Abstract: The invention provides a high voltage MOS transistor having a high gate breakdown voltage and a high source/drain breakdown voltage and having a low on-resistance. A gate electrode is formed on an epitaxial silicon layer with a LOCOS film being interposed therebetween. A P-type first drift layer is formed on the left side of the LOCOS film, and a P+-type source layer is disposed on the surface of the epitaxial silicon layer on the right side of the LOCOS film, being opposed to the first drift layer over the gate electrode. A P-type second drift layer is formed by being diffused in the epitaxial silicon layer deeper than the first drift layer, extending from under the first drift layer to under the left side of the LOCOS film. A recess is formed in a bottom portion of the second drift layer under the left end of the LOCOS film.

Abstract: This invention is directed to offer a MOS transistor that has a high source-drain breakdown BVds, a low on resistance and a high electric current driving capacity. On resistance is lowered by forming an N well layer for lowering on resistance in the drift region. The N well layer is disposed beneath the gate electrode and away from the N well layer with a certain space between them. This space ensures the withstand voltage at the edge of the gate electrode of the drain layer side. Also, the N well layer is formed on the surface of an epitaxial layer in the region that includes a P+L layer. The edge of the N well layer of the drain layer side is located near the edge of the P+L layer of the drain layer side and away from the N well layer. This space makes the expansion of depletion layer from the P+L layer easier, further improving the withstand voltage.

Abstract: A charging device includes a charging roller and a cleaning roller configured to make contact with the charging roller. The cleaning roller is rotated following the charging roller. A dynamic friction coefficient of a surface of the charging roller measured by an oiler belt method is equal to or larger than 0.5.

Abstract: An electrophotographic photoreceptor includes, a cylindrical photoreceptor pipe; at least one flange which is attached to an opening of one end of the photoreceptor pipe, and which is provided with a shaft part projecting outward from the one end at a shaft center position of the photoreceptor pipe; and an earth member which is arranged to penetrate through the shaft part of the at least one flange, and which is provided on its inward side with at least one first contact part which contacts an inner circumference of the photoreceptor pipe, and on its outward side with a second contact part.

Abstract: The present invention is to provide a thin miniaturized reactor for chemical reaction with effective use of heat. The reactor has paired channels formed on a substrate such that the channels extend close to and along each other and are provided with a heat exchanger for efficient heat exchange between the channels. The reactor is produced by forming on substrates the paired channels and heat exchanger and then bonding the substrates together. This manufacturing method is simple and reduces steps.

Abstract: This invention is directed to offer a MOS transistor that has a high source-drain breakdown BVds, a low on resistance and a high electric current driving capacity. On resistance is lowered by forming an N well layer for lowering on resistance in the drift region. The N well layer is disposed beneath the gate electrode and away from the N well layer with a certain space between them. This space ensures the withstand voltage at the edge of the gate electrode of the drain layer side. Also, the N well layer is formed on the surface of an epitaxial layer in the region that includes a P+L layer. The edge of the N well layer of the drain layer side is located near the edge of the P+L layer of the drain layer side and away from the N well layer. This space makes the expansion of depletion layer from the P+L layer easier, further improving the withstand voltage.

Abstract: It is desirable to reduce chip area, lower on resistance and improve electric current driving capacity of a DMOS transistor in a semiconductor device with a DMOS transistor. On the surface of an N type epitaxial layer, a P+W layer of the opposite conductivity type (P type) is disposed and a DMOS transistor is formed in the P+W layer. The epitaxial layer and a drain region are insulated by the P+W layer. Therefore, it is possible to form both the DMOS transistor and other device element in a single confined region surrounded by an isolation layer. An N type FN layer is disposed on the surface region of the P+W layer beneath the gate electrode. An N+D layer, which is adjacent to the edge of the gate electrode of the drain layer side, is also formed. P type impurity layers (a P+D layer and a FP layer), which are located below the drain layer, are disposed beneath the contact region of the drain layer.

Abstract: A process cartridge including an image bearing member; a lubricant applicator, which includes a lubricant application member configured to apply a solid lubricant to the surface of the image bearing member; and a smoothing member configured to smooth the applied solid lubricant, and at least one of a charging device, a developing device and a cleaning device, wherein the amount of the solid lubricant present on a portion of surface of the image bearing member, which is located between the lubricant application member and the smoothing blade, is from 0.11 to 1.2 mg/m2. The smoothing member is preferably a blade having a JIS-A hardness of not less than 79°. The process cartridge is preferably assembled by a method including setting the lubricant smoothing member, the lubricant and the lubricant application member to a housing of the process cartridge; and then setting the image bearing member to the housing.

Abstract: A waste toner storage unit detachably mountable to an image forming apparatus includes a waste toner container and an inner cover integrally attached to the waste toner container. The waste toner container stores waste toner recovered after an image forming process. The inner cover is located at a region of the waste toner storage unit that does not store waste toner.

Abstract: In an image forming device comprising an image forming part forming an image on a recording sheet, a sheet ejection part provided above the image forming part and stacking the recording sheet on which the image is formed by the image forming part, and an image reading part provided above the sheet ejection part and reading an image of an original document, the sheet ejection part is provided with a cover which is capable of being opened or closed to the sheet ejection part.

Abstract: A method for fabricating a micromachine component of resin comprising step (a) of forming a sacrifice layer on a substrate, step (b) of forming at least two photosensitive resin composition layers sequentially on the sacrifice layer, and performing photolithography of each photosensitive resin composition layer to form an air gap portion defining the circumferential edge potion of the micromachine component and an air gap portion where an internal structure of the micromachine component is constituted to form a multilayer structure, step (c) for depositing dry film resist on the multilayer structure of the cured photosensitive resin composition layer, and performing photolithography of the dry film resist layer to form a cured dry film resist layer in which an air gap portion defining the circumferential edge of a shroud layer and an air gap where the structure of the shroud layer is constituted are formed, and step (d) for separating the micromachine component having the multilayer structure of the cured pho

Abstract: A charging device including a charging member configured to charge an image bearing member while the charging member is contacted with or is located so as to be close to the image bearing member when the charging device is set in an image forming apparatus; and a cleaning member configured to clean a surface of the charging member while contacting the surface of the charging member, wherein the pressure A at which the cleaning member is contacted with the charging member when the charging device is set in the image forming apparatus is greater than the pressure B at which the cleaning member is contacted with the charging member before the charging device is set in the image forming apparatus.

Abstract: An image forming apparatus includes an image carrier configured to form a latent image and a development unit including a development member configured to develop the latent image forming on the image carrier with a developer, and a plurality of conveying members each including at least one spiral vane and configured to rotate around a spiral axis of the spiral vane to revolve and transfer the developer around the spiral axis in a direction along the spiral axis, the plurality of conveying members configured to transfer the developer sequentially from a conveying member to an adjacent conveying member and including a first conveying member arranged at a position closest to the development member to supply developer to the development member, wherein a number of the spiral vanes of the first conveying member are at least two and is also greater than the number of spiral vanes in the remaining conveying members.

Abstract: An ultrafine crystal layer forming process of forming an ultrafine crystal layer in a workpiece constituted by a metallic material. The process includes: performing a machining operation on a surface of the workpiece using a machining tool, so as to impart a large local strain to the machined surface of the workpiece, where the machining operation using the machining tool causes the machined surface of the workpiece to be subjected to a plastic working that causes to have large local strain in the form of a true strain of at least 1, such that the ultrafine crystal layer is formed in a surface layer portion of the workpiece that defines the machined surface of the workpiece. Also disclosed are a nanocrystal layer forming process, a machine component having the ultrafine crystal layer or the nanocrystal layer, and a machine component producing process of producing the machine component.

Abstract: To provide a unit that can increase positioning precision of a blade member to a rotating member, an image forming apparatus, and a method of manufacturing a unit frame. A first reference surface of a boss provided on a surface of a frame to which a blade is contacted is formed by a first mold that forms a positioning hole for positioning a rotating member The first reference surface supports the blade member to prevent the blade member from moving to a weight direction. With this arrangement, there is no manufacturing error of the first reference surface due to a mold assembling error. As a result, precision of positioning the blade member to the rotating member can be increased.

Abstract: A used toner conveyance device includes a lateral conveyance member for conveying used toner substantially in the horizontal direction, and a vertical conveyance member for upwardly conveying the used toner transferred from the lateral conveyance member. The vertical conveyance member transfers the used toner to either a collection space or a next conveyance path. The vertical conveyance member stops its operation when a prescribed delay time has elapsed after the lateral conveyance member stops conveyance operation.

Abstract: There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes P-type first and second anode diffusion layers formed in an N-type epitaxial layer, N-type cathode diffusion layers formed in the epitaxial layer, a P-type third anode diffusion layer formed in the epitaxial layer so as to surround the first and second anode diffusion layers and to extend toward the cathode diffusion layers, and a Schottky barrier metal layer formed on the first and second anode diffusion layers.

Abstract: There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes a P-type first anode diffusion layer formed in an N-type epitaxial layer, a second anode diffusion layer which is formed so as to surround the first anode diffusion layer, and which has an impurity concentration lower than that of the first anode diffusion layer, N-type cathode diffusion layers formed in the epitaxial layer, and a Schottky barrier metal layer formed on the first and second anode diffusion layers.

Abstract: A powder transport unit for transporting powders includes a transport pipe, a powder transport member, and a regulating member. The transport pipe is curvingly extended. The powder transport member is disposed in an entire length of the transport pipe and rotates in the transport pipe to transport the powders. The regulating member is integrally formed with the transport pipe at a downstream end of the transport pipe, and regulates a length of the powder transport member disposed in the entire length of the transport pipe. The regulating member includes an exit hole to pass through the powders transported by the powder transport member in the transport pipe.

Abstract: An image forming apparatus includes a developer that develops a latent image to form an image, a separation unit that separates image information of a job image by color upon writing a latent image of the job image, a comparison unit that compares the image information by color separated by the separation unit with a threshold value previously set with respect to an image concentration, and a driving condition determination unit that determines a driving condition of the developer using a result of comparison by the comparison unit.