Abstract: Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.

Abstract: Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.

Abstract: Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.

Abstract: Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.

Abstract: Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.

Abstract: A temperature compensating crystal oscillation device includes a constant voltage circuit (12) for outputting a predetermined voltage independent of the ambient temperature, a temperature sensor circuit (13) for outputting a voltage in proportion to the ambient temperature, and a control circuit (14) for receiving the constant voltage output from the constant voltage circuit (12) and the voltage output in proportion to the temperature from the temperature sensor circuit (13) and for generating a control voltage (Vc) used for compensating a temperature characteristic of a quartz oscillator in the entire range of the ambient temperature through polygonal lines approximation of a negative cubic curve by using continuous lines.

Abstract: Dispersion of a load may be kept within a predetermined allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane against a wafer by applying a pressure load to a plurality of places on a plane of the pressure members on the side opposite the wafer in a probe test step, burn-in test step which represent typical semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit at the same time.

Abstract: In order to realize highly accurate temperature compensation of a crystal oscillation frequency, a current in proportion to the cube of a difference between an ambient temperature T.sub.a and a reference temperature T.sub.0 is generated. For this purpose, provided are a first series circuit of two diodes; a second series circuit of three diodes; a third series circuit of two diodes; a fourth series circuit of three diodes; a current source for allowing a constant current to flow into the first series circuit; a current source for allowing a constant current to flow from the third series circuit; a current source for allowing a current in proportion to T.sub.a -T.sub.0 to flow into the second series circuit when T.sub.a .gtoreq.T.sub.0 and allowing a current in proportion to .vertline.T.sub.a -T.sub.0 .vertline. to flow from the fourth series circuit when T.sub.a <T.sub.