Abstract: A slide rail assembly is provided and includes a first rail, a second rail movable with respect to the first rail, a working member, an operating member and a blocking member. When the second rail is located at an extended position with respect to the first rail and the working member is in a first state, the working member and a blocking feature of the first rail block each other for restraining the second rail from moving toward a first predetermined direction from the extended position. The blocking member is switchable between a blocking state and a non-blocking state for restraining the operating member from driving the working member to disengage from the first state or for allowing the operating member to drive the working member from the first state to a second state. Besides, a related slide rail kit is also provided.

Abstract: A slide rail assembly includes a first rail, a second rail, a slide assisting device, an elastic member and a working member. The second rail and the first rail are movable relative to each other. The elastic member is arranged on the second rail. During a process of the second rail being moved relative to the first rail along an opening direction, the working member is configured to contact the elastic member in an initial state in order to drive the slide assisting device to move along the opening direction to a predetermined position. When the slide assisting device is located at the predetermined position, the elastic member releases an elastic force through a predetermined space of the first rail, such that the elastic member is no longer in the initial state with the working member no longer contacting the elastic member.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a channel layer and an active layer over a substrate; forming a doped epitaxial layer over the active layer; patterning the doped epitaxial layer, the active layer, and the channel layer to form a fin structure comprising a doped epitaxial fin portion, an active fin portion below the doped epitaxial fin portion, and a channel fin portion below the active fin portion; removing the doped epitaxial fin portion; and forming a gate electrode at least partially extending along a sidewall of the fin structure to form a Schottky barrier between the gate electrode and the fin structure after removing the doped epitaxial fin portion.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a channel layer and an active layer over a substrate; forming a doped epitaxial layer over the active layer; patterning the doped epitaxial layer, the active layer, and the channel layer to form a fin structure comprising a doped epitaxial fin portion, an active fin portion below the doped epitaxial fin portion, and a channel fin portion below the active fin portion; removing the doped epitaxial fin portion; and forming a gate electrode at least partially extending along a sidewall of the fin structure to form a Schottky barrier between the gate electrode and the fin structure after removing the doped epitaxial fin portion.

Abstract: A semiconductor device includes a substrate, a channel layer, an active layer, and a gate electrode. The channel layer has a fin portion over the substrate. The active layer is over at least the fin portion of the channel layer. The active layer is configured to cause a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer. The gate electrode is in contact with a sidewall of the fin portion of the channel layer.

Abstract: A semiconductor device includes a substrate, a channel layer, an active layer, and a gate electrode. The channel layer has a fin portion over the substrate. The active layer is over at least the fin portion of the channel layer. The active layer is configured to cause a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer. The gate electrode is in contact with a sidewall of the fin portion of the channel layer.

Abstract: High speed serial link techniques are provided. A system applying the high speed serial link technique comprises a relay unit and an amplifier. The relay unit receives a first pair of differential signals provided by a high speed transmitter of a first device, and provides the amplifier with at least one signal that is generated based on the first pair of differential signals. The amplifier amplifies and converts the signal provided by the relay unit to a second pair of differential signals to be received by a high speed receiver of a second device.

Abstract: High speed serial link techniques are provided. A system applying the high speed serial link technique comprises a relay unit and an amplifier. The relay unit receives a first pair of differential signals provided by a high speed transmitter of a first device, and provides the amplifier with at least one signal that is generated based on the first pair of differential signals. The amplifier amplifies and converts the signal provided by the relay unit to a second pair of differential signals to be received by a high speed receiver of a second device.

Abstract: A multi-terminal capacitor includes a first capacitor plate, a second capacitor plate in parallel with the first capacitor plate, and a third capacitor plate in parallel with the first and second capacitor plates. The first, second and third capacitor plates are separated from each other by dielectric material, such that the first, second and third capacitor plates function as a first, second and third terminals, respectively, for capacitors formed therebetween.

Abstract: A power management system for a network device is provided. The network device is connected to a user device and includes a system module. The power management system includes a main power module, a detecting module, and a power-driving module. The main power module is for supplying power to the system module. The detecting module is for detecting a connection status between the network device and the user device, and reading the connection status. The power-driving module is for detecting a status of the main power module, and sending a control signal according to the status of the main power module and the connection status detected by the detecting module.