Patents by Inventor Shuji Moriya

Shuji Moriya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10786837
    Abstract: According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: September 29, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yukimasa Saito, Toshiki Hinata, Kazuya Dobashi, Kyoko Ikeda, Shuji Moriya
  • Patent number: 10312101
    Abstract: A substrate processing method includes a fluorine-based gas supply step of supplying a fluorine-based gas into a processing chamber where a substrate having a silicon-based film is accommodated, a purge gas supply step of supplying a purge gas for discharging the supplied fluorine-based gas into the processing chamber. The substrate processing method further includes a nitrogen-based gas supply step of supplying a nitrogen-based gas into the processing chamber from which the fluorine-based gas has been discharged. In the substrate processing method, at least in the fluorine-based gas supply step and the purge gas supply step, a temperature of the substrate is maintained at 60° C. or less.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: June 4, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shuji Moriya, Masahiko Tomita
  • Publication number: 20180369881
    Abstract: According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).
    Type: Application
    Filed: October 20, 2016
    Publication date: December 27, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yukimasa SAITO, Toshiki HINATA, Kazuya DOBASHI, Kyoko IKEDA, Shuji MORIYA
  • Publication number: 20180355465
    Abstract: A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.
    Type: Application
    Filed: October 25, 2016
    Publication date: December 13, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yukimasa SAITO, Toshiki HINATA, Kazuya DOBASHI, Kyoko IKEDA, Shuji MORIYA
  • Publication number: 20170316947
    Abstract: A substrate processing method includes a fluorine-based gas supply step of supplying a fluorine-based gas into a processing chamber where a substrate having a silicon-based film is accommodated, a purge gas supply step of supplying a purge gas for discharging the supplied fluorine-based gas into the processing chamber. The substrate processing method further includes a nitrogen-based gas supply step of supplying a nitrogen-based gas into the processing chamber from which the fluorine-based gas has been discharged. In the substrate processing method, at least in the fluorine-based gas supply step and the purge gas supply step, a temperature of the substrate is maintained at 60° C. or less.
    Type: Application
    Filed: April 12, 2017
    Publication date: November 2, 2017
    Inventors: Shuji MORIYA, Masahiko TOMITA
  • Patent number: 9691630
    Abstract: An etching method includes loading a target substrate W into a chamber 40, the target substrate W having a silicon nitride film formed thereon and at least one of a polysilicon film and a silicon oxide film formed adjacent to the silicon nitride film; supplying a fluorine (F)-containing gas and an O2 gas into the chamber 40, while at least the O2 gas is excited; and selectively etching the silicon nitride film with respect to at least one of the polysilicon film and the silicon oxide film using the F-containing gas and the O2 gas.
    Type: Grant
    Filed: March 5, 2014
    Date of Patent: June 27, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Nobuhiro Takahashi, Tetsuro Takahashi, Shuji Moriya, Masashi Matsumoto, Junichiro Matsunaga
  • Patent number: 9435470
    Abstract: A pipe joint for preventing fine particles generated when a male threaded member and a female threaded member are threadedly engaged with each other from entering a fluid passage thus maintaining a high degree of cleanliness. Joint members are joined to each other by a male threaded member formed on one joint member and a female threaded member formed on the other joint member. A cover portion which covers outer peripheral surfaces of abutting portions of both joint members is formed on the male threaded member.
    Type: Grant
    Filed: September 11, 2012
    Date of Patent: September 6, 2016
    Assignee: FUJIKIN INCORPORATED
    Inventors: Tsuneyuki Okabe, Shuji Moriya, Kenichi Sato, Tomohiro Nakata, Tsutomu Shinohara, Michio Yamaji
  • Patent number: 9371946
    Abstract: A pipe joint includes first and second joint members having fluid channels communicating with each other, an annular gasket to be interposed between abutting end surfaces of the both joint members, and a nut configured to couple the joint members. The nut is provided with an inner surface treated layer. The inner surface treated layer includes a Co (cobalt)-P (phosphorous) alloy metal coating provided on an inner surface of the nut and a fluorine coating provided on the surface of the alloy metal coating.
    Type: Grant
    Filed: October 18, 2013
    Date of Patent: June 21, 2016
    Assignees: Tokyo Electron Limited, Fujikin Incorporated
    Inventors: Tsuneyuki Okabe, Shuji Moriya, Kenichi Sato, Tomohiro Nakata, Tsutomu Shinohara, Michio Yamaji
  • Publication number: 20160086814
    Abstract: An etching method includes loading a target substrate W into a chamber 40, the target substrate W having a silicon nitride film formed thereon and at least one of a polysilicon film and a silicon oxide film formed adjacent to the silicon nitride film; supplying a fluorine (F)-containing gas and an O2 gas into the chamber 40, while at least the O2 gas is excited; and selectively etching the silicon nitride film with respect to at least one of the polysilicon film and the silicon oxide film using the F-containing gas and the O2 gas.
    Type: Application
    Filed: March 5, 2014
    Publication date: March 24, 2016
    Inventors: Nobuhiro TAKAHASHI, Tetsuro TAKAHASHI, Shuji MORIYA, Masashi MATSUMOTO, Junichiro MATSUNAGA
  • Patent number: 9236272
    Abstract: An etching apparatus includes: a chamber configured to accommodate a substrate to be processed having an etching target film; a gas exhaust mechanism configured to exhaust an inside of the chamber; an etching gas supply mechanism configured to supply an etching gas into the chamber; and a gas cluster generation mechanism configured to generate a gas cluster in the chamber by spraying a cluster gas into the chamber, wherein a gas produced by a reaction when the etching target film is etched with the etching gas is discharged from the chamber by the gas cluster generated by the gas cluster generation mechanism.
    Type: Grant
    Filed: September 10, 2013
    Date of Patent: January 12, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Shuji Moriya
  • Patent number: 9150965
    Abstract: A processing apparatus includes a gas supply passage for supplying a corrosive gas having a halogen, a part of the passage being made of a metal; a stabilization reaction unit which has an energy generator for supplying light energy or heat energy to the corrosive gas that has passed through the metallic part of the gas supply passage and/or has an obstacle configured to apply a collision energy to the corrosive gas that has passed through the metallic part of the gas supply passage, the collision energy being generated from a collision between the obstacle and said corrosive gas. A reaction for stabilizing a compound containing the metal and the halogen contained in the corrosive gas takes place by means of at least one of the light energy, heat energy, and collision energy; and a trapping unit which traps the compound stabilized in the stabilization reaction unit.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: October 6, 2015
    Assignee: TOKYO ELECTRIC LIMITED
    Inventors: Shuji Moriya, Toyohiko Shindo, Noboru Tamura
  • Patent number: 9026011
    Abstract: An image forming apparatus includes a photosensitive member, a first developer carrying member for carrying a developer comprising toner and a carrier for developing an electrostatic image formed on the photosensitive member, and a second developer carrying member for carrying the developer received from the first developer carrying. The second developer carrying member is disposed downstream of the first developer carrying member with respect to a rotational direction of the photosensitive member. In addition, a voltage source applies a developing bias voltage to the first developer carrying member and second developer carrying member, and a driving device rotates the first developer carrying member at a peripheral speed higher than that of the photosensitive member and rotates the second developer carrying member at a peripheral speed which is higher than that of the photosensitive member and which is lower than that of the first developer carrying member.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: May 5, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kenta Kubo, Juun Horie, Shuji Moriya, Tomoaki Miyazawa, Hirokazu Usami, Tomohito Ishida, Manami Haraguchi, Takeshi Yamamoto
  • Patent number: 9012331
    Abstract: Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an F2 gas that are diluted with an inert gas into the chamber such that the FNO gas and the F2 gas are reacted with the portion of silicon existing on the surface of the substrate to be processed.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: April 21, 2015
    Assignees: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude, Tokyo Electron Limited
    Inventors: Shuji Moriya, Atsushi Ando, Jun Sonobe, Christopher Turpin
  • Publication number: 20140357085
    Abstract: Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an F2 gas that are diluted with an inert gas into the chamber such that the FNO gas and the F2 gas are reacted with the portion of silicon existing on the surface of the substrate to be processed.
    Type: Application
    Filed: May 29, 2014
    Publication date: December 4, 2014
    Applicants: TOKYO ELECTRON LIMITED, L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
    Inventors: Shuji MORIYA, Atsushi ANDO, Jun SONOBE, Christopher TURPIN
  • Patent number: 8893743
    Abstract: The flow rate controller controlling a flow rate of gas supplied through a gas passage includes: a main gas pipe; a flow rate detecting unit detecting the flow rate of gas supplied through the main gas pipe and outputting a flow rate signal; a flow rate control valve mechanism controlling a flow rate; a conversion data storage unit storing a plurality of pieces of conversion data corresponding to a plurality of gaseous species, to indicate a relationship between a flow rate instruction signal input from outside and a target flow rate; and a flow rate control main body which selects the corresponding conversion data from the conversion data based on a gaseous species selection signal input from outside, calculates the target flow rate based on the flow rate instruction signal, and controls the flow rate control valve mechanism based on the target flow rate and the flow rate signal.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: November 25, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Tsuneyuki Okabe, Shuji Moriya, Kazushige Matsuno
  • Publication number: 20140333067
    Abstract: Provided is a joint which can decrease the number of kinds of parts. A bolt 5 has a shaft portion 14 which is constituted of a distal end portion on which male threads 14a are formed and a remaining portion 14b on which male threads are not formed. First and second joint members 2, 3 have the same shape. A shaft insertion hole 15 which is disposed on an abutting end surface side of the joint member and a threaded hole 16 which is communicated with the shaft insertion hole 15 and extends to an end surface of the joint member on a side opposite to an abutting end surface of the joint member are formed in the first and second joint members 2, 3.
    Type: Application
    Filed: September 11, 2012
    Publication date: November 13, 2014
    Applicant: FUJIKIN INCORPORATED
    Inventors: Tsuneyuki Okabe, Shuji Moriya, Kenichi Sato, Tomohiro Nakata, Tsutomu Shinohara, Michio Yamaji
  • Publication number: 20140312617
    Abstract: Provided is a pipe joint which can prevent fine particles generated when a male threaded member and a female threaded member are threadedly engaged with each other from entering a fluid passage thus maintaining a high degree of cleanliness. Joint members 2, 3 are joined to each other by a male threaded member 6 formed on one joint member 2 and a female threaded member 7 formed on the other joint member 3. A cover portion 16 which covers outer peripheral surfaces of abutting portions of both joint members 2, 3 is formed on the male threaded member 6.
    Type: Application
    Filed: September 11, 2012
    Publication date: October 23, 2014
    Applicant: FUJIKIN INCORPORATED
    Inventors: Tsuneyuki Okabe, Shuji Moriya, Kenichi Sato, Tomohiro Nakata, Tsutomu Shinohara, Michio Yamaji
  • Publication number: 20140076849
    Abstract: An etching apparatus includes: a chamber configured to accommodate a substrate to be processed having an etching target film; a gas exhaust mechanism configured to exhaust an inside of the chamber; an etching gas supply mechanism configured to supply an etching gas into the chamber; and a gas cluster generation mechanism configured to generate a gas cluster in the chamber by spraying a cluster gas into the chamber, wherein a gas produced by a reaction when the etching target film is etched with the etching gas is discharged from the chamber by the gas cluster generated by the gas cluster generation mechanism.
    Type: Application
    Filed: September 10, 2013
    Publication date: March 20, 2014
    Applicant: Tokyo Electron Limited
    Inventor: Shuji MORIYA
  • Patent number: 8434522
    Abstract: There is provided a fluid control apparatus which can reduce the number of members and can improve the assembling operation efficiency. A pressure indication device 4 to be replaced with a relatively-higher frequency is coupled to a base block 5 existing thereunder through male screw members 17 from above. An on-off valve 6 to be replaced with a relatively-lower frequency has, at its lower portion, a block-shaped main body 6a formed integrally therewith. The main body 6a of the on-off valve 6 is coupled to the base block 5 through male screw members 18 in the forward and rearward directions.
    Type: Grant
    Filed: May 26, 2008
    Date of Patent: May 7, 2013
    Assignees: Tokyo Electron Limited, Fujikin Incorporated
    Inventors: Wataru Okase, Shuji Moriya, Tomohiro Nakata, Tsutomu Shinohara, Michio Yamaji
  • Patent number: 8381755
    Abstract: A pressure type flow rate control reference allows the performance of flow rate calibrations of a flow rate controller on all types of gases, including corrosive gases, at low costs, and also has excellent flow rate control accuracy. The pressure type flow rate control reference includes a pressure controller for adjusting the pressure of a calibration gas from a calibration gas supply source, a first volume provided on the downstream side of a pressure controller, a first connection mouth of an uncalibrated flow rate controller provided on the downstream side of the first volume, a reference pressure type flow rate controller connected to a second connection mouth on the downstream side of the uncalibrated flow rate controller, a second volume provided on the downstream side of a reference pressure type flow rate controller, and an evacuation device provided on the downstream side of the second volume.
    Type: Grant
    Filed: May 30, 2012
    Date of Patent: February 26, 2013
    Assignees: Fujikin Incorporated, Tokyo Electron Limited
    Inventors: Shuji Moriya, Wataru Okase, Tsutomu Shinohara, Nobukazu Ikeda, Michio Yamaji, Yasutaka Hayashi, Toshihide Yoshida, Yasuyuki Omata