Abstract: A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device comprises a first electrical conductor, a first additional electrical conductor, a first active region, a second electrical conductor, a second additional electrical conductor, and a second active region. The first electrical conductor has a first width and extends along a first direction. The first additional electrical conductor has a second width and extends along the first direction. The second width is greater than the first width. The first active region extends along a second direction perpendicular to the first direction. The first active region overlaps the first electrical conductor and the first additional electrical conductor from a top view perspective. The second electrical conductor has the first width and extends along the first direction. The second additional electrical conductor has the second width and extends along the first direction.

Abstract: A serial communication bus system with dynamic address assignment and its control method are provided in this invention. The system allows the master device to directly assign device addresses to slave devices without the need for additional signals. This assignment is determined by whether the slave device returns a confirmation (ACK) signal, enabling the next address allocation. Slave devices can also obtain unique device addresses through this allocation process. Therefore, with this invention's serial communication bus system and control method featuring dynamic address assignment, existing I2C bus signals can dynamically assign device addresses, facilitating the identification of a plurality of slave devices and preventing address conflicts among them, thereby improving communication transmission.

Abstract: Methods and systems for dry cleaning a semiconductor processing reaction chamber are disclosed herein. In some embodiments, a method for cleaning a semiconductor processing reaction chamber includes: performing a plasma-assisted cleaning process to clean tube deposits formed on an inner surface of the deposition reaction chamber, the plasma-assisted cleaning process comprises: providing a first reactant gas to a remote plasma source chamber to generate a plasma, wherein the plasma comprising a fluorine-containing radical; and providing the plasma from the remote plasma source chamber to the deposition reaction chamber to clean the tube deposits, and performing a chemical cleaning process by providing a second reactant gas to the deposition reaction chamber after performing the plasma dry cleaning process.

Abstract: Methods and systems for dry cleaning a semiconductor processing reaction chamber are disclosed herein. In some embodiments, a method for cleaning a semiconductor processing reaction chamber includes: performing a plasma-assisted cleaning process to clean tube deposits formed on an inner surface of the deposition reaction chamber, the plasma-assisted cleaning process comprises: providing a first reactant gas to a remote plasma source chamber to generate a plasma, wherein the plasma comprising a fluorine-containing radical; and providing the plasma from the remote plasma source chamber to the deposition reaction chamber to clean the tube deposits, and performing a chemical cleaning process by providing a second reactant gas to the deposition reaction chamber after performing the plasma dry cleaning process.

Abstract: A wafer boat includes a base, a plurality of support rods and a plurality of cantilever arms. The support rods are carried by the base. The support rods are disposed around a space above the base. The cantilever arms are carried by the support rods. At least two of the cantilever arms carried by at least one of the support rods are vertically spaced apart to define at least one slot for a wafer.