Abstract: An imaging element including: a photoelectric conversion layer including a compound semiconductor material; a contact layer disposed to be stacked on the photoelectric conversion layer and including a diffusion region of first electrically-conductive type impurities in a selective region; a first insulating layer provided to be opposed to the photoelectric conversion layer with the contact layer interposed therebetween and having a first opening at a position facing the diffusion region; and a second insulating layer provided to be opposed to the contact layer with the first insulating layer interposed therebetween and having a second opening that communicates with the first opening and is smaller than the first opening.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes two or more pixels. The pixels each include a photoelectric converter, a charge holding section, and a transfer transistor. The charge holding section holds electric charge transferred from the photoelectric converter. The transfer transistor transfers electric charge from the photoelectric converter to the charge holding section. The pixels each further include a light blocking section that is disposed in a layer between the photoelectric converter and the charge holding section. The light blocking section has an opening which a vertical gate runs through. The pixels each further include a charge blocking section that blocks transfer of electric charge to the transfer transistor via a region between an edge, of the opening, closer to the charge holding section and the vertical gate.

Abstract: An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.

Abstract: An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.

Abstract: A light receiving element (1) according to an embodiment of the present disclosure includes: a semiconductor layer including a compound semiconductor material; a first impurity diffusion region (12A) provided on one surface of the semiconductor layer; and a second impurity diffusion region (12B) provided around the first impurity diffusion region (12A). The second impurity diffusion region (12B) has a lower impurity concentration than an impurity concentration of the first impurity diffusion region (12A).

Abstract: A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

Abstract: A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

Abstract: An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.

Abstract: There is provided a light-detecting device. A light-detecting device includes a first substrate including a first electrode, a semiconductor layer, a first insulating film, and a via, and a second substrate that faces the first substrate and is electrically connected to the semiconductor layer through the via. The semiconductor layer includes a compound semiconductor material. The first electrode includes a first portion and the second portion. The first portion of the first electrode is in contact with the semiconductor layer, and the second portion is in contact with both the first insulating film and the via.

Abstract: There is provided a light detecting device. The light detecting device includes an element substrate including an element region and a peripheral region and a circuit substrate that faces the element substrate and is electrically connected to the semiconductor layer through the first wiring layer. The element region includes a first wiring layer and a semiconductor layer. The semiconductor layer includes a compound semiconductor material, and the peripheral region is outside the element region in a plan view. An outer boundary of the element substrate is different from an outer boundary of the circuit substrate.

Abstract: An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.

Abstract: A light-receiving device includes at least one pixel. The at least one pixel includes a first electrode; a second electrode; and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer is configured to convert incident infrared light into electric charge. The photoelectric conversion layer has a first section and a second section. The first section is closer to the first electrode than the second section, and the second section is closer to the second electrode than the first section. At least one of the first section and the second section have a plurality of surfaces.

Abstract: There is provided a solid-state imaging device including: a first semiconductor layer including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated; a pixel separation section that is provided in the first semiconductor layer, and partitions a plurality of the pixels from each other; a second semiconductor layer that is provided with a pixel transistor and is stacked on the first semiconductor layer, the pixel transistor that reads the signal electric charge of the electric charge accumulation section; and a first shared coupling section that is provided between the second semiconductor layer and the first semiconductor layer, and is provided to straddle the pixel separation section and is electrically coupled to a plurality of the electric charge accumulation sections.

Abstract: A light receiving element (1) according to an embodiment of the present disclosure includes: a semiconductor layer including a compound semiconductor material; a first impurity diffusion region (12A) provided on one surface of the semiconductor layer; and a second impurity diffusion region (12B) provided around the first impurity diffusion region (12A). The second impurity diffusion region (12B) has a lower impurity concentration than an impurity concentration of the first impurity diffusion region (12A).

Abstract: According to the present disclosure, there is provided an imaging device including: a first semiconductor layer (180) formed on a semiconductor substrate; a second semiconductor layer (170) formed on the first semiconductor layer (180) and having an opposite conductivity type to the first semiconductor layer (180); a pixel separation portion (150) configured to demarcate a pixel region including the first semiconductor layer (180) and the second semiconductor layer (170); a first electrode (130) connected to the first semiconductor layer (180) from one surface side of the semiconductor substrate; and a metal layer (152) connected to the second semiconductor layer (170) from a light irradiation surface side which is the other surface of the semiconductor substrate and buried in the pixel separation portion (150) in at least a part of the semiconductor substrate in a thickness direction.

Abstract: An imaging element including: a photoelectric conversion layer including a compound semiconductor material; a contact layer disposed to be stacked on the photoelectric conversion layer and including a diffusion region of first electrically-conductive type impurities in a selective region; a first insulating layer provided to be opposed to the photoelectric conversion layer with the contact layer interposed therebetween and having a first opening at a position facing the diffusion region; and a second insulating layer provided to be opposed to the contact layer with the first insulating layer interposed therebetween and having a second opening that communicates with the first opening and is smaller than the first opening.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes two or more pixels. The pixels each include a photoelectric converter, a charge holding section, and a transfer transistor. The charge holding section holds electric charge transferred from the photoelectric converter. The transfer transistor transfers electric charge from the photoelectric converter to the charge holding section. The pixels each further include a light blocking section that is disposed in a layer between the photoelectric converter and the charge holding section. The light blocking section has an opening which a vertical gate runs through. The pixels each further include a charge blocking section that blocks transfer of electric charge to the transfer transistor via a region between an edge, of the opening, closer to the charge holding section and the vertical gate.

Abstract: An imaging device according to the disclosure includes: a semiconductor substrate including an effective pixel region in which a plurality of pixels are disposed, and a peripheral region provided around the effective pixel region; an organic photoelectric conversion layer provided on side of the semiconductor substrate on which a light receiving surface is disposed; a first sealing layer provided on the semiconductor substrate; a recess provided in the first sealing layer on the effective pixel region; and a light shielding film provided on the first sealing layer on the peripheral region.

Abstract: The present technology relates to an imaging device, a manufacturing device, and a manufacturing method. The imaging device includes an organic photoelectric conversion film, an upper electrode provided in an upper portion of the organic photoelectric conversion film, a lower electrode provided in a lower portion of the organic photoelectric conversion film, and a metal thin film provided between the organic photoelectric conversion film and the upper electrode or between the organic photoelectric conversion film and the lower electrode. The metal thin film is provided between the organic photoelectric conversion film and the upper electrode. The upper electrode is formed of an oxide semiconductor, a metal oxide, and the metal thin film. The present technology can be applied to a vertical spectral imaging device.

Abstract: A light-receiving device includes at least one pixel. The at least one pixel includes a first electrode; a second electrode; and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer is configured to convert incident infrared light into electric charge. The photoelectric conversion layer has a first section and a second section. The first section is closer to the first electrode than the second section, and the second section is closer to the second electrode than the first section. At least one of the first section and the second section have a plurality of surfaces.