Abstract: A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.

Abstract: A method for manufacturing a semiconductor element includes providing a semiconductor layer on a carbide substrate, the carbide substrate having a semiconductor layer contact surface connected to the semiconductor layer and a reflective layer contact surface opposite to the semiconductor layer contact surface. A reflective layer is provided on the reflective layer contact surface of the carbide substrate. The reflective layer contains silver and at least one of oxide particles and nitride particles.

Abstract: A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.

Abstract: A method for manufacturing a semiconductor element includes providing a semiconductor layer on a carbide substrate, the carbide substrate having a semiconductor layer contact surface connected to the semiconductor layer and a reflective layer contact surface opposite to the semiconductor layer contact surface. A reflective layer is provided on the reflective layer contact surface of the carbide substrate. The reflective layer contains silver and at least one of oxide particles and nitride particles.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: A semiconductor element includes a semiconductor layer, a carbide substrate, and a reflective layer. The carbide substrate is provided on the semiconductor layer. The reflective layer is provided on the carbide substrate such that the carbide substrate is sandwiched between the semiconductor layer and the reflective layer. The reflective layer includes silver and at least one of oxide particles and nitride particles.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: A light-emitting device includes a light-emitting element and a light-transmissive member containing a phosphor, particles, and a matrix, the phosphor and the particles being dispersed in the matrix, the particles including at least one of surface-treated particles, particles coexisting with a dispersing agent, and surface-treated particles coexisting with a dispersing agent, the particles being dispersed as aggregates, the particles having an average particle diameter in a range of 1 nm to 8 nm, a content of the particles falling within a range of 0.01 parts by mass to less than 5 parts by mass relative to 100 parts by mass of the matrix, a content of the phosphor falling within a range of 100 parts by mass to 300 parts by mass relative to 100 parts by mass of the matrix.

Abstract: A semiconductor device includes a base and a semiconductor element disposed on the base. The base includes: a base member, a reflective film located above the base member, the reflective film containing silver as a major component and containing particles formed of at least one material selected from the group consisting of an oxide, a nitride, and a carbide; and a dielectric multilayered film located above the reflective film.

Abstract: A light-emitting device includes a light-emitting element and a light-transmissive member containing a phosphor, particles, and a matrix, the phosphor and the particles being dispersed in the matrix, the particles including at least one of surface-treated particles, particles coexisting with a dispersing agent, and surface-treated particles coexisting with a dispersing agent, the particles being dispersed as aggregates, the particles having an average particle diameter in a range of 1 nm to 8 nm, a content of the particles falling within a range of 0.01 parts by mass to less than 5 parts by mass relative to 100 parts by mass of the matrix, a content of the phosphor falling within a range of 100 parts by mass to 300 parts by mass relative to 100 parts by mass of the matrix.

Abstract: A light emitting element includes a semiconductor stacked body, an oxide film, and a reflecting film. The semiconductor stacked body has a body surface. The oxide film has an upper surface and a bottom surface opposite to the upper surface. The oxide film is provided on the semiconductor stacked body such that the bottom surface of the oxide film is opposite to the body surface of the semiconductor stacked body. The reflecting film is provided on the oxide film to be in contact with the upper surface of the oxide film and includes silver and oxide nanoparticles.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: A semiconductor element includes a semiconductor layer, a carbide substrate, and a reflective layer. The carbide substrate is provided on the semiconductor layer. The reflective layer is provided on the carbide substrate such that the carbide substrate is sandwiched between the semiconductor layer and the reflective layer. The reflective layer includes silver and at least one of oxide particles and nitride particles.

Abstract: A semiconductor device includes a base and a semiconductor element disposed on the base. The base includes: a base member, a reflective film located above the base member, the reflective film containing silver as a major component and containing particles formed of at least one material selected from the group consisting of an oxide, a nitride, and a carbide; and a dielectric multilayered film located above the reflective film.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.

Abstract: To provide a semiconductor element that can have the high adhesion between a substrate made of an oxide or the like and a metal film, a semiconductor element includes a substrate made of an oxide, a semiconductor element structure provided on an upper surface of the substrate, and a metal film provided on a lower surface of the substrate, in which the metal film contains nanoparticles made of an oxide.