Abstract: An electric circuit is provided on a semiconductor substrate with a superconducting film. The surfaces being in contact with the superconducting film are made of heat-resistant non-oxide insulating materials so that the performance of the superconducting film is not degraded.

Abstract: A superconducting ceramic film is deposited on a substrate sputtering. In virtue of the low thermal conductivity of ceramic, a laser beam is radiated to the ceramic film in order to remove the irradiated portion by sublimation and produce a pattern on the ceramic film.

Abstract: An improved liquid crystal device is described such as a display. The device comprises a pair of substrates, a liquid crystal layer, an electrode arrangement, and a ferroelectric film. The ferroelectric film is formed on the inside of the substrate by spinning method using a mixture of a ferroelectric material and an organic resin. When coating, the mixture is diluted with a solvent so that the ferroelectric film can be formed as a thin film. In advance of curring, the ferroelectric film is subjected to an electric field and its dipole moment is aligned and fixed in a direction perpendicular to the substrate. In virtue of the dipole moment, the liquid crystal device can be controlled by applying a voltage in one direction with a high stability.

Abstract: A material consisting mainly of carbon can be formed on a surface by virtue of a microwave energy. A catalyst gas is introduced into a reaction chamber for ECR CVD, along with a carbon compound gas. The catalyst gas consists of a gaseous compound of germanium such as GeH.sub.4 and GeF.sub.4.

Abstract: An improved liquid crystal device is described such as a display. The device comprises a pair of substrates, a liquid crystal layer, an electrode arrangement, and a ferroelectric film. The ferroelectric film is formed on the inside of the substrate by spining method using a mixture of a ferroelectric material and an organic resin. When coating, the mixture is diluted with a solvent so that the ferroelectric film can be formed as a thin film. In advance of curring, the ferroelectric film is subjected to an electric field and its dipole moment is aligned and fixed in a direction perpendicular to the substrate. In virtue of the dipole moment, the liquid crystal device can be controlled by applying a voltage in one direction with a high stability.

Abstract: An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processsing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.

Abstract: A method for manufacturing a semiconductor photoelectric conversion device including forming a first impurity doped non-single crystal semiconductor layer of a first conductivity type on a substrate; forming an intrinsic non-single crystal semiconductor layer on the first semiconductor layer; forming a second impurity doped non-single crystal second conductivity layer type opposite to the first conductivity type on the intrinsic layer; irradiating the outer surface of the second impurity doped semiconductor layer with light energy of suitable wavelength which is effective to selectively crystallize the second impurity doped layer; irradiating the outer surface of the second impurity doped semiconductor layer with light energy of suitable wavelength which is effective to selectively crystallize the intrinsic semiconductor layer, whereby only the portion of the intrinsic semiconductor layer adjacent the impurity doped semiconductor layer is crystallized.

Abstract: A semiconductor photoelectric conversion device has a conductive substrate or a first conductive layer formed on a suitable substrate, a non-single-crystal semiconductor laminate member formed on the conductive substrate or first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN, or NIP junction, and a second conductive layer formed on the non-single-crystal semiconductor laminate member. The I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains oxygen, carbon, or phosphorus only in such a low concentration as 5.times.10.sup.18 atoms/cm.sup.3 or less, 4.times.10.sup.18 atoms/cm.sup.3 or less, or 5.times.10.sup.15 atoms/cm.sup.3 or less, respectively.

Abstract: A semiconductor photoelectric conversion device has a conductive substrate or a first conductive layer formed on a suitable substrate, a non-single-crystal semiconductor laminate member formed on the conductive substrate or first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN or NIP junction, and a second conductive layer formed on the non-single-crystal semiconductor laminate member. The I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains oxygen, carbon or phosphorus only in such a low concentration as 5.times.10.sup.18 atoms/cm.sup.3 or less, 4.times.10.sup.18 atoms/cm.sup.3 or less, or 5.times.10.sup.15 atoms/cm.sup.3 or less, respectively.

Abstract: A method of manufacturing a metal, insulator, semiconductor type field effect transistor (MISFET) is disclosed by which a device is obtained having greatly improved reliability and containing multi-layered wiring. Only three photo-mask processes are used and the requirement for precision mask aligning is eliminated.