Abstract: A thermal assisted magnetic recording head that performs magnetic recording while locally heating a magnetic recording medium includes: a plasmon generator that generates a surface plasmon and that generates near-field light from the surface plasmon on a front end surface positioned on an air bearing surface opposing the magnetic recording medium; a dielectric body layer positioned around the plasmon generator; and an adhesion layer positioned between the plasmon generator and the dielectric body layer. The adhesion layer is made from at least one of IrOx, RuOx, NiOx and CoOx.

Abstract: A thermal assisted magnetic recording head that performs magnetic recording while locally heating a magnetic recording medium includes: a plasmon generator that generates a surface plasmon and that generates near-field light from the surface plasmon on a front end surface positioned on an air bearing surface opposing the magnetic recording medium; a dielectric body layer positioned around the plasmon generator; and an adhesion layer positioned between the plasmon generator and the dielectric body layer. The adhesion layer is made from at least one of IrOx, RuOx, NiOx and CoOx.

Abstract: A plasmon generator generates a surface plasmon, and generates a near-field light from the surface plasmon on a front end surface positioned on an air bearing surface opposing to a magnetic recording medium. The plasmon generator has a first surface that is adjacent to the front end surface and that faces a lower layer where the plasmon generator is deposited, and a second surface at the back side of the first surface relative to a down track direction. The first surface tilts toward a surface that is orthogonal to the down track direction, and, is parallel to across track direction, and the plasmon generator is deposited with a (111) orientation from the first surface toward the second surface.

Abstract: A magnetoresistive device includes an MR element including a metal layer, and an insulating portion made of magnesium oxide and in contact with the MR element. A method of manufacturing the magnetoresistive device includes the step of removing an unwanted magnesium oxide film that is formed by the magnesium oxide in the process of forming the insulating portion. In this step, the unwanted magnesium oxide film is wet etched by using an etchant containing an aqueous ammonia solution.

Abstract: A thin film magnetic head includes a spin valve film that includes a magnetization free layer, a magnetization pinned layer and a non-magnetic spacer layer that is disposed between the magnetization free and pinned layers, and a pair of side layers that are disposed at both sides of the spin valve film in a track width direction and at least in the vicinity of the magnetization free layer and the magnetization pinned layer. Each of the side layers has a bias magnetic field application layer that includes a soft magnetic layer and applies a bias magnetic field in the track width direction to the magnetization free layer, and a gap layer that is positioned between the spin valve film and the bias magnetic field application layer, and the side layers have compression stresses at least in the vicinity of the magnetization pinned layer.

Abstract: A magnetoresistive device includes an MR element including a metal layer, and an insulating portion made of magnesium oxide and in contact with the MR element. A method of manufacturing the magnetoresistive device includes the step of removing an unwanted magnesium oxide film that is formed by the magnesium oxide in the process of forming the insulating portion. In this step, the unwanted magnesium oxide film is wet etched by using an etchant containing an aqueous ammonia solution.

Abstract: A trailing shield is provided on a trailing side of a magnetic pole with a non-magnetic gap layer in between, and an intermediate layer having negative uniaxial magnetocrystalline anisotropy is provided between the non-magnetic gap layer and the trailing shield. The intermediate layer has a magnetic property in which an easy axis of magnetization is provided in an in-plane direction and thus magnetization is likely to occur in that direction, whereas a difficult axis of magnetization is provided in a direction intersecting the in-plane direction and thus magnetization is less likely to occur in that direction. Accordingly, magnetic flux becomes difficult to excessively flow from the magnetic pole into the trailing shield.

Abstract: A trailing shield is provided on a trailing side of a magnetic pole with a non-magnetic gap layer in between, and an intermediate layer having negative uniaxial magnetocrystalline anisotropy is provided between the non-magnetic gap layer and the trailing shield. The intermediate layer has a magnetic property in which an easy axis of magnetization is provided in an in-plane direction and thus magnetization is likely to occur in that direction, whereas a difficult axis of magnetization is provided in a direction intersecting the in-plane direction and thus magnetization is less likely to occur in that direction. Accordingly, magnetic flux becomes difficult to excessively flow from the magnetic pole into the trailing shield.