Abstract: A gate turn-off (GTO) thyristor has a plurality of unit GTO thyristors of strip-like configuration in a same semiconductor substrate, each unit GTO thyristor being constructed of an N emitter layer, P base layer, N base layer and P emitter layer. The P base and N base layers are shared in common for all the unit GTO thyristors which are formed in a multi-ring configuration. The exposed area of the P emitter layer of a unit GTO thyristor located far from the gate signal input area is made smaller than that of the P emitter layer of a unit GTO thyristor located relatively close to the gate signal input area.

Abstract: A gate turn-off (GTO) thyristor has a plurality of unit GTO thyristors of strip-like configuration in a same semiconductor substrate, each unit GTO thyristor being constructed of an N emitter layer, P base layer, N base layer and P emitter layer. The P base and N base layers are shared in common for all the unit GTO thyristors which are formed in a multi-ring configuration. The exposed area of the P emitter layer of a unit GTO thyristor located far from the gate signal input area is made smaller than that of the P emitter layer of a unit GTO thyristor located relatively closer to the gate signal input area.

Abstract: A parallel connected gate turn-off thyristor device including an additional short circuiting conductor connected between the gate terminals of the respective gate turn-off thyristors so as to bypass a part of the turn-on and turn-off gate currents of one gate turn-off thyristor to other gate turn-off thyristors to increase the turn-on and turn-off gate currents of the other gate turn-off thyristors thereby hastening the turn-on and turn-off operations of the other gate turn-off thyristors.

Abstract: A control circuit for a semiconductor element with a control electrode includes a signal transmission circuit, in which two switching elements made conductive when a control signal is supplied from a control signal source to the switching elements through a signal insulating element, are provided so that the control signal is transferred to a turn-on circuit for the semiconductor element only when the switching elements are simultaneously made conductive.

Abstract: A gate circuit for gate turn-off thyristors is disclosed which includes a turn-on circuit formed of a series combination of a turn-on power source and an NPN transistor and a turn-off circuit formed of a series combination of a turn-off power source and a thyristor, and in which a PNP transistor is provided between the anode and gate of the thyristor in such a manner that the base of the NPN transistor and the base of the PNP transistor are connected to each other and a junction of these bases receives a control signal for turning on or off a gate turn-off thyristor.