Patents by Inventor Shumpei Omine
Shumpei Omine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11133456Abstract: According to one embodiment, a magnetic storage device includes: a magnetoresistive effect element including a non-magnet, and a stacked structure on the non-magnet, the stacked structure including: a first ferromagnet on the non-magnet; an anti-ferromagnet being exchange-coupled with the first ferromagnet; and a second ferromagnet between the first ferromagnet and the anti-ferromagnet. The stacked structure is configured to: have a first resistance value in response to a first current flowing through the stacked structure in a first direction, and have a second resistance value different from the first resistance value in response to a second current flowing through the stacked structure in a second direction opposite to the first direction.Type: GrantFiled: March 13, 2019Date of Patent: September 28, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventors: Takeshi Iwasaki, Akiyuki Murayama, Tadashi Kai, Tadaomi Daibou, Masaki Endo, Shumpei Omine, Taichi Igarashi, Junichi Ito
-
Patent number: 10978636Abstract: According to one embodiment, a storage device includes a magnetoresistive effect element comprising a nonmagnetic layer and a stacked body on the nonmagnetic layer. The stacked body includes a first ferromagnetic layer on the nonmagnetic layer, a second ferromagnetic layer exchange-coupled with the first ferromagnetic layer, and a magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The magnetic layer includes a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.Type: GrantFiled: March 1, 2019Date of Patent: April 13, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventors: Takeshi Iwasaki, Akiyuki Murayama, Tadashi Kai, Tadaomi Daibou, Masaki Endo, Shumpei Omine, Taichi Igarashi, Junichi Ito
-
Patent number: 10707268Abstract: A magnetoresistive element according to an embodiment includes: a first layer; a first magnetic layer; a second magnetic layer disposed between the first layer and the first magnetic layer; a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and an insulating layer disposed at least on side surfaces of the nonmagnetic layer, the first layer including: at least one element selected from a first group consisting of Hf, Zr, Al, Cr, and Mg; and at least one element selected from a second group consisting of Ta, W, Mo, Nb, Si, Ge, Be, Li, Sn, Sb, and P, and the insulating layer including at least one element selected from the first group.Type: GrantFiled: August 14, 2018Date of Patent: July 7, 2020Assignee: TOSHIBA MEMORY CORPORATIONInventors: Masaki Endo, Tadaomi Daibou, Shumpei Omine, Akiyuki Murayama, Junichi Ito
-
Publication number: 20200083432Abstract: According to one embodiment, a magnetic storage device includes: a magnetoresistive effect element including a non-magnet, and a stacked structure on the non-magnet, the stacked structure including: a first ferromagnet on the non-magnet; an anti-ferromagnet being exchange-coupled with the first ferromagnet; and a second ferromagnet between the first ferromagnet and the anti-ferromagnet. The stacked structure is configured to: have a first resistance value in response to a first current flowing through the stacked structure in a first direction, and have a second resistance value different from the first resistance value in response to a second current flowing through the stacked structure in a second direction opposite to the first direction.Type: ApplicationFiled: March 13, 2019Publication date: March 12, 2020Applicant: TOSHIBA MEMORY CORPORATIONInventors: Takeshi IWASAKI, Akiyuki MURAYAMA, Tadashi KAI, Tadaomi DAIBOU, Masaki ENDO, Shumpei OMINE, Taichi IGARASHI, Junichi ITO
-
Publication number: 20200083431Abstract: According to one embodiment, a storage device includes a magnetoresistive effect element comprising a nonmagnetic layer and a stacked body on the nonmagnetic layer. The stacked body includes a first ferromagnetic layer on the nonmagnetic layer, a second ferromagnetic layer exchange-coupled with the first ferromagnetic layer, and a magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The magnetic layer includes a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.Type: ApplicationFiled: March 1, 2019Publication date: March 12, 2020Inventors: Takeshi IWASAKI, Akiyuki MURAYAMA, Tadashi KAI, Tadaomi DAIBOU, Masaki ENDO, Shumpei OMINE, Taichi IGARASHI, Junichi ITO
-
Patent number: 10340442Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.Type: GrantFiled: February 28, 2017Date of Patent: July 2, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naoki Hase, Takao Ochiai, Tadaomi Daibou, Yushi Kato, Shumpei Omine, Junichi Ito
-
Patent number: 10256394Abstract: A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.Type: GrantFiled: February 28, 2017Date of Patent: April 9, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Shumpei Omine, Tadaomi Daibou, Yushi Kato, Naoki Hase, Junichi Ito
-
Patent number: 10186656Abstract: A magnetic memory according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a first layer disposed between the first magnetic layer and the third magnetic layer, wherein the first layer contains at least one element selected from the group consisting of Co, Fe, Ni, and Mn, and at least one element selected from the group consisting of Ta, Mo, Zr, Nb, Hf, V, Ti, Sc, and La.Type: GrantFiled: September 13, 2017Date of Patent: January 22, 2019Assignee: Toshiba Memory CorporationInventors: Shumpei Omine, Takeshi Iwasaki, Masaki Endo, Akiyuki Murayama, Tadaomi Daibou, Tadashi Kai, Junichi Ito
-
Publication number: 20180374894Abstract: A magnetoresistive element according to an embodiment includes: a first layer; a first magnetic layer; a second magnetic layer disposed between the first layer and the first magnetic layer; a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and an insulating layer disposed at least on side surfaces of the nonmagnetic layer, the first layer including: at least one element selected from a first group consisting of Hf, Zr, Al, Cr, and Mg; and at least one element selected from a second group consisting of Ta, W, Mo, Nb, Si, Ge, Be, Li, Sn, Sb, and P, and the insulating layer including at least one element selected from the first group.Type: ApplicationFiled: August 14, 2018Publication date: December 27, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Masaki Endo, Tadaomi Daibou, Shumpei Omine, Akiyuki Murayama, Junichi Ito
-
Publication number: 20180268887Abstract: A magnetoresistive element according to an embodiment includes: a first nonmagnetic layer; a first magnetic layer; a second magnetic layer disposed between the first nonmagnetic layer and the first magnetic layer; a second nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third nonmagnetic layer disposed between the second nonmagnetic layer and the second magnetic layer; and a third magnetic layer disposed between the second nonmagnetic layer and the third nonmagnetic layer, wherein elements constituting the second magnetic layer at least partially differ from elements constituting the third magnetic layer, a relative permittivity of the first nonmagnetic layer is at least 10, and the third nonmagnetic layer contains at least one element selected from the group consisting of Nb, Ta, Mo, W, Hf, Zr, Ti, Sc, V, Cr, Mn, Fe, Co, Ni, Mg, Al, Ru, Ir, Rh, Pd, Pt, Cu, Ag, and Au.Type: ApplicationFiled: September 11, 2017Publication date: September 20, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Masaki ENDO, Tadaomi Daibou, Shumpei Omine, Junichi Ito, Akiyuki Murayama, Takeshi Iwasaki
-
Publication number: 20180269382Abstract: A magnetic memory according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a first layer disposed between the first magnetic layer and the third magnetic layer, wherein the first layer contains at least one element selected from the group consisting of Co, Fe, Ni, and Mn, and at least one element selected from the group consisting of Ta, Mo, Zr, Nb, Hf, V, Ti, Sc, and La.Type: ApplicationFiled: September 13, 2017Publication date: September 20, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Shumpei OMINE, Takeshi IWASAKI, Masaki ENDO, Akiyuki MURAYAMA, Tadaomi DAIBOU, Tadashi KAI, Junichi ITO
-
Patent number: 9991314Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR1-xhRx)z(TM1-yZy)1-z (0<x<1, 0?y?0.6, 0.13?z?0.22) where lR is at least one element of Y, La, Ce, Pr, Nd, and Sm, hR is at least one element of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, TM is at least one element of Mn, Fe, Co, or Ni, and Z is at least one element of B, C, Mg, Al, Sc, Ti, Cu, or Zn.Type: GrantFiled: September 12, 2016Date of Patent: June 5, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naoki Hase, Tadaomi Daibou, Yushi Kato, Shumpei Omine, Junichi Ito
-
Publication number: 20180083065Abstract: A magnetoresistive element according to an embodiment includes: a first layer; a first magnetic layer; a second magnetic layer disposed between the first layer and the first magnetic layer; a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and an insulating layer disposed at least on side surfaces of the nonmagnetic layer, the first layer including: at least one element selected from a first group consisting of Hf, Zr, Al, Cr, and Mg; and at least one element selected from a second group consisting of Ta, W, Mo, Nb, Si, Ge, Be, Li, Sn, Sb, and P, and the insulating layer including at least one element selected from the first group.Type: ApplicationFiled: February 28, 2017Publication date: March 22, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Masaki ENDO, Tadaomi DAIBOU, Shumpei OMINE, Akiyuki MURAYAMA, Junichi ITO
-
Patent number: 9859491Abstract: A magnetoresistive element according to an embodiment includes a stack structure, the stack structure including: a first magnetic layer containing Mn and at least one element of Ga, Ge, or Al; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one element of Mg, Ba, Ca, C, Sr, Sc, Y, Gd, Tb, Dy, Ce, Ho, Yb, Er, or B.Type: GrantFiled: September 8, 2016Date of Patent: January 2, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tadaomi Daibou, Yushi Kato, Shumpei Omine, Naoki Hase, Junichi Ito
-
Patent number: 9793469Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer.Type: GrantFiled: September 8, 2016Date of Patent: October 17, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yushi Kato, Tadaomi Daibou, Yuichi Ohsawa, Shumpei Omine, Naoki Hase
-
Publication number: 20170179374Abstract: A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.Type: ApplicationFiled: February 28, 2017Publication date: June 22, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shumpei OMINE, Tadaomi Daibou, Yushi Kato, Naoki Hase, Junichi Ito
-
Publication number: 20170170389Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.Type: ApplicationFiled: February 28, 2017Publication date: June 15, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Naoki HASE, Takao OCHIAI, Tadaomi DAIBOU, Yushi KATO, Shumpei OMINE, Junichi ITO
-
Publication number: 20160380186Abstract: A magnetoresistive element according to an embodiment includes a stack structure, the stack structure including: a first magnetic layer containing Mn and at least one element of Ga, Ge, or Al; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one element of Mg, Ba, Ca, C, Sr, Sc, Y, Gd, Tb, Dy, Ce, Ho, Yb, Er, or B.Type: ApplicationFiled: September 8, 2016Publication date: December 29, 2016Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tadaomi DAIBOU, Yushi KATO, Shumpei OMINE, Naoki HASE, Junichi ITO
-
Publication number: 20160380029Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR1-xhRx)z(TM1-yZy)1-z (0<x<1, 0?y?0.6, 0.13?z?0.22) where lR is at least one element of Y, La, Ce, Pr, Nd, and Sm, hR is at least one element of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, TM is at least one element of Mn, Fe, Co, or Ni, and Z is at least one element of B, C, Mg, Al, Sc, Ti, Cu, or Zn.Type: ApplicationFiled: September 12, 2016Publication date: December 29, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Naoki HASE, Tadaomi Daibou, Yushi Kato, Shumpei Omine, Junichi Ito
-
Publication number: 20160380184Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer.Type: ApplicationFiled: September 8, 2016Publication date: December 29, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Yushi KATO, Tadaomi DAIBOU, Yuichi OHSAWA, Shumpei OMINE, Naoki HASE