Patents by Inventor Shuk-Wa FUNG

Shuk-Wa FUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trench gate power semiconductor field effect transistor
    Patent number: 9755043
    Abstract: Provided in the present invention is a trench gate power MOSFET (TMOS/UMOS) structure with a heavily doped polysilicon source region. The polysilicon source region is formed by deposition, and a trench-shaped contact hole is used at the source region, in order to attain low contact resistance and small cell pitch. The present invention may also be implemented in an IGBT.
    Type: Grant
    Filed: December 4, 2014
    Date of Patent: September 5, 2017
    Inventor: Shuk-Wa Fung
  • TRENCH GATE POWER SEMICONDUCTOR FIELD EFFECT TRANSISTOR
    Publication number: 20160372572
    Abstract: Provided in the present invention is a trench gate power MOSFET (TMOS/UMOS) structure with a heavily doped polysilicon source region. The polysilicon source region is formed by deposition, and a trench-shaped contact hole is used at the source region, in order to attain low contact resistance and small cell pitch. The present invention may also be implemented in an IGBT.
    Type: Application
    Filed: December 4, 2014
    Publication date: December 22, 2016
    Inventor: Shuk-Wa FUNG