Abstract: A high temperature piezoelectric sensor device such as a high temperature accelerometer, force sensor, pressure sensor, temperature sensor, acoustic sensor and/or acoustic transducer for use at temperatures up to 1000° C. The high temperature device includes a base, a piezoelectric element attached to the base and a pair of electrodes in electrical communication with the piezoelectric element. The piezoelectric element can have a d15 piezoelectric coefficient between 16.0-18.0 pC/N for all temperatures between 25 to 700° C., and a rotated d33 piezoelectric coefficient of 8.0-9.5 pC/N with zero face shear/thickness shear piezoelectric coefficients d34. d35 and d36 in the same temperature range. The piezoelectric element can also have an electromechanical coupling factor k15 variation of less than 7%, and d15 and rotated d33 piezoelectric coefficient variations of less than 5% for temperatures between 25 to 700° C.

Abstract: The application is directed to piezoelectric single crystals having shear piezoelectric coefficients with enhanced temperature and/or electric field stability. These piezoelectric single crystal may be used, among other things, for vibration sensors as well as low frequency, compact sonar transducers with improved and/or enhanced performance.

Abstract: A high temperature piezoelectric sensor device such as a high temperature accelerometer, force sensor, pressure sensor, temperature sensor, acoustic sensor and/or acoustic transducer for use at temperatures up to 1000° C. The high temperature device includes a base, a piezoelectric element attached to the base and a pair of electrodes in electrical communication with the piezoelectric element. The piezoelectric element can have a d15 piezoelectric coefficient between 16.0-18.0 pC/N for all temperatures between 25 to 700° C., and a rotated d33 piezoelectric coefficient of 8.0-9.5 pC/N with zero face shear/thickness shear piezoelectric coefficients d34. d35 and d36 in the same temperature range. The piezoelectric element can also have an electromechanical coupling factor k15 variation of less than 7%, and d15 and rotated d33 piezoelectric coefficient variations of less than 5% for temperatures between 25 to 700° C.

Abstract: The application is directed to piezoelectric single crystals having shear piezoelectric coefficients with enhanced temperature and/or electric field stability. These piezoelectric single crystal may be used, among other things, for vibration sensors as well as low frequency, compact sonar transducers with improved and/or enhanced performance.

Abstract: The application is directed to piezoelectric single crystals having shear piezoelectric coefficients with enhanced temperature and/or electric field stability. These piezoelectric single crystal may be used, among other things, for vibration sensors as well as low frequency, compact sonar transducers with improved and/or enhanced performance.

Abstract: A ternary polycrystalline material based on lead hafnate (PbHfO3) and having improved dielectric, piezoelectric, and/or thermal stability properties. The Pb(Hf,Ti)O3 based material can exhibit enhanced electromechanical coupling factors when compared to PZT based ceramics and can be used as high performance actuators, piezoelectric sensors and/or ultrasonic transducers. The ternary polycrystalline material can have a perovskite crystal structure with an ABO3 formula and can be characterized by a substitution of heterovalent acceptor and donor ions at A or B (Zr/Hf) sites.

Abstract: Piezoelectric compounds of the formula xNamBinTiO3-yKmBinTiO3-zLimBinTiO3-pBaTiO3 where (0<x?1), (0?y?1), (0?z?1), (0.3?m?0.7), (0.3?n?0.7), (0<p?1) (0.9?m/n?1.1) as well as to doped variations thereof are disclosed. The material is suitable for high power applications.

Abstract: A <110> domain engineered relaxor-PT single crystals having a dielectric loss of about 0.2%, a high electromechanical coupling factor greater than about 85%, and high mechanical quality factor greater than about 500 is disclosed. In one embodiment, the relaxor-PT material has the general formula, Pb(B1B2)O3—Pb(B3)O3, where B1 may be one ion or combination of Mg2+, Zn2+, Ni2+, Sc3+, In3+, Yb3+, B2 may be one ion or combination of Nb5+, Ta5+, W6+, and B3 may be Ti4+ or combination of Ti4+ with Zr4+ and/or Hf4+.

Abstract: The application is directed to piezoelectric single crystals having shear piezoelectric coefficients with enhanced temperature and/or electric field stability. These piezoelectric single crystal may be used, among other things, for vibration sensors as well as low frequency, compact sonar transducers with improved and/or enhanced performance.

Abstract: A <110> domain engineered relaxor-PT single crystals having a dielectric loss of about 0.2%, a high electromechanical coupling factor greater than about 85%, and high mechanical quality factor greater than about 500 is disclosed. In one embodiment, the relaxor-PT material has the general formula, Pb(B1B2)O3—Pb(B3)O3, where B1 may be one ion or combination of Mg2+, Zn2+, Ni2+, Sc3+, In3+, Yb3+, B2 may be one ion or combination of Nb5+, Ta5+, W6+, and B3 may be Ti4+ or combination of Ti4+ with Zr4+ and/or Hf4+.

Abstract: Piezoelectric compounds of the formula xNamBinTiO3-yKmBinTiO3-zLimBinTiO3-pBaTiO3 where (0<x?1), (0?y?1), (0?z?1), (0.3?m?0.7), (0.3?n?0.7), (0<p?1) (0.9?m/n?1.1) as well as to doped variations thereof are disclosed. The material is suitable for high power applications.

Abstract: Piezoelectric devices with excellent high temperature operation capabilities are described, including piezoelectric sensors and actuators that use a rare earth calcium oxyborate or langanite as the piezoelectric material.

Abstract: Piezoelectric devices with excellent high temperature operation capabilities are described, including piezoelectric sensors and actuators that use a rare earth calcium oxyborate or langanite as the piezoelectric material.

Abstract: Piezoelectric compounds of the formula xNamBinTiO3-yKmBinTiO3-zLimBinTiO3-pBaTiO3 where (0<x?1), (0?y?1), (0?z?1), (0.3?m?0.7), (0.3?n?0.7), (0<p?1) (0.9?m/n?1.1) as well as to doped variations thereof are disclosed. The material is suitable for high power applications.