Abstract: Increased resolution is available from acid-catalyzed photoresist used in fabricating integrated circuits by inhibiting chemically-basic contaminants from contacting the photoresist placed above an IC structure which emits those chemically-basic contaminants. The inhibition can result from physical barrier characteristics of a barrier layer placed between the contaminant-emitting surface and the overlying layer of photoresist, or the layer of barrier material may contain acid moieties which chemically neutralize the emitted chemically-basic contaminants before the contaminants reach the photoresist.

Abstract: Provided is a method and composition for obtaining consistent alignment mark profiles with both detectibiliy and detection accuracy for use in conjunction with CMP planarization processes in semiconductor fabrication. The method involves physical vapor deposition of metal over an angled, metal-lined alignment mark trench in the surface of a semiconductor wafer following wafer planarization by CMP. The shape of the trench creates a shadowing effect which produces minimal deposition in the angled region of the trench and overcomes asymmetric metal loss due to attack from slurry accumulating in the trench during CMP. The result is the formation of a reliable and reproducible alignment mark.

Abstract: Provided is a method and composition for protecting alignment mark trench walls from attack by CMP slurry accumulating in an alignment mark trench during CMP processing. In a preferred embodiment, a metal organic chemical vapor deposition titanium nitride (MOCVDTiN) layer is deposited over a conventionally applied bulk tungsten layer prior to commencing CMP operations. This MOCVDTiN layer is resistant to CMP slurry attack. As a result, the tungsten trench profile remains a consistent and reliable alignment mark.

Abstract: Provided is a method and composition for reducing the rate of, and rendering more uniform the oxidation of alignment mark trench side walls by CMP slurry accumulating in an alignment mark trench during CMP processing. In a preferred embodiment, a nucleation layer of tungsten having an equiaxed grain structure with fine grain size and conformity is deposited over a conventionally applied bulk tungsten layer prior to commencing CMP operations. The fine grain size and equiaxed grain structure of this nucleation layer make it more resistant and more uniform in response to slurry attack. As a result, the tungsten trench profile remains a consistent and reliable alignment mark.

Abstract: Provided is a method and composition for reducing the rate of, and rendering more uniform the oxidation of alignment mark trench side walls by CMP slurry accumulating in an alignment mark trench during CMP processing. In a preferred embodiment, a nucleation layer of tungsten having an equiaxed grain structure with fine grain size and conformity is deposited over a conventionally applied bulk tungsten layer prior to commencing CMP operations. The fine grain size and equiaxed grain structure of this nucleation layer make it more resistant and more uniform in response to slurry attack. As a result, the tungsten trench profile remains a consistent and reliable alignment mark.

Abstract: Provided is a method and composition for protecting alignment mark trench walls from attack by CMP slurry accumulating in an alignment mark trench during CMP processing. In a preferred embodiment, a metal organic chemical vapor deposition titanium nitride (MOCVDTiN) layer is deposited over a conventionally applied bulk tungsten layer prior to commencing CMP operations. This MOCVDTiN layer is resistant to CMP slurry attack. As a result, the tungsten trench profile remains a consistent and reliable alignment mark.

Abstract: Provided is a method and composition for obtaining consistent alignment mark profiles with both detectibiliy and detection accuracy for use in conjunction with CMP planarization processes in semiconductor fabrication. The method involves physical vapor deposition of metal over an angled, metal-lined alignment mark trench in the surface of a semiconductor wafer following wafer planarization by CMP. The shape of the trench creates a shadowing effect which produces minimal deposition in the angled region of the trench and overcomes asymmetric metal loss due to attack from slurry accumulating in the trench during CMP. The result is the formation of a reliable and reproducible alignment mark.