Abstract: There is provided a solid-state imaging device including: a first semiconductor layer including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated; a pixel separation section that is provided in the first semiconductor layer, and partitions a plurality of the pixels from each other; a second semiconductor layer that is provided with a pixel transistor and is stacked on the first semiconductor layer, the pixel transistor that reads the signal electric charge of the electric charge accumulation section; and a first shared coupling section that is provided between the second semiconductor layer and the first semiconductor layer, and is provided to straddle the pixel separation section and is electrically coupled to a plurality of the electric charge accumulation sections.

Abstract: A ceramic circuit board includes: a ceramic board; and an internal conductor disposed in the ceramic board, in which the ceramic board contains glass, a willemite filler, and an alumina filler, and an average particle diameter of the willemite filler is larger than an average particle diameter of the alumina filler.

Abstract: A ceramic circuit board includes: a ceramic board; and an internal conductor disposed in the ceramic board, in which the ceramic board contains glass, a willemite filler, and an alumina filler, and an average particle diameter of the willemite filler is larger than an average particle diameter of the alumina filler.

Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.

Abstract: A photoelectric conversion device and a method for producing a photoelectric conversion device are disclosed. The photoelectric conversion device includes a light-absorbing layer. The light-absorbing layer contains a chalcopyrite-based compound, and has a peak intensity ratio IB/IA in a range of 3 to 9, where IA represents a peak intensity of the peak formed by combining a peak of a (220) plane and a peak of a (204) plane in X-ray diffraction, and IB represents a peak intensity of a (112) plane.

Abstract: A photoelectric converter is disclosed. The photoelectric converter includes a light-absorbing layer. The light-absorbing layer includes a plurality of crystalline grains. The grains contain a Group I-III-VI chalcopyrite compound semiconductor. The light-absorbing layer contains oxygen and an average atomic concentration of oxygen at grain boundaries of the light-absorbing layer is larger than the average atomic concentration of oxygen in the grains of the light-absorbing layer.

Abstract: The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.

Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.

Abstract: The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.

Abstract: A substrate for a magnetic read/write head is disclosed. The substrate can reduce detachment of crystal grains when the substrate is machined. The substrate may be machined when the substrate is cut into strips or a flow path surface recess is formed to produce the magnetic read/write head. The reduced detachment of crystal grains makes the magnetic read/write head more resilient to chipping, which allows the magnetic read/write head to have a lower and more stable flying height that increases recording density.

Abstract: A ceramic sintered body contains Al2O3 crystal grains, internal TiC crystal grains existing in the Al2O3 crystal grains and external TiC crystal grains other than the internal TiC crystal grains. The Al2O3 crystal grains and the external TiC crystal grains retain stress caused by the difference in thermal expansion coefficient remaining after sintering, so that the Al2O3 crystal grains and the external TiC crystal grains pull each other in the interface therebetween. As a result, when the ceramic sintered body is machined, micro-cracks generated in the interface can easily grow due to the residual stress in addition to the shearing force caused by the machining operation, so that machinability is improved.

Abstract: It is aimed to provide a photoelectric conversion device having high adhesion between a light-absorbing layer and an electrode layer as well as high photoelectric conversion efficiency. In order to achieve this object, the photoelectric conversion device includes a first layer and a second layer provided on the first layer. Further, in the photoelectric conversion device, the first layer includes an electrode layer, the second layer includes a light-absorbing layer including a group I-III-VI compound semiconductor, the light-absorbing layer includes a first region and a second region located farther from the first layer than the first region, and an average grain diameter of crystal grains in the second region is larger than an average grain diameter of crystal grains in the first region.

Abstract: A substrate for a magnetic read/write head is disclosed. The substrate can reduce detachment of crystal grains when unexpected vibrations or impacts are applied. The substrate may be machined when the substrate is cut into strips or a flow path surface recess is formed to produce the magnetic read/write head. The reduced detachment of crystal grains makes the magnetic read/write head more resilient to chipping, which allows the magnetic read/write head to have good performance in read/write.

Abstract: A substrate for a magnetic read/write head is disclosed. The substrate can reduce detachment of crystal grains when the substrate is machined. The substrate may be machined when the substrate is cut into strips or a flow path surface recess is formed to produce the magnetic read/write head. The reduced detachment of crystal grains makes the magnetic read/write head more resilient to chipping, which allows the magnetic read/write head to have a lower and more stable flying height that increases recording density.

Abstract: Greater emphasis has been placed on smoothness of the floating surface for the applications with floating height of 10 nm or less. To obtain a smooth floating surface, it must be polished with diamond abrasive having a mean particle size of 0.1 ?m or less, and conventional ceramic sintered body has poor machinability and it is impossible to use the magnetic heads made of this ceramic sintered body at a floating height of 10 nm or less. The ceramic sintered body according to the present invention contains Al2O3 crystal grains, internal TiC crystal grains existing in the Al2O3 crystal grains and external TiC crystal grains other than the internal TiC crystal grains. The Al2O3 crystal grains and the external TiC crystal grains retain stress caused by the difference in thermal expansion coefficient remaining after sintering, so that the Al2O3 crystal grains and the external TiC crystal grains pull each other in the interface therebetween.

Abstract: The present invention provides a dielectric ceramic composition comprising: 30 to 90% by weight of a crystallized glass powder capable of depositing a diopside crystal, 1 to 40% by weight of a calcium titanate powder, a strontium titanate powder or a mixed powder thereof, and 0 to 60% by weight of at least one kind of a powder selected from the group consisting of Al2O3, TiO2, ZrO2, MgTiO3, BaTi4O9, La2Ti2O7, Nd2Ti2O7, Ca2Nb2O7, SrZrO3 and CaZrO3, and a dielectric ceramics obtained by firing the same.

Abstract: The present invention provides a dielectric ceramic composition comprising: 30 to 90% by weight of a crystallized glass powder capable of depositing a diopside crystal, 1 to 40% by weight of a calcium titanate powder, a strontium titanate powder or a mixed powder thereof, and 0 to 60% by weight of at least one kind of a powder selected from the group consisting of Al2O3, TiO2, ZrO2, MgTiO3, BaTi4O9, La2Ti2O7, Nd2Ti2O7, Ca2Nb2O7, SrZrO3 and CaZrO3, and a dielectric ceramics obtained by firing the same.

Abstract: A circuit substrate in which the conductor portions constituting the functional devices formed in the insulating board have interfacial electric conductivities &sgr; of not larger than 2.90×107 &OHgr;−1·m−1 to greatly lower the insertion losses.

Abstract: A tubular container comprises a hollow body opened at one end and having in cross section a polygonal shape with sharp ridges being formed at corners, and a headpiece including a neck and a shoulder which includes an inclined portion having ridges and a polygonal configuration corresponding to the hollow body, the headpiece and the hollow body being integrally fused with each other with the ridges of the inclined portion being in agreement with the sharp ridges of the hollow body.