Abstract: In an example, a semiconductor device includes a first semiconductor structure including a memory array device, a second semiconductor structure including a peripheral device, and a bonding structure comprising a first bonding pad, a second bonding pad, and a remainder layer located between and in contact with the first and second bonding pad in a vertical direction. The first bonding pad is located between the remainder layer and the first semiconductor structure in the vertical direction. The second bonding pad is located between the remainder layer and the second semiconductor structure in the vertical direction. A conductive material of the remainder layer is cobalt metal different from the first and second bonding pads.

Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first device layer is formed on a first substrate. A first bonding layer including a first bonding contact is formed above the first device layer. A first capping layer is formed at an upper end of the first bonding contact. The first capping layer has a conductive material different from a remainder of the first bonding contact. A second device layer is formed on a second substrate. A second bonding layer including a second bonding contact is formed above the second device layer. The first substrate and the second substrate are bonded in a face-to-face manner, so that the first bonding contact is in contact with the second bonding contact by the first capping layer.

Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first and second semiconductor structures. The first semiconductor structure includes a substrate, a first device layer disposed on the substrate, and a first bonding layer disposed above the first device layer and including a first bonding contact. The second semiconductor structure includes a second device layer, and a second bonding layer disposed below the second device layer and including a second bonding contact. The first bonding contact is in contact with the second bonding contact at the bonding interface. At least one of the first bonding contact and the second bonding contact includes a capping layer at the bonding interface and having a conductive material different from a remainder of the respective first or second bonding contact.

Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first device layer is formed on a first substrate. A first bonding layer including a first bonding contact is formed above the first device layer. A first capping layer is formed at an upper end of the first bonding contact. The first capping layer has a conductive material different from a remainder of the first bonding contact. A second device layer is formed on a second substrate. A second bonding layer including a second bonding contact is formed above the second device layer. The first substrate and the second substrate are bonded in a face-to-face manner, so that the first bonding contact is in contact with the second bonding contact by the first capping layer.

Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first and second semiconductor structures. The first semiconductor structure includes a substrate, a first device layer disposed on the substrate, and a first bonding layer disposed above the first device layer and including a first bonding contact. The second semiconductor structure includes a second device layer, and a second bonding layer disposed below the second device layer and including a second bonding contact. The first bonding contact is in contact with the second bonding contact at the bonding interface. At least one of the first bonding contact and the second bonding contact includes a capping layer at the bonding interface and having a conductive material different from a remainder of the respective first or second bonding contact.