-2. This allows providing a V?9V?2 T cell proliferation agent capable of growing V?9V?2 T cells with a proliferated efficiency significantly high compared to conventional methods so that the proliferated V?9V?2 T cells have a high antitumor activity and high cytokine productivity.

Abstract: An n-type epitaxial layer is grown on a p-type silicon substrate. The epitaxial layer is photo-etched to provide a plurality of isolated regions of n-type conductivity. A silicon dioxide layer is provided on a surface covering the isolated regions and etched portions. The oxide layer is etched to provide a window which allows external light to fall on the exposed isolated region. Heat treatment steps have been reduced to a minimum to prevent lattice defects from occurring, resulting in a photodiode having a higher sensitivity to the visible spectrum range with less dark current.