Abstract: A substrate processing apparatus includes a substrate holder for holding a plurality of wafers and being loaded therewith into a process tube through an opening in the process tube, in which a plurality of the wafers are processed, a wafer transfer system for charging a plurality of the wafers to the substrate holder, a boat waiting chamber installed on a line passing through the opening in the process tube and substantially hermetically accommodating the substrate holder before and after the substrate holder is loaded into and unloaded from the process tube and a wafer transfer chamber for substantially hermetically accommodating the wafer transfer system. An oxygen concentration of the boat waiting chamber is different from that of the wafer transfer chamber.

Abstract: A substrate processing apparatus comprises a substrate transfer chamber; a substrate processing chamber disposed on a first side wall of the substrate transfer chamber; an intermediate substrate holding chamber disposed on a second side wall of the substrate transfer chamber; a first substrate holder disposed within the intermediate substrate holding chamber; a second substrate holder disposed within the substrate processing chamber; a first substrate transfer robot, disposed within the substrate transfer chamber, for transferring the substrate between the substrate processing chamber and the intermediate substrate holding chamber; a first gate valve disposed between the substrate processing chamber and the substrate transfer chamber; a second gate valve disposed between the substrate transfer chamber and the intermediate substrate holding chamber; an atmospheric pressure section located opposite to the substrate transfer chamber with respect to the intermediate substrate holding chamber; a third valve dispos

Abstract: A substrate processing apparatus comprises a substrate transfer chamber; a substrate processing chamber disposed on a first side wall of the substrate transfer chamber; an intermediate substrate holding chamber disposed on a second side wall of the substrate transfer chamber; a first substrate holder disposed within the intermediate substrate holding chamber; a second substrate holder disposed within the substrate processing chamber; a first substrate transfer robot, disposed within the substrate transfer chamber, for transferring the substrate between the substrate processing chamber and the intermediate substrate holding chamber; a first gate valve disposed between the substrate processing chamber and the substrate transfer chamber; a second gate valve disposed between the substrate transfer chamber and the intermediate substrate holding chamber; an atmospheric pressure section located opposite to the substrate transfer chamber with respect to the intermediate substrate holding chamber; a third valve dispos

Abstract: A substrate processing apparatus comprises a substrate transfer chamber; a plurality of substrate processing chambers disposed on a first side wall of the substrate transfer chamber and stacked in the vertical direction; a plurality of first gate valves, each being disposed between each of the substrate processing chambers and the substrate transfer chamber; a substrate accommodating chamber disposed on a second side wall of the substrate transfer chamber; a substrate transfer device, disposed within the substrate transfer chamber, for transferring the substrate under reduced pressure between the substrate processing chambers and the substrate accommodating chamber; an elevator disposed outside the substrate transfer chamber and comprising a stationary portion and an elevating portion which is vertically movable with respect to the stationary portion; a rigid connecting member capable of moving through a through-hole formed in a predetermined face of the substrate transfer chamber, the rigid connecting member

Abstract: A thermal treatment furnace for use with a semiconductor system is provided. The thermal treatment furnace includes a scavenger which sealingly encloses a lower end of a reaction tube so as to diminish gas leakage from the reaction tube.