Patents by Inventor Shuji Moriya
Shuji Moriya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11761075Abstract: A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.Type: GrantFiled: October 25, 2016Date of Patent: September 19, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Yukimasa Saito, Toshiki Hinata, Kazuya Dobashi, Kyoko Ikeda, Shuji Moriya
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Publication number: 20210313169Abstract: Provided are apparatuses for manufacturing semiconductor devices. An apparatus includes a reaction chamber having a stage to be loaded on a substrate, wherein set plasma is formed over the stage, a plurality of gas supply lines connected to the reaction chamber, flow controllers formed on the plurality of gas supply lines, respectively, to control the amount of a gas supplied to the reaction chamber, and a gas splitter configured to supply a mixed gas to the flow controllers. The apparatus may be a thin film deposition apparatus using plasma and further include a flow control unit connected to the gas splitter and a gas supply source connected to the flow control unit.Type: ApplicationFiled: March 22, 2021Publication date: October 7, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Hyunjae SONG, Kaoru YAMAMOTO, Changhyun KIM, Shuji MORIYA, Jungsoo YOON, Soyoung LEE, Changseok LEE
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Patent number: 10786837Abstract: According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).Type: GrantFiled: October 20, 2016Date of Patent: September 29, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Yukimasa Saito, Toshiki Hinata, Kazuya Dobashi, Kyoko Ikeda, Shuji Moriya
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Patent number: 10312101Abstract: A substrate processing method includes a fluorine-based gas supply step of supplying a fluorine-based gas into a processing chamber where a substrate having a silicon-based film is accommodated, a purge gas supply step of supplying a purge gas for discharging the supplied fluorine-based gas into the processing chamber. The substrate processing method further includes a nitrogen-based gas supply step of supplying a nitrogen-based gas into the processing chamber from which the fluorine-based gas has been discharged. In the substrate processing method, at least in the fluorine-based gas supply step and the purge gas supply step, a temperature of the substrate is maintained at 60° C. or less.Type: GrantFiled: April 12, 2017Date of Patent: June 4, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Shuji Moriya, Masahiko Tomita
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Publication number: 20180369881Abstract: According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).Type: ApplicationFiled: October 20, 2016Publication date: December 27, 2018Applicant: TOKYO ELECTRON LIMITEDInventors: Yukimasa SAITO, Toshiki HINATA, Kazuya DOBASHI, Kyoko IKEDA, Shuji MORIYA
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Publication number: 20180355465Abstract: A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.Type: ApplicationFiled: October 25, 2016Publication date: December 13, 2018Applicant: TOKYO ELECTRON LIMITEDInventors: Yukimasa SAITO, Toshiki HINATA, Kazuya DOBASHI, Kyoko IKEDA, Shuji MORIYA
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Publication number: 20170316947Abstract: A substrate processing method includes a fluorine-based gas supply step of supplying a fluorine-based gas into a processing chamber where a substrate having a silicon-based film is accommodated, a purge gas supply step of supplying a purge gas for discharging the supplied fluorine-based gas into the processing chamber. The substrate processing method further includes a nitrogen-based gas supply step of supplying a nitrogen-based gas into the processing chamber from which the fluorine-based gas has been discharged. In the substrate processing method, at least in the fluorine-based gas supply step and the purge gas supply step, a temperature of the substrate is maintained at 60° C. or less.Type: ApplicationFiled: April 12, 2017Publication date: November 2, 2017Inventors: Shuji MORIYA, Masahiko TOMITA
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Patent number: 9691630Abstract: An etching method includes loading a target substrate W into a chamber 40, the target substrate W having a silicon nitride film formed thereon and at least one of a polysilicon film and a silicon oxide film formed adjacent to the silicon nitride film; supplying a fluorine (F)-containing gas and an O2 gas into the chamber 40, while at least the O2 gas is excited; and selectively etching the silicon nitride film with respect to at least one of the polysilicon film and the silicon oxide film using the F-containing gas and the O2 gas.Type: GrantFiled: March 5, 2014Date of Patent: June 27, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Nobuhiro Takahashi, Tetsuro Takahashi, Shuji Moriya, Masashi Matsumoto, Junichiro Matsunaga
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Patent number: 9435470Abstract: A pipe joint for preventing fine particles generated when a male threaded member and a female threaded member are threadedly engaged with each other from entering a fluid passage thus maintaining a high degree of cleanliness. Joint members are joined to each other by a male threaded member formed on one joint member and a female threaded member formed on the other joint member. A cover portion which covers outer peripheral surfaces of abutting portions of both joint members is formed on the male threaded member.Type: GrantFiled: September 11, 2012Date of Patent: September 6, 2016Assignee: FUJIKIN INCORPORATEDInventors: Tsuneyuki Okabe, Shuji Moriya, Kenichi Sato, Tomohiro Nakata, Tsutomu Shinohara, Michio Yamaji
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Patent number: 9371946Abstract: A pipe joint includes first and second joint members having fluid channels communicating with each other, an annular gasket to be interposed between abutting end surfaces of the both joint members, and a nut configured to couple the joint members. The nut is provided with an inner surface treated layer. The inner surface treated layer includes a Co (cobalt)-P (phosphorous) alloy metal coating provided on an inner surface of the nut and a fluorine coating provided on the surface of the alloy metal coating.Type: GrantFiled: October 18, 2013Date of Patent: June 21, 2016Assignees: Tokyo Electron Limited, Fujikin IncorporatedInventors: Tsuneyuki Okabe, Shuji Moriya, Kenichi Sato, Tomohiro Nakata, Tsutomu Shinohara, Michio Yamaji
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Publication number: 20160086814Abstract: An etching method includes loading a target substrate W into a chamber 40, the target substrate W having a silicon nitride film formed thereon and at least one of a polysilicon film and a silicon oxide film formed adjacent to the silicon nitride film; supplying a fluorine (F)-containing gas and an O2 gas into the chamber 40, while at least the O2 gas is excited; and selectively etching the silicon nitride film with respect to at least one of the polysilicon film and the silicon oxide film using the F-containing gas and the O2 gas.Type: ApplicationFiled: March 5, 2014Publication date: March 24, 2016Inventors: Nobuhiro TAKAHASHI, Tetsuro TAKAHASHI, Shuji MORIYA, Masashi MATSUMOTO, Junichiro MATSUNAGA
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Patent number: 9236272Abstract: An etching apparatus includes: a chamber configured to accommodate a substrate to be processed having an etching target film; a gas exhaust mechanism configured to exhaust an inside of the chamber; an etching gas supply mechanism configured to supply an etching gas into the chamber; and a gas cluster generation mechanism configured to generate a gas cluster in the chamber by spraying a cluster gas into the chamber, wherein a gas produced by a reaction when the etching target film is etched with the etching gas is discharged from the chamber by the gas cluster generated by the gas cluster generation mechanism.Type: GrantFiled: September 10, 2013Date of Patent: January 12, 2016Assignee: TOKYO ELECTRON LIMITEDInventor: Shuji Moriya
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Patent number: 9150965Abstract: A processing apparatus includes a gas supply passage for supplying a corrosive gas having a halogen, a part of the passage being made of a metal; a stabilization reaction unit which has an energy generator for supplying light energy or heat energy to the corrosive gas that has passed through the metallic part of the gas supply passage and/or has an obstacle configured to apply a collision energy to the corrosive gas that has passed through the metallic part of the gas supply passage, the collision energy being generated from a collision between the obstacle and said corrosive gas. A reaction for stabilizing a compound containing the metal and the halogen contained in the corrosive gas takes place by means of at least one of the light energy, heat energy, and collision energy; and a trapping unit which traps the compound stabilized in the stabilization reaction unit.Type: GrantFiled: March 30, 2010Date of Patent: October 6, 2015Assignee: TOKYO ELECTRIC LIMITEDInventors: Shuji Moriya, Toyohiko Shindo, Noboru Tamura
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Patent number: 9026011Abstract: An image forming apparatus includes a photosensitive member, a first developer carrying member for carrying a developer comprising toner and a carrier for developing an electrostatic image formed on the photosensitive member, and a second developer carrying member for carrying the developer received from the first developer carrying. The second developer carrying member is disposed downstream of the first developer carrying member with respect to a rotational direction of the photosensitive member. In addition, a voltage source applies a developing bias voltage to the first developer carrying member and second developer carrying member, and a driving device rotates the first developer carrying member at a peripheral speed higher than that of the photosensitive member and rotates the second developer carrying member at a peripheral speed which is higher than that of the photosensitive member and which is lower than that of the first developer carrying member.Type: GrantFiled: February 26, 2013Date of Patent: May 5, 2015Assignee: Canon Kabushiki KaishaInventors: Kenta Kubo, Juun Horie, Shuji Moriya, Tomoaki Miyazawa, Hirokazu Usami, Tomohito Ishida, Manami Haraguchi, Takeshi Yamamoto
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Patent number: 9012331Abstract: Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an F2 gas that are diluted with an inert gas into the chamber such that the FNO gas and the F2 gas are reacted with the portion of silicon existing on the surface of the substrate to be processed.Type: GrantFiled: May 29, 2014Date of Patent: April 21, 2015Assignees: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude, Tokyo Electron LimitedInventors: Shuji Moriya, Atsushi Ando, Jun Sonobe, Christopher Turpin
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Publication number: 20140357085Abstract: Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an F2 gas that are diluted with an inert gas into the chamber such that the FNO gas and the F2 gas are reacted with the portion of silicon existing on the surface of the substrate to be processed.Type: ApplicationFiled: May 29, 2014Publication date: December 4, 2014Applicants: TOKYO ELECTRON LIMITED, L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDEInventors: Shuji MORIYA, Atsushi ANDO, Jun SONOBE, Christopher TURPIN
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Patent number: 8893743Abstract: The flow rate controller controlling a flow rate of gas supplied through a gas passage includes: a main gas pipe; a flow rate detecting unit detecting the flow rate of gas supplied through the main gas pipe and outputting a flow rate signal; a flow rate control valve mechanism controlling a flow rate; a conversion data storage unit storing a plurality of pieces of conversion data corresponding to a plurality of gaseous species, to indicate a relationship between a flow rate instruction signal input from outside and a target flow rate; and a flow rate control main body which selects the corresponding conversion data from the conversion data based on a gaseous species selection signal input from outside, calculates the target flow rate based on the flow rate instruction signal, and controls the flow rate control valve mechanism based on the target flow rate and the flow rate signal.Type: GrantFiled: October 12, 2012Date of Patent: November 25, 2014Assignee: Tokyo Electron LimitedInventors: Tsuneyuki Okabe, Shuji Moriya, Kazushige Matsuno
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Publication number: 20140333067Abstract: Provided is a joint which can decrease the number of kinds of parts. A bolt 5 has a shaft portion 14 which is constituted of a distal end portion on which male threads 14a are formed and a remaining portion 14b on which male threads are not formed. First and second joint members 2, 3 have the same shape. A shaft insertion hole 15 which is disposed on an abutting end surface side of the joint member and a threaded hole 16 which is communicated with the shaft insertion hole 15 and extends to an end surface of the joint member on a side opposite to an abutting end surface of the joint member are formed in the first and second joint members 2, 3.Type: ApplicationFiled: September 11, 2012Publication date: November 13, 2014Applicant: FUJIKIN INCORPORATEDInventors: Tsuneyuki Okabe, Shuji Moriya, Kenichi Sato, Tomohiro Nakata, Tsutomu Shinohara, Michio Yamaji
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Publication number: 20140312617Abstract: Provided is a pipe joint which can prevent fine particles generated when a male threaded member and a female threaded member are threadedly engaged with each other from entering a fluid passage thus maintaining a high degree of cleanliness. Joint members 2, 3 are joined to each other by a male threaded member 6 formed on one joint member 2 and a female threaded member 7 formed on the other joint member 3. A cover portion 16 which covers outer peripheral surfaces of abutting portions of both joint members 2, 3 is formed on the male threaded member 6.Type: ApplicationFiled: September 11, 2012Publication date: October 23, 2014Applicant: FUJIKIN INCORPORATEDInventors: Tsuneyuki Okabe, Shuji Moriya, Kenichi Sato, Tomohiro Nakata, Tsutomu Shinohara, Michio Yamaji
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Publication number: 20140076849Abstract: An etching apparatus includes: a chamber configured to accommodate a substrate to be processed having an etching target film; a gas exhaust mechanism configured to exhaust an inside of the chamber; an etching gas supply mechanism configured to supply an etching gas into the chamber; and a gas cluster generation mechanism configured to generate a gas cluster in the chamber by spraying a cluster gas into the chamber, wherein a gas produced by a reaction when the etching target film is etched with the etching gas is discharged from the chamber by the gas cluster generated by the gas cluster generation mechanism.Type: ApplicationFiled: September 10, 2013Publication date: March 20, 2014Applicant: Tokyo Electron LimitedInventor: Shuji MORIYA