Abstract: The present invention discloses a negative capacitance transistor with a ?-Ga2O3/Al2O3 composite ferroelectric dielectric layer. The transistor comprises a substrate, a GaN buffer layer, a UID-GaN channel layer, an Al0.25Ga0.75N barrier layer arranged sequentially from bottom to top; a source, a drain, and a gate disposed on the Al0.25Ga0.75N barrier layer; and a ?-Ga2O3/Al2O3 composite ferroelectric dielectric layer disposed between the gate and the Al0.25Ga0.75N barrier layer. The negative capacitance transistor of the present invention can improve system stability and data retention reliability after power-off while ensuring high-speed data processing capability.

Abstract: An MPCVD device capable of realizing effective doping comprises a reaction chamber and a gas input structure, wherein the gas input structure includes a first pipeline and a second pipeline for reaction gas, a first gas distributor connected with the first pipeline that uniformly transports gas as a first reactant into the reaction chamber through a gas outlet of the first pipeline located near the top of the reaction chamber, wherein the second pipeline uniformly inputs a doped reaction gas to a surface of a substrate through a second gas distributor in the form of a gas transport ring having a circular shape, wherein a height in the vertical direction of the gas transport ring connected with the second pipeline is substantially the same as that of a support for the substrate. The gas transport ring can be concentrically placed at a center position inside the support, or concentrically placed outside the support.

Abstract: An MPCVD device capable of realizing effective doping, comprises a reaction chamber and a gas input structure, wherein the gas input structure includes a first pipeline and a second pipeline for reaction gas, a first gas distributor, connected with the first pipeline, uniformly transports gas as a first reactant into the reaction chamber through a gas outlet of the first pipeline located near the top of the reaction chamber, the second pipeline uniformly inputs a doped reaction gas to a surface of a substrate through a second gas distributor with circular shape, a height of the gas transport ring connected with the second pipeline is substantially the same as that of a support for the substrate, and the gas transport ring can be concentrically placed at a center position inside the support, or the gas transport ring can also be concentrically placed outside the support.