Abstract: The technology of this disclosure relates to a chip packaging apparatus. The chip packaging apparatus includes a first differential pin pair, a first pin, and a second pin. The first differential pin pair includes a first differential signal pin and a second differential signal pin. In addition, the first pin and the second pin are both located between the first differential signal pin and the second differential signal pin, and the first pin and the second pin are differential signal pins (or both are power pins). The first pin is adjacent to the first differential signal pin and the second differential signal pin. The second pin is adjacent to the first differential signal pin and the second differential signal pin. The first pin and the second pin are respectively located on two sides of a first imaginary straight line connecting the first differential signal pin to the second differential signal pin.

Abstract: A chip package structure, including a substrate, multiple chips and multiple discrete devices that are packaged on an upper surface of the substrate, and a heat dissipation apparatus, where the heat dissipation apparatus includes an insulation layer and a thermally conductive layer that are laminated. The insulation layer completely encloses and adheres to outer surfaces of the multiple chips, outer surfaces of the multiple discrete devices, and the upper surface of the substrate and configured to conduct heat generated by the multiple chips and the multiple discrete devices to the thermally conductive layer and the substrate such that the heat generated by the multiple chips and the multiple discrete devices dissipated using the thermally conductive layer and the substrate.

Abstract: An apparatus includes a circuit device, a heat sink fin, and a thermal interface material layer. The thermal interface material layer is thermally coupled to the circuit device and the heat sink fin. The thermal interface material layer includes a first alloy layer, a nanometal particle layer, and a second alloy layer. The first alloy layer is thermally coupled to the circuit device. The nanometal particle layer is thermally coupled to the first alloy layer. The nanometal particle layer includes nanometal particles and an intermediate mixture.

Abstract: This application provides a chip package structure. The chip package structure includes: a substrate and a chip, and further includes: a heat dissipation ring fastened onto the substrate and a planar heat pipe radiator covering the heat dissipation ring. The substrate, the heat dissipation ring, and the planar heat pipe radiator form a space to enclose the chip. A first metal thin film is disposed on a surface, facing the chip, of the planar heat pipe radiator, and the chip is thermally coupled to the first metal thin film by using a sintered metal layer.

Abstract: The present invention provide an IC die, including an underlay; an active component; an interconnection layer, covering the active component, where the interconnection layer includes multiple metal layers and multiple dielectric layers, the multiple metal layers and the multiple dielectric layers are alternately arranged, a metal layer whose distance to the active component is the farthest in the multiple metal layers includes metal cabling and a metal welding pad; and a heat dissipation layer, where the heat dissipation layer covers a region above the interconnection layer except a position corresponding to the metal welding pad, the heat dissipation layer is located under a package layer, the package layer includes a plastic packaging material, and the heat dissipation layer includes an electrical-insulating material whose heat conductivity is greater than a preset value.

Abstract: This application provides a chip packaging system, including multiple chips, a substrate, a heat dissipating component, and at least one thermoelectric refrigeration chip. A heat dissipating ring and a heat dissipating lid are provided on the heat dissipating component. One end of the heat dissipating ring is secured to the substrate, and the other end, opposite to the end secured to the substrate. The multiple chips are disposed in space enclosed by the substrate, the heat dissipating ring, and the heat dissipating lid, and all of the multiple chips are separated each other by using a thermal insulation material or by air. One surface of each of the at least one thermoelectric refrigeration chip is a hot end and the other surface thereof is a cold end. The cold end of each thermoelectric refrigeration chip is disposed on a side close to the multiple chips.

Abstract: A chip package structure, including a substrate, multiple chips and multiple discrete devices that are packaged on an upper surface of the substrate, and a heat dissipation apparatus, where the heat dissipation apparatus includes an insulation layer and a thermally conductive layer that are laminated. The insulation layer completely encloses and adheres to outer surfaces of the multiple chips, outer surfaces of the multiple discrete devices, and the upper surface of the substrate and configured to conduct heat generated by the multiple chips and the multiple discrete devices to the thermally conductive layer and the substrate such that the heat generated by the multiple chips and the multiple discrete devices dissipated using the thermally conductive layer and the substrate.

Abstract: An apparatus includes a circuit device, a heat sink fin, and a thermal interface material layer. The thermal interface material layer is thermally coupled to the circuit device and the heat sink fin. The thermal interface material layer includes a first alloy layer, a nanometal particle layer, and a second alloy layer. The first alloy layer is thermally coupled to the circuit device. The nanometal particle layer is thermally coupled to the first alloy layer. The nanometal particle layer includes nanometal particles and an intermediate mixture.

Abstract: The present invention provide an IC die, including an underlay; an active component; an interconnection layer, covering the active component, where the interconnection layer includes multiple metal layers and multiple dielectric layers, the multiple metal layers and the multiple dielectric layers are alternately arranged, a metal layer whose distance to the active component is the farthest in the multiple metal layers includes metal cabling and a metal welding pad; and a heat dissipation layer, where the heat dissipation layer covers a region above the interconnection layer except a position corresponding to the metal welding pad, the heat dissipation layer is located under a package layer, the package layer includes a plastic packaging material, and the heat dissipation layer includes an electrical-insulating material whose heat conductivity is greater than a preset value.