Abstract: An I/O pin is connected to a DUT via a transmission line. A driver generates a test signal to be supplied to the DUT. A driver-side switch and an output resistor are arranged in series between the driver and the I/O pin. A comparator is arranged such that the input terminal thereof is connected to the I/O pin, and configured to judge the level of a signal output from the DUT. A short-circuit switch is arranged between the I/O pin and the ground terminal.

Abstract: An I/O pin is connected to a DUT via a transmission line. A driver generates a test signal to be supplied to the DUT. A driver-side switch and an output resistor are arranged in series between the driver and the I/O pin. A comparator is arranged such that the input terminal thereof is connected to the I/O pin, and configured to judge the level of a signal output from the DUT. A short-circuit switch is arranged between the I/O pin and the ground terminal.

Abstract: An electronic device is provided. The electronic device includes: a circuit board having a surface on which a hollow is formed; an electronic component placed into the hollow; a pattern wiring which is formed on a bottom surface of the hollow and whose tip is provided at a position corresponding to a signal electrode of the electronic component; a signal wire connecting a tip of the pattern wiring and the signal electrode of the electronic component; two in-hollow ground patterns formed so as to sandwich the tip of the pattern wiring therebetween on the bottom surface of the hollow; and two or more ground wires that connect two ground electrodes provided on the electronic component so as to sandwich the signal electrode therebetween to the corresponding in-hollow ground patterns, respectively.

Abstract: Provided is a distributed amplification apparatus that outputs an output signal obtained by amplifying an input signal input thereto, comprising an input-side transmission line that transmits the input signal; an output-side transmission line that transmits the output signal; and a plurality of amplifiers that are provided in parallel between the input-side transmission line and the output-side transmission line, the amplifiers each amplifying the input signal transmitted on the input-side transmission line and supplying the amplified signal to the output-side transmission line. Each amplifier includes a transistor; a capacitor provided on a line that transmits the input signal to a gate terminal of the transistor; and a gate-ground resistance that is provided between the gate terminal of the transistor and a ground potential.

Abstract: Provided is a distributed amplification apparatus that outputs an output signal obtained by amplifying an input signal input thereto, comprising an input-side transmission line that transmits the input signal; an output-side transmission line that transmits the output signal; and a plurality of amplifiers that are provided in parallel between the input-side transmission line and the output-side transmission line, the amplifiers each amplifying the input signal transmitted on the input-side transmission line and supplying the amplified signal to the output-side transmission line. Each amplifier includes a transistor; a capacitor provided on a line that transmits the input signal to a gate terminal of the transistor; and a gate-ground resistance that is provided between the gate terminal of the transistor and a ground potential.

Abstract: An electronic device is provided. The electronic device includes: a circuit board having a surface on which a hollow is formed; an electronic component placed into the hollow; a pattern wiring which is formed on a bottom surface of the hollow and whose tip is provided at a position corresponding to a signal electrode of the electronic component; a signal wire connecting a tip of the pattern wiring and the signal electrode of the electronic component; two in-hollow ground patterns formed so as to sandwich the tip of the pattern wiring therebetween on the bottom surface of the hollow; and two or more ground wires that connect two ground electrodes provided on the electronic component so as to sandwich the signal electrode therebetween to the corresponding in-hollow ground patterns, respectively.

Abstract: A variable-tuned type YIG oscillator accompanied with substantially no mechanical variations in the resonance circuit and a method of manufacturing the same are provided. An amplifier element, electrode, circuit pattern and others of the oscillator circuit portion of a YIG oscillator are integrated on the front face of a semiconductor substrate by the monolithic microwave integrated circuit manufacturing technique. A coupling loop is formed as a thick film conductor shaped so as to surround at least a portion of the outer periphery of a YIG crystal ball on the semiconductor substrate having the amplifier element, electrode, circuit pattern and others formed thereon. A hole for positioning a YIG crystal ball at a predetermined position inside of the coupling loop is formed in the semiconductor substrate from the front surface of the substrate, and the YIG crystal ball is fitted and fixed in the hole.

Abstract: A variable-tuned type YIG oscillator accompanied with substantially no mechanical variations in the resonance circuit and a method of manufacturing the same are provided.

Abstract: A variable-tuned type YIG oscillator accompanied with substantially no mechanical variations in the resonance circuit and a method of manufacturing the same are provided. An amplifier element, electrode, circuit pattern and others of the oscillator circuit portion of a YIG oscillator are integrated on the front face of a semiconductor substrate by the monolithic microwave integrated circuit manufacturing technique. A coupling loop is formed as a thick film conductor shaped so as to surround at least a portion of the outer periphery of a YIG crystal ball on the semiconductor substrate having the amplifier element, electrode, circuit pattern and others formed thereon. A hole for positioning a YIG crystal ball at a predetermined position inside of the coupling loop is formed in the semiconductor substrate from the front surface of the substrate, and the YIG crystal ball is fitted and fixed in the hole.