Abstract: The present invention discloses a manufacturing method of a solar cell, including: forming an electricity generation layer on a substrate; forming an ohmic contact layer on a surface of the electricity generation layer facing away from the substrate; forming a back electrode on a surface of the substrate facing away from the electricity generation layer; and forming a top electrode on a surface of the ohmic contact layer facing away from the electricity generation layer using a printing process. The present invention discloses a solar cell. The present invention solves the problem of low capacity of the solar cell at present.

Abstract: The present invention discloses a super-flexible transparent semiconductor film and a preparation method thereof, the method includes: providing an epitaxial substrate; growing a sacrificial layer on the epitaxial substrate; stacking and growing at least one layer of Al1-nGanN epitaxial layer on the sacrificial layer, wherein 0<n?1; growing a nanopillar array containing GaN materials on the Al1-nGanN epitaxial layer; etching the sacrificial layer so as to peel off an epitaxial structure on the sacrificial layer as a whole; and transferring the epitaxial structure after peeling onto a surface of the flexible transparent substrate. Compared to traditional planar films, the present invention can not only improve the crystal quality by releasing stress, but also improve flexibility and transparency through characteristics of the nanopillar materials.

Abstract: The present invention discloses a manufacturing method of a solar cell, including: forming an electricity generation layer on a substrate; forming an ohmic contact layer on a surface of the electricity generation layer facing away from the substrate; forming a back electrode on a surface of the substrate facing away from the electricity generation layer; and forming a top electrode on a surface of the ohmic contact layer facing away from the electricity generation layer using a printing process. The present invention discloses a solar cell. The present invention solves the problem of low capacity of the solar cell at present.

Abstract: The present invention discloses a super-flexible transparent semiconductor film and a preparation method thereof, the method includes: providing an epitaxial substrate; growing a sacrificial layer on the epitaxial substrate; stacking and growing at least one layer of Al1-nGanN epitaxial layer on the sacrificial layer, wherein 0<n?1; growing a nanopillar array containing GaN materials on the Al1-nGanN epitaxial layer; etching the sacrificial layer so as to peel off an epitaxial structure on the sacrificial layer as a whole; and transferring the epitaxial structure after peeling onto a surface of the flexible transparent substrate. Compared to traditional planar films, the present invention can not only improve the crystal quality by releasing stress, but also improve flexibility and transparency through characteristics of the nanopillar materials.

Abstract: The present disclosure provides a flexible solar cell and a manufacturing method thereof. The manufacturing method includes disposing a flexible substrate on a back electrode to transfer to the solar cell unit and the flexible substrate onto a temporary substrate, and then separating the temporary substrate from the flexible substrate after the flexible solar cell is manufactured. Thus, it reduces tedious bonding and de-bonding operations in manufacturing process of the flexible solar cell, can improve production efficiency, and avoids damage of cells by a high-temperature condition required for bonding. Also, the process is quick and not easy to damage the solar cell. The front electrode, back electrode and flexible substrate in the flexible solar cell all can be prepared by plating, with a relatively low cost and low requirement for equipment, which is conductive to mass production in industry.

Abstract: A light receiving/emitting element 11 includes: a light receiving/emitting layer 21 in which a plurality of compound semiconductor layers are stacked; and an electrode 30 having a first surface 30A and a second surface 30B and made of a transparent conductive material, in which the second surface faces the first surface 30A, and the electrode is in contact, at the first surface 30A, with the light receiving/emitting layer 21. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surface 30A of the electrode 30 is higher than concentration of the additive contained in the transparent conductive material near the second surface 30B of the electrode 30.

Abstract: A light receiving/emitting element 11 includes: a light receiving/emitting layer 21 in which a plurality of compound semiconductor layers are stacked; and an electrode 30 having a first surface 30A and a second surface 30B and made of a transparent conductive material, in which the second surface faces the first surface 30A, and the electrode is in contact, at the first surface 30A, with the light receiving/emitting layer 21. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surface 30A of the electrode 30 is higher than concentration of the additive contained in the transparent conductive material near the second surface 30B of the electrode 30.

Abstract: A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers. At least one predetermined sub-cell is configured of first layers and a second layer. In each of the first layers, a 1-A layer and a 1-B layer are laminated. In the second layer, a 2-A layer and a 2-B layer are laminated. A composition A of the 1-A layer and the 2-A layer is determined based on a value of a band gap of the predetermined sub-cell. A composition B of the 1-B layer and the 2-B layer is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of 1-B layer and 2-B layer are determined based on difference between base lattice constant and a lattice constant of composition B, and on thickness of the 1-A layer and thickness of 2-A layer.

Abstract: A light receiving/emitting element 11 includes: a light receiving/emitting layer 21 in which a plurality of compound semiconductor layers are stacked; and an electrode 30 having a first surface 30A and a second surface 30B and made of a transparent conductive material, in which the second surface faces the first surface 30A, and the electrode is in contact, at the first surface 30A, with the light receiving/emitting layer 21. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surface 30A of the electrode 30 is higher than concentration of the additive contained in the transparent conductive material near the second surface 30B of the electrode 30.

Abstract: A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers. At least one predetermined sub-cell is configured of first layers and a second layer. In each of the first layers, a 1-A layer and a 1-B layer are laminated. In the second layer, a 2-A layer and a 2-B layer are laminated. A composition A of the 1-A layer and the 2-A layer is determined based on a value of a band gap of the predetermined sub-cell. A composition B of the 1-B layer and the 2-B layer is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of 1-B layer and 2-B layer are determined based on difference between base lattice constant and a lattice constant of composition B, and on thickness of the 1-A layer and thickness of 2-A layer.

Abstract: There is provided a multi-junction solar cell that reduces contact resistance of a junction portion and is capable of performing energy conversion with high efficiency. The multi-junction solar cell includes a plurality of sub-cells 11, 12, 13, and 14 that are laminated, the plurality of sub-cells 11, 12, 13, and 14 being configured of a plurality of compound semiconductor layers 11A, 11B, 11C, 12A, 12B, 12C, 13A, 13B, 13C, 14A, 14B, and 14C that are laminated. Amorphous connection layers 20A and 20B made of electrically-conductive material are provided in at least one place between the sub-cells 12 and 13 adjacent to each other.