Patents by Inventor Shun-Chao YANG

Shun-Chao YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ALUMINUM PLASTIC FILM FOR LITHIUM BATTERY AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20240154215
    Abstract: An aluminum plastic film for a lithium battery and a method for manufacturing the same are provided. The method includes steps as follows: preparing a polyolefin adhesive; coating the polyolefin adhesive onto one surface of an aluminum foil layer; disposing an inner polyolefin layer onto the polyolefin adhesive; and drying the polyolefin adhesive, so that a polyolefin adhesive layer is formed between the aluminum foil layer and the inner polyolefin layer. Components of the polyolefin adhesive include a modified polyolefin polymer and a hardener. The modified polyolefin polymer has a modified group, a structure of the modified group contains maleic anhydride, and a molecular weight of the modified polyolefin polymer ranges from 100,000 g/mol to 200,000 g/mol.
    Type: Application
    Filed: February 17, 2023
    Publication date: May 9, 2024
    Inventors: TE-CHAO LIAO, SHIOU-YEH SHENG, TENG-KO MA, CHING-YAO YUAN, Chao-Hsien Lin, CHIA-YU LIN, YUN-BIN HSI, HAN-YI LEE, SHUN-CHIEH YANG
  • Method for controlling temperature of furnace in semiconductor fabrication process
    Patent number: 10453713
    Abstract: A furnace for processing semiconductor wafers is provided. The furnace includes a tube having a closed upper end, an open lower end, and a sidewall connecting the upper end and the lower end. The furnace further includes a sealing lid removably connected to the lower end of the tube to define a reaction chamber. The furnace also includes an insulation cap connected to the sealing lid and positioned in the reaction chamber, and an opening is formed on a top surface of the insulation cap. In addition, the furnace includes a block member covering the opening and a wafer boat positioned on the top surface of the insulation cap.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: October 22, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuei-Hsiung Cho, Shun-Chao Yang, Ching-Wen Cheng
  • METHOD FOR CONTROLLING TEMPERATURE OF FURNACE IN SEMICONDUCTOR FABRICATION PROCESS
    Publication number: 20180151397
    Abstract: A furnace for processing semiconductor wafer is provided. The furnace includes a tube having a closed upper end, an open lower end, and a sidewall connecting the upper end and the lower end. The furnace further includes a sealing lid removably connected to the lower end of the tube to define a reaction chamber. The furnace also includes an insulation cap connected to the sealing lid and positioned in the reaction chamber, and an opening is formed on a top surface of the insulation cap. In addition, the furnace includes a block member covering the opening and a wafer boat positioned on the top surface of the insulation cap.
    Type: Application
    Filed: November 29, 2016
    Publication date: May 31, 2018
    Inventors: Kuei-Hsiung CHO, Shun-Chao YANG, Ching-Wen CHENG