Abstract: A nonaqueous electrolyte secondary battery includes an exterior package, an electrode assembly, and an electrolyte solution. The exterior package stores the electrode assembly and the electrolyte solution. The electrode assembly is shaped to have a flat shape. The electrode assembly includes a layered body. The layered body includes a first separator, a positive electrode plate, a second separator, and a negative electrode plate. The first separator, the positive electrode plate, the second separator, and the negative electrode plate are layered in this order. The electrode assembly is formed by spirally winding the layered body. Each of the first separator and the second separator has a proportional limit of less than or equal to 10.2 MPa. The proportional limit is measured in a compression test in a thickness direction of each of the first separator and the second separator.

Abstract: A magnetic field analysis device includes a magnetization application unit that divides a virtual space into a plurality of volume elements and applies magnetization to each of the volume elements, and a magnetic field calculation unit that calculates, on each of a plurality of observation points in the virtual space, based on the magnetization applied to a plurality of the volume elements around the observation point, a magnetic field generated at the observation point for each volume element and obtains a magnetic field generated at each of the plurality of the observation points based on a calculation result of each of the plurality of the volume elements.

Abstract: A magnetic field analysis method includes: dividing each analysis object of a system including at least one analysis object into a plurality of beads; applying a magnetic moment to each bead; and obtaining an induced magnetic field at a position of each bead when an external magnetic field changes over time, in which each bead is divided into a plurality of triangular pyramid or triangular elements, a vector potential at an observation point included in a virtual space is described as a function of an electromagnetic physical quantity in a minute region in the analysis object and a distance from the minute region to the observation point, and the induced magnetic field at the observation point is obtained by numerically volume-integrating or surface-integrating the function of the vector potential for each of the elements obtained by division.

Abstract: A forming device that expands a metal pipe material to form a metal pipe includes a die that has an upper die and a lower die, at least one of which is movable, and that form the metal pipe, an electrode that energizes the metal pipe material to heat the metal pipe material, a gas supply part that supplies a gas into the heated metal pipe material to expand the metal pipe material, and a die movement suppressing part that suppresses the movement of the die by an electromagnetic force at least when the energization to the metal pipe material is performed by the electrode.

Abstract: A change in a current flowing through a current path when a voltage applied to the path is changed is simulated in a system including the path and a member that is acted upon by the current flowing through the path and affects the current flowing through the path. First, the path and the member are represented by aggregates of a plurality of particles. Electromagnetic action from the other particles to each of the plurality of particles configuring the path is calculated based on a current value at a present time of the current flowing through the path and a voltage value of an external voltage applied to the path. The current flowing through the path is calculated based on a calculation result of the electromagnetic action to update the current value flowing through the path from the value at the present time to a value obtained by a calculation.

Abstract: A magnetic field analysis device includes a magnetization application unit that divides a virtual space into a plurality of volume elements and applies magnetization to each of the volume elements, and a magnetic field calculation unit that calculates, on each of a plurality of observation points in the virtual space, based on the magnetization applied to a plurality of the volume elements around the observation point, a magnetic field generated at the observation point for each volume element and obtains a magnetic field generated at each of the plurality of the observation points based on a calculation result of each of the plurality of the volume elements.

Abstract: A value of a parameter defining a linear term and a value of a parameter defining a nonlinear term of an interaction potential between particles determined according to a material to be simulated and an initial condition of a particle disposition are input to an input unit. A processing unit analyzes behavior of the particles by a molecular dynamics method using the interaction potential defined by the values of the parameters input to the input unit and based on the initial condition input to the input unit.

Abstract: An analyzer includes a magnetic moment application unit configured to apply a magnetic moment to a particle system defined in a virtual space, a magnetic field calculation unit configured to calculate a magnetic physical quantity related to the particle system including particles, to which the magnetic moment is applied by the magnetic moment application unit, and a particle state calculation unit configured to numerically calculate a governing equation, which governs the movement of each particle, using the calculation result in the magnetic field calculation unit. The magnetic field calculation unit numerically calculates an induction magnetic field using induced magnetization induced in each particle due to a time variation in an external magnetic field and a magnetic field obtained by interaction between magnetic moments based on the induced magnetization.

Abstract: A change in a current flowing through a current path when a voltage applied to the path is changed is simulated in a system including the path and a member that is acted upon by the current flowing through the path and affects the current flowing through the path. First, the path and the member are represented by aggregates of a plurality of particles. Electromagnetic action from the other particles to each of the plurality of particles configuring the path is calculated based on a current value at a present time of the current flowing through the path and a voltage value of an external voltage applied to the path. The current flowing through the path is calculated based on a calculation result of the electromagnetic action to update the current value flowing through the path from the value at the present time to a value obtained by a calculation.

Abstract: A coupled simulation of a structural-elastic phenomenon and a heat conduction phenomenon of a simulation target including plural particles is performed. Here, numerical calculation of a motion equation capable of being transformed into an equation of the same form as that of a heat conduction equation is performed with respect to a term of a spatial temperature distribution and a term of a derivative of temperature with respect to time, to perform a simulation of the heat conduction phenomenon of the simulation target.

Abstract: A forming device that expands a metal pipe material to form a metal pipe includes a die that has an upper die and a lower die, at least one of which is movable, and that form the metal pipe, an electrode that energizes the metal pipe material to heat the metal pipe material, a gas supply part that supplies a gas into the heated metal pipe material to expand the metal pipe material, and a die movement suppressing part that suppresses the movement of the die by an electromagnetic force at least when the energization to the metal pipe material is performed by the electrode.

Abstract: A coupled simulation of a structural-elastic phenomenon and a heat conduction phenomenon of a simulation target including plural particles is performed. Here, numerical calculation of a motion equation capable of being transformed into an equation of the same form as that of a heat conduction equation is performed with respect to a term of a spatial temperature distribution and a term of a derivative of temperature with respect to time, to perform a simulation of the heat conduction phenomenon of the simulation target.

Abstract: An analyzer comprises a particle system acquisition unit operative to acquire information on a particle system defined in a virtual space; a magnetic moment association unit operative to associate a particle in the particle system with a magnetic moment; a numerical operation unit operative to perform numerical operation according to a governing equation that governs a motion of each particle in the particle system, the particle system including the particle which is associated with the magnetic moment by the magnetic moment association unit; and a magnetic field calculation unit operative to calculate a magnetic field created by the particle system using the results of the numerical operation performed by the numerical operation unit.

Abstract: An analyzer includes a magnetic moment application unit configured to apply a magnetic moment to a particle system defined in a virtual space, a magnetic field calculation unit configured to calculate a magnetic physical quantity related to the particle system including particles, to which the magnetic moment is applied by the magnetic moment application unit, and a particle state calculation unit configured to numerically calculate a governing equation, which governs the movement of each particle, using the calculation result in the magnetic field calculation unit. The magnetic field calculation unit numerically calculates an induction magnetic field using induced magnetization induced in each particle due to a time variation in an external magnetic field and a magnetic field obtained by interaction between magnetic moments based on the induced magnetization.

Abstract: An analyzer comprises a particle system acquisition unit operative to acquire information on a particle system defined in a virtual space; a magnetic moment association unit operative to associate a particle in the particle system with a magnetic moment; a numerical operation unit operative to perform numerical operation according to a governing equation that governs a motion of each particle in the particle system, the particle system including the particle which is associated with the magnetic moment by the magnetic moment association unit; and a magnetic field calculation unit operative to calculate a magnetic field created by the particle system using the results of the numerical operation performed by the numerical operation unit.

Abstract: The present invention is a user interface of the semiconductor evaluation device, which evaluates the characteristics of the semiconductor elements on a wafer. This user interface provides means on which a setting window is displayed in order to conduct the setting of the measurement conditions to each setting object having a hierarchical relation, means on which a main setting window is displayed to manage the setting window, means to save in a file the measurement conditions set in the setting window, and means to load the measurement conditions that are set in the first setting window for the first setting object and saved in a file for the second setting window to the second setting object, which is located at higher level than the first setting window and is able to set up selectively to the user the measurement conditions loaded in the second setting window.

Abstract: The present invention is a user interface of the semiconductor evaluation device, which evaluates the characteristics of the semiconductor elements on a wafer. This user interface provides means on which a setting window is displayed in order to conduct the setting of the measurement conditions to each setting object having a hierarchical relation, means on which a main setting window is displayed to manage the setting window, means to save in a file the measurement conditions set in the setting window, and means to load the measurement conditions that are set in the first setting window for the first setting object and saved in a file for the second setting window to the second setting object, which is located at higher level than the first setting window and is able to set up selectively to the user the measurement conditions loaded in the second setting window.

Abstract: The present invention provides a method of carrying out a hydrogen anneal to a substrate having an interface between different materials provided that an annealing temperature is maintained higher than a hydrogen-eliminating initiation temperature, wherein a temperature of a furnace is controlled to be not higher than the hydrogen-eliminating initiation temperature until the substrate is taken out from the furnace after the hydrogen anneal is carried out.

Abstract: A method includes the step of forming a silicon oxide film and a silicon nitride film having an opening for exposing a portion of a silicon substrate, etching the portion of the silicon substrate to form a device isolation trench, widening the opening only at the silicon nitride film, thermally oxidizing the inner surface of the device isolation trench to form a thermal oxide film, depositing another silicon oxide film for filling the opening and the device isolation trench, etching the top portion of the another silicon oxide film and then the silicon nitride film, and polishing the another silicon oxide film and the silicon oxide film to obtain flat surfaces of the another silicon oxide film, the thermal oxide film and the silicon substrate.

Abstract: A well region is formed in a semiconductor substrate, the surface of the semiconductor substrate is thermally oxidized to thereby form a device isolation insulating film, impurities are injected into the semiconductor substrate to form a guard ring immediately below the device isolation insulating film and then the RTA is conducted to rapidly heat the semiconductor substrate at a temperature higher than that for thermal oxidation. Thereafter, a MOS transistor and a capacitor are formed by, for example, injecting impurities into the semiconductor substrate and then hydrogen sintering as an interface trapped state lowering treatment is conducted. Since the crystal defects are repaired by the RTA without affecting the impurity profile and the interface trapped state is reduced by the interface trapped state lowering treatment, leak current on the device isolation insulating film is reduced.