Abstract: A sputtering apparatus including a target holder configured to hold at least two targets; a substrate holder configured to hold a substrate; a first shutter plate arranged between the target holder and the substrate holder, the first shutter plate having at least two holes and being capable of rotating around an axis; a second shutter plate arranged between the first shutter plate and the substrate holder, the second shutter plate having at least two holes and being capable of rotating around the axis; wherein the first and second shutter plates are rotated such that paths are simultaneously created between the at least two targets and the substrate through the at least two holes of the rotated first shutter plate and the at least two holes of the rotated second shutter plate, and a film is formed on the substrate by co-sputtering of the at least two targets.

Abstract: A sputtering apparatus including a target holder configured to hold at least two targets; a substrate holder configured to hold a substrate; a first shutter plate arranged between the target holder and the substrate holder, the first shutter plate having at least two holes and being capable of rotating around an axis; a second shutter plate arranged between the first shutter plate and the substrate holder, the second shutter plate having at least two holes and being capable of rotating around the axis; wherein the first and second shutter plates are rotated such that paths are simultaneously created between the at least two targets and the substrate through the at least two holes of the rotated first shutter plate and the at least two holes of the rotated second shutter plate, and a film is formed on the substrate by co-sputtering of the at least two targets.

Abstract: A double-layer shutter control method of a multi-sputtering system provided with three targets in a single chamber and a double-layer rotating shutter mechanism having shutter plates which independently rotate and have holes formed therein, comprising selecting a target by a combination of holes of a first shutter plate and a second shutter plate and uses the selected target for a pre-sputtering step and a main sputtering step with continuous discharge so as to deposit a film on a substrate, whereby it is possible to prevent cross-contamination between targets due to target substances etc. deposited on the shutter plates.

Abstract: The silicon nitride film forming method deposits a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system.

Abstract: A double-layer shutter control method of a multi-sputtering system provided with three targets in a single chamber and a double-layer rotating shutter mechanism having shutter plates which independently rotate and have holes formed therein, comprising selecting a target by a combination of holes of a first shutter plate and a second shutter plate and uses the selected target for a pre-sputtering step and a main sputtering step with continuous discharge so as to deposit a film on a substrate, whereby it is possible to prevent cross-contamination between targets due to target substances etc. deposited on the shutter plates.

Abstract: A silicon nitride film forming method makes possible the high reproducibility of film quality or film thickness. The silicon nitride film forming method deposits a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system.

Abstract: A double-layer shutter control method of a multi-sputtering system provided with three targets in a single chamber and a double-layer rotating shutter mechanism having shutter plates which independently rotate and have holes formed therein, comprising selecting a target by a combination of holes of a first shutter plate and a second shutter plate and uses the selected target for a pre-sputtering step and a main sputtering step with continuous discharge so as to deposit a film on a substrate, whereby it is possible to prevent cross-contamination between targets due to target substances etc. deposited on the shutter plates.

Abstract: This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV −1cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

Abstract: The invention provides a galvannealed steel sheet which has an oxide layer having 10 nm or larger thickness on the plateau of the coating layer flattened by temper rolling. With the use of the galvannealed steel sheet, no powdering occurs during press-forming, and stable and excellent sliding performance is attained. By selecting the area percentage of the plateau of the flattened coating layer to a range from 20 to 80%, making the coating layer single layer of &dgr;1 phase, and letting &zgr; phase exist in the &dgr;1 phase, further improved sliding performance and anti-powdering property are obtained.

Abstract: A magnetic multi-layer film manufacturing apparatus has a transferring chamber, a plurality of film-depositing chambers, and a robotic transferring device. Each film-depositing chamber has a rotatable substrate holder, a plurality of targets positioned at an incline on an opposing interior surface from the substrate holder, and a double layer rotating shutter mechanism and is controllable to deposit at least one layer of a magnetic multi-layer film structure. Magnetic multi-layer film structures are formed by depositing a plurality of magnetic films divided into a plurality of groups, each one of the plurality of groups deposited in an associated one of the plurality of film-depositing chambers continuously in a laminated state. A first division between successive groups of magnetic films is between a metal oxide film and a magnetic layer continuous therewith and a second division is between an antiferromagnetic layer and a magnetic layer continuous therewith.

Abstract: The present invention is to provide a silicon nitride film forming apparatus and a forming method which makes possible the high reproducibility of film quality or film thickness. The silicon nitride film forming apparatus and forming method in which a heating element and a substrate are arranged in a vacuum vessel connected to a gas exhaust system and a gas supply system to deposit a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system, comprises: an inner wall which is arranged in the vacuum vessel surrounding the heating element and the substrate so as to form a film formation space, a gas introduction means to introduce the raw material gas to the film forming space, and at least one of a heating means and a cooling means of the inner wall arranged to control the inner wall to a predetermined temperature.

Abstract: The invention provides a galvannealed steel sheet which has an oxide layer having 10 nm or larger thickness on the plateau of the coating layer flattened by temper rolling. With the use of the galvannealed steel sheet, no powdering occurs during press-forming, and stable and excellent sliding performance is attained. By selecting the area percentage of the plateau of the flattened coating layer to a range from 20 to 80%, making the coating layer single layer of &dgr;1 phase, and letting &zgr; phase exist in the &dgr;1 phase, further improved sliding performance and anti-powdering property are obtained.

Abstract: This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV −1cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

Abstract: A magnetic multi-layer film manufacturing apparatus has a transferring chamber, a plurality of film-depositing chambers, and a robotic transferring device. Each film-depositing chamber has a rotatable substrate holder, a plurality of targets positioned at an incline on an opposing interior surface from the substrate holder, and a double layer rotating shutter mechanism and is controllable to deposit at least one layer of a magnetic multi-layer film structure. Magnetic multi-layer film structures are formed by depositing a plurality of magnetic films divided into a plurality of groups, each one of the plurality of groups deposited in an associated one of the plurality of film-depositing chambers continuously in a laminated state. A first division between successive groups of magnetic films is between a metal oxide film and a magnetic layer continuous therewith and a second division is between an antiferromagnetic layer and a magnetic layer continuous therewith.

Abstract: This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV−1 cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

Abstract: This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 10.sup.12 eV .sup.-1 cm.sup.-2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

Abstract: A method and resulting structure for fabricating interconnects through an integrated circuit. The method includes adding more power lines 80, 100, 151 and/or increasing the width of power lines 120 and/or adding a power bus 140 near regions of high current flow. The resulting structure also provides more metallization near regions of high current flow. Similar to the method, the resulting structure may include additional power lines 80, 100, 151 and/or wider power lines 120 and/or a power bus 140 to increase the amount of metallization. An improved routing technique is also provided. Such routing technique includes providing an initial Ucs value and then adding additional lines near high current regions to decrease the Ucs value.

Abstract: A method for manufacturing a zinciferous plated steel sheet, comprises: forming a zinciferous plating layer on a steel sheet; and forming an Fe--Ni--O film on the zinciferous plating layer. The Fe--Ni--O film is formed by carrying out electrolysis with the steel sheet as a cathode in an aqueous solution, dipping the steel sheet in an aqueous solution, or spraying a mist on a surface of the zinciferous plating layer.

Abstract: A method and resulting structure for fabricating interconnects through an integrated circuit. The method includes adding more power lines 80, 100, 151 and/or increasing the width of power lines 120 and/or adding a power bus 140 near regions of high current flow. The resulting structure also provides more metallization near regions of high current flow. Similar to the method, the resulting structure may include additional power lines 80, 100, 151 and/or wider power lines 120 and/or a power bus 140 to increase the amount of metallization. An improved routing technique is also provided. Such routing technique includes providing an initial Ucs value and then adding additional lines near high current regions to decrease the Ucs value.