Abstract: The present disclosure provides a preparation method of a thin film solar battery, including the following steps: a) performing a first etching of the back electrode layer to form a plurality of first grooves; b) forming an insulator in each of the plurality of first grooves, thereby forming a plurality of insulators; c) forming a light absorption layer and a buffer layer sequentially on a surface of the back electrode layer, performing a second etching of the light absorption layer and the buffer layer to form a plurality of second grooves; and d) forming an upper electrode layer on a surface of the buffer layer, the upper electrode layer extending to the plurality of second grooves, and performing a third etching of the upper electrode layer, the buffer layer, and the light absorption layer to form a plurality of third grooves passing through the upper electrode layer, the buffer layer, and the light absorption layer, so as to obtain a plurality of serially connected battery cells.

Abstract: A thin film solar cell, including a substrate and a plurality of cell units disposed on the substrate, each cell unit includes a back electrode layer, a light absorbing layer, a buffer layer, and an upper electrode layer which are sequentially disposed. A first groove throughout the back electrode layer is disposed between the back electrode layers of any two adjacent cell units; the first groove is filled with an insulating portion. A second groove throughout the light absorbing layer and the buffer layer is disposed in each cell unit, the upper electrode layer of this cell unit extends to the second groove of this cell unit to contact the back electrode layer of the other cell unit of the two adjacent cell units. A third groove is disposed between the two adjacent cell units, the third groove insulate the upper electrode layers of the two adjacent cell units.

Abstract: A method and an apparatus for processing radioactive wastewater are provided, wherein the radioactive wastewater is processed by using Disc Tube Reverse Osmosis (DTRO) membrane assembly, thereby achieving both the effects of high decontamination factors and high concentration multiples. In said method, the radioactive wastewater passes through the first-stage membrane assembly and the second-stage membrane assembly in sequence to obtain the second-stage clear water, and the first-stage concentrated water flowing out of the first-stage membrane assembly enters the third-stage membrane assembly to obtain concentrate.

Abstract: A preparation method of a copper indium gallium selenide (CIGS) absorption layer, including: forming a prefabricated copper indium gallium film on a substrate; placing the prefabricated copper indium gallium film in a reaction chamber having a first temperature threshold; introducing a selenium atmosphere having a first carrier gas flow value into the reaction chamber, such that the prefabricated copper indium gallium film reacts within a first duration to form an unsaturated In—Se binary phase and an unsaturated Cu—Se binary phase on a surface of the prefabricated copper indium gallium film; introducing a selenium atmosphere having a second carrier gas flow value into the reaction chamber, such that the prefabricated copper indium gallium film reacts within a second preset duration to obtain a prefabricated CIGS film; annealing the prefabricated CIGS film within a second preset temperature threshold and a third preset duration to obtain a solar cell absorption layer.

Abstract: The present invention relates to a TFT substrate manufacturing method. The TFT substrate manufacturing method includes: Step 10: applying a first mask-based operation to form a TFT gate electrode pattern on a base plate; Step 20: applying a second mask-based operation to form an active layer pattern and a source/drain metal electrode pattern on the base plate; Step 30: depositing a passivation layer on the base plate, applying a third mask-based operation to define a pixel electrode pattern, conducting etching and photoresist haze operations, and then depositing a pixel electrode; and Step 40: conducting etching or direct photoresist stripping to form the pixel electrode pattern.

Abstract: The present invention relates to a TFT substrate manufacturing method. The TFT substrate manufacturing method includes: Step 10: applying a first mask-based operation to form a TFT gate electrode pattern on a base plate; Step 20: applying a second mask-based operation to form an active layer pattern and a source/drain metal electrode pattern on the base plate; Step 30: depositing a passivation layer on the base plate, applying a third mask-based operation to define a pixel electrode pattern, conducting etching and photoresist haze operations, and then depositing a pixel electrode; and Step 40: conducting etching or direct photoresist stripping to form the pixel electrode pattern.

Abstract: A thin-film transistor includes a base plate; a gate zone arranged on a surface of the base plate; an insulation layer covering the gate zone; a first conductive section arranged on a surface of the insulation layer that is distant from the gate zone; a second conductive section arranged on the surface of the insulation layer and spaced from the first conductive section; a source zone arranged on a surface of the first conductive section that is distant from the insulation layer; a drain zone arranged on a surface of the second conductive section that is distant from the insulation layer; an active layer arranged on the surface of the insulation layer and having two ends respectively and electrically connected to the source zone and the drain zone; and a passivation layer covering the source zone, the drain zone and the active layer.

Abstract: A method and an apparatus for processing radioactive wastewater are provided, wherein the radioactive wastewater is processed by using Disc Tube Reverse Osmosis (DTRO) membrane assembly, thereby achieving both the effects of high decontamination factors and high concentration multiples. In said method, the radioactive wastewater passes through the first-stage membrane assembly and the second-stage membrane assembly in sequence to obtain the second-stage clear water, and the first-stage concentrated water flowing out of the first-stage membrane assembly enters the third-stage membrane assembly to obtain concentrate.

Abstract: An ELISpot diagnosis kit for NMO and its application are characterized in that, the polypeptide fragment specific to NMO effector T-cell is obtained through topological conformation analysis of aquaporin-4 (AQP-4), followed by the structural analyses of the related polypeptides after combination and rearrangement so as to screen out the brand-new polypeptide fragment suitable for NMO disease diagnosis. In the ELISpot experiment, by utilizing the obtained polypeptide fragment, stimulate the effector T-cell in the NMO disease to secrete IL-4, proving the feasibility and scientific value of that polypeptide fragment in the NMO diagnosis. This method is with strong specificity, high sensitivity and easy operations, and it can be developed into the diagnosis kit for the diagnosis and differential diagnosis of NMO in the clinical examination, laying the foundation for the early discovery and treatment of NMO.