Patents by Inventor Shujiroh Uesaka

Shujiroh Uesaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240026503
    Abstract: Along with higher performance of products, materials are also required to achieve both a high strength and favorable magnetic properties according to applications of products. Therefore, the present invention provides an Fe—Co-based alloy bar which enables both a high strength and favorable magnetic properties to be achieved. An Fe—Co-based alloy bar contains 30% to 80% of crystal grains having a grain orientation spread (GOS) value of 0.5° or more in terms of an area ratio, and having an average crystal grain size number of more than 8.5 and 12.0 or less. The Fe—Co-based alloy bar of the present invention has a high 0.2% yield strength after magnetic annealing so that it can support various high-strength applications.
    Type: Application
    Filed: September 14, 2021
    Publication date: January 25, 2024
    Applicant: Proterial, Ltd.
    Inventors: Daiki Kato, Hidetaka Yakabe, Masaru Fujiyoshi, Shujiroh Uesaka, Shinsuke Sasabe
  • Publication number: 20230416881
    Abstract: The present invention provides an Fe—Co-based alloy bar which enables excellent magnetic properties to be reliably obtained. In the Fe—Co-based alloy bar, an area ratio of crystal grains having a grain orientation spread (GOS) value of 0.5° or more exceeds 80%, and the difference between an area ratio of crystal grains having a GOS value of 0.5° or more observed in a cross section in a direction perpendicular to an axis of the bar and an area ratio of crystal grains having a GOS value of 0.5° or more observed in a cross section in an axial direction of the bar is within 10%. Preferably, the average crystal grain size number is 6.0 or more and 8.5 or less.
    Type: Application
    Filed: September 14, 2021
    Publication date: December 28, 2023
    Applicant: Proterial, Ltd.
    Inventors: Masaru Fujiyoshi, Shujiroh Uesaka, Kouji Kobayashi
  • Publication number: 20230349028
    Abstract: An Fe—Co-based alloy bar and a method for manufacturing same, whereby excellent magnetic properties can be reliably obtained. The method for manufacturing an Fe—Co-based alloy bar comprises a heating straightening step for applying tensile stress to a hot-rolled material of an Fe—Co-based alloy while heating the hot-rolled material to a temperature of 500-900° C. Preferably, ohmic heating is used as a heating means in the heating straightening step. In addition, the Fe—Co-based alloy bar has 20% or more by area ratio of crystal grains having a grain orientation spread (GOS) value of at least 0.5°.
    Type: Application
    Filed: March 10, 2021
    Publication date: November 2, 2023
    Applicant: Proterial, Ltd.
    Inventors: Masaru FUJIYOSHI, Shujiroh UESAKA, Kouji KOBAYASHI
  • Patent number: 9435007
    Abstract: A titanium metal production apparatus is provided with (a) a first flow channel that supplies magnesium in a state of gas, (b) a second flow channel that supplies titanium tetrachloride in a state of gas, (c) a gas mixing section in which the magnesium and titanium tetrachloride in a state of gas are mixed and the temperature is controlled to be 1600° C. or more, (d) a titanium metal deposition section in which particles for deposition are arranged so as to be movable, the temperature is in the range of 715 to 1500° C., and the absolute pressure is 50 kPa to 500 kPa, and (e) a mixed gas discharge section which is in communication with the titanium metal deposition section.
    Type: Grant
    Filed: November 16, 2011
    Date of Patent: September 6, 2016
    Assignees: HITACHI METALS, LTD., TEKNA PLASMA SYSTEMS INC.
    Inventors: Gang Han, Tatsuya Shoji, Shujiroh Uesaka, Mariko Fukumaru, Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz
  • Patent number: 9163299
    Abstract: A device for producing titanium metal comprises (a) a first heating unit that heats and gasifies magnesium and a first channel that feeds the gaseous magnesium, (b) a second heating unit that heats and gasifies titanium tetrachloride so as to have a temperature of at least 1600° C. and a second channel that feeds the gaseous titanium tetrachloride, (c) a venturi section at which the second channel communicates with an entrance channel, the first channel merges into a throat and as a result the magnesium and the titanium tetrachloride combine in the throat and a mixed gas is formed in the exit channel, and in which the temperature of the throat and the exit channel is regulated to be at least 1600° C., (d) a titanium metal deposition unit that communicates with the exit channel and has a substrate for deposition with a temperature in the range of 715-1500° C., and (e) a mixed gas discharge channel that communicates with the titanium metal deposition unit.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: October 20, 2015
    Assignees: HITACHI METALS, LTD., TEKNA PLASMA SYSTEMS INC.
    Inventors: Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz, Gang Han, Shujiroh Uesaka, Tatsuya Shoji
  • Patent number: 8871303
    Abstract: Disclosed is a method for producing titanium metal, which comprises: (a) a step in which a mixed gas is formed by supplying titanium tetrachloride and magnesium into a mixing space that is held at an absolute pressure of 50-500 kPa and at a temperature not less than 1700° C.; (b) a step in which the mixed gas is introduced into a deposition space; (c) a step in which titanium metal is deposited and grown on a substrate for deposition; and (d) a step in which the mixed gas after the step (c) is discharged. In this connection, the deposition space has an absolute pressure of 50-500 kPa, the substrate for deposition is arranged in the deposition space, and at least a part of the substrate for deposition is held within the temperature range of 715-1500° C.
    Type: Grant
    Filed: May 28, 2010
    Date of Patent: October 28, 2014
    Assignees: Hitachi Metals, Ltd., Tekna Plasma Systems Inc.
    Inventors: Gang Han, Shujiroh Uesaka, Tatsuya Shoji, Mariko Fukumaru (nee ABE), Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz
  • Publication number: 20130255443
    Abstract: A titanium metal production apparatus is provided with (a) a first flow channel that supplies magnesium in a state of gas, (b) a second flow channel that supplies titanium tetrachloride in a state of gas, (c) a gas mixing section in which the magnesium and titanium tetrachloride in a state of gas are mixed and the temperature is controlled to be 1600° C. or more, (d) a titanium metal deposition section in which particles for deposition are arranged so as to be movable, the temperature is in the range of 715 to 1500° C., and the absolute pressure is 50 kPa to 500 kPa, and (e) a mixed gas discharge section which is in communication with the titanium metal deposition section.
    Type: Application
    Filed: November 16, 2011
    Publication date: October 3, 2013
    Applicants: TEKNA PLASMA SYSTEMS INC., HITACHI METALS, LTD.
    Inventors: Gang Han, Tatsuya Shoji, Shujiroh Uesaka, Mariko Fukumaru, Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz
  • Publication number: 20130255445
    Abstract: A device for producing titanium metal comprises (a) a first heating unit that heats and gasifies magnesium and a first channel that feeds the gaseous magnesium, (b) a second heating unit that heats and gasifies titanium tetrachloride so as to have a temperature of at least 1600° C. and a second channel that feeds the gaseous titanium tetrachloride, (c) a venturi section at which the second channel communicates with an entrance channel, the first channel merges into a throat and as a result the magnesium and the titanium tetrachloride combine in the throat and a mixed gas is formed in the exit channel, and in which the temperature of the throat and the exit channel is regulated to be at least 1600° C., (d) a titanium metal deposition unit that communicates with the exit channel and has a substrate for deposition with a temperature in the range of 715-1500° C., and (e) a mixed gas discharge channel that communicates with the titanium metal deposition unit.
    Type: Application
    Filed: November 17, 2011
    Publication date: October 3, 2013
    Applicants: TEKNA PLASMA SYSTEMS INC., HITACHI METALS, LTD.
    Inventors: Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz, Gang Han, Shujiroh Uesaka, Tatsuya Shoji
  • Publication number: 20130095243
    Abstract: A metal titanium production device comprising: (a) a magnesium evaporation unit in which solid magnesium is evaporated and a first flow path which is communicated with the evaporation unit and through which gaseous magnesium is supplied; (b) a second flow path through which gaseous titanium tetrachloride is supplied; (c) a gas mixing unit which is communicated with the first flow path and the second flow path and in which the gaseous magnesium is mixed with titanium tetrachloride, the absolute pressure is adjusted to 50 to 500 kPa and the temperature is adjusted to 1600° C. or higher; (d) a metal titanium precipitation unit which is communicated with the gas mixing unit and in which a precipitation substrate having at least partially a temperature of 715 to 1500° C. is placed and the absolute pressure is adjusted to 50 to 500 kPa; and (e) a mixed gas discharge unit which is communicated with the metal titanium precipitation unit.
    Type: Application
    Filed: March 7, 2011
    Publication date: April 18, 2013
    Applicants: TEKNA PLASMA SYSTEMS INC., HITACHI METALS, LTD.
    Inventors: Gang Han, Tatsuya Shoji, Shujiroh Uesaka, Mariko Fukumaru (Abe), Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz
  • Publication number: 20120070578
    Abstract: Disclosed is a method for producing titanium metal, which comprises: (a) a step in which a mixed gas is formed by supplying titanium tetrachloride and magnesium into a mixing space that is held at an absolute pressure of 50-500 kPa and at a temperature not less than 1700° C.; (b) a step in which the mixed gas is introduced into a deposition space; (c) a step in which titanium metal is deposited and grown on a substrate for deposition; and (d) a step in which the mixed gas after the step (c) is discharged. In this connection, the deposition space has an absolute pressure of 50-500 kPa, the substrate for deposition is arranged in the deposition space, and at least a part of the substrate for deposition is held within the temperature range of 715-1500° C.
    Type: Application
    Filed: May 28, 2010
    Publication date: March 22, 2012
    Applicants: TEKNA PLASMA SYSTEMS, INC., HITACHI METALS, LTD.
    Inventors: Gang Han, Shujiroh Uesaka, Tatsuya Shoji, Mariko Fukumaru (nee ABE), Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz
  • Patent number: 8092570
    Abstract: A process and apparatus for producing titanium metal is described herein. The process comprises generating an RF thermal plasma discharge using a plasma torch provided with an RF coil; reducing titanium tetrachloride to a titanium metal by supplying titanium tetrachloride and magnesium into the RF thermal plasma discharge; and collecting or depositing the titanium metal at a temperature not lower than the boiling point of magnesium chloride and not higher than the boiling point of the titanium metal.
    Type: Grant
    Filed: March 30, 2009
    Date of Patent: January 10, 2012
    Assignees: Hitachi Metals, Ltd., Tekna Plasma Systems Inc.
    Inventors: Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz, Gang Han, Shujiroh Uesaka, Hiroshi Takashima
  • Patent number: 8012235
    Abstract: A process for producing a low-oxygen metal powder, comprising passing a raw metal powder coated by hot melting of a hydrocarbon organic compound through thermal plasma flame composed mainly of an inert gas so as to reduce the content of oxygen in the raw metal powder. Preferably, the obtained metal powder is subjected to heat treatment in vacuum or hydrogen atmosphere. Preferred example of the hydrocarbon organic compound is stearic acid.
    Type: Grant
    Filed: April 14, 2006
    Date of Patent: September 6, 2011
    Assignee: Hitachi Metals, Ltd.
    Inventors: Hiroshi Takashima, Gang Han, Shujiroh Uesaka, Tomonori Ueno
  • Publication number: 20090260481
    Abstract: A process and apparatus for producing titanium metal is described herein. The process comprises generating an RF thermal plasma discharge using a plasma torch provided with an RF coil; reducing titanium tetrachloride to a titanium metal by supplying titanium tetrachloride and magnesium into the RF thermal plasma discharge; and collecting or depositing the titanium metal at a temperature not lower than the boiling point of magnesium chloride and not higher than the boiling point of the titanium metal.
    Type: Application
    Filed: March 30, 2009
    Publication date: October 22, 2009
    Applicants: Hitashi Metals, Ltd., Tekna Plasma Systems Inc.
    Inventors: Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz, Gang Han, Shujiroh Uesaka, Hiroshi Takashima
  • Publication number: 20090229412
    Abstract: A process for producing a low-oxygen metal powder, comprising passing a raw metal powder coated by hot melting of a hydrocarbon organic compound through thermal plasma flame composed mainly of an inert gas so as to reduce the content of oxygen in the raw metal powder. Preferably, the obtained metal powder is subjected to heat treatment in vacuum or hydrogen atmosphere. Preferred example of the hydrocarbon organic compound is stearic acid.
    Type: Application
    Filed: April 14, 2006
    Publication date: September 17, 2009
    Inventors: Hiroshi Takashima, Gang Han, Shujiroh Uesaka, Tomonori Ueno
  • Patent number: 7381363
    Abstract: A plasma processing apparatus for powder, and a plasma processing method of powder, in which a powder supply nozzle is provided to supply a powder material into plasma flame generated inside a high-frequency coil, the powder supply nozzle arranged substantially radially centrally of the high-frequency coil comprises a revolving flow forming device, for example, a spiral-shaped plate, to cause a carrier gas and the powder material to form therein a revolving flow with an axis thereof directed axially of the high-frequency coil, and the revolving flow is discharged from an outlet at an end of the nozzle. More preferably, a transition space is provided between the outlet at the end of the nozzle and the revolving flow forming device, and the outlet at the end of the nozzle is made small in diameter.
    Type: Grant
    Filed: November 29, 2004
    Date of Patent: June 3, 2008
    Assignee: Hitachi Metals, Ltd.
    Inventors: Shujiroh Uesaka, Gang Han, Eiji Hirakawa
  • Publication number: 20050183542
    Abstract: A plasma processing apparatus for powder, and a plasma processing method of powder, in which a powder supply nozzle is provided to supply a powder material into plasma flame generated inside a high-frequency coil, the powder supply nozzle arranged substantially radially centrally of the high-frequency coil comprises a revolving flow forming device, for example, a spiral-shaped plate, to cause a carrier gas and the powder material to form therein a revolving flow with an axis thereof directed axially of the high-frequency coil, and the revolving flow is discharged from an outlet at an end of the nozzle. More preferably, a transition space is provided between the outlet at the end of the nozzle and the revolving flow forming device, and the outlet at the end of the nozzle is made small in diameter.
    Type: Application
    Filed: November 29, 2004
    Publication date: August 25, 2005
    Inventors: Shujiroh Uesaka, Gang Han, Eiji Hirakawa