Abstract: Lithography methods and corresponding lithography apparatuses are disclosed herein for improving throughput of lithography exposure processes. An exemplary lithography method includes generating a plurality of target material droplets and generating radiation from the plurality of target material droplets based on a dose margin to expose a wafer. The dose margin indicates how many of the plurality of target material droplets are reserved for dose control. In some implementations, the plurality of target material droplets are grouped into a plurality of bursts, and the lithography method further includes performing an inter-compensation operation that designates an excitation state of target material droplets in one of the plurality of bursts to compensate for an energy characteristic of another one of the plurality of bursts.

Abstract: Lithography methods and corresponding lithography apparatuses are disclosed herein for improving throughput of lithography exposure processes. An exemplary lithography method includes generating a plurality of target material droplets and generating radiation from the plurality of target material droplets based on a dose margin to expose a wafer. The dose margin indicates how many of the plurality of target material droplets are reserved for dose control. In some implementations, the plurality of target material droplets are grouped into a plurality of bursts, and the lithography method further includes performing an inter-compensation operation that designates an excitation state of target material droplets in one of the plurality of bursts to compensate for an energy characteristic of another one of the plurality of bursts.

Abstract: Lithography methods and corresponding lithography apparatuses are disclosed herein for improving throughput of lithography exposure processes. An exemplary lithography method includes generating a plurality of target material droplets and generating radiation from the plurality of target material droplets based on a dose margin to expose a wafer. The dose margin indicates how many of the plurality of target material droplets are reserved for dose control. In some implementations, the plurality of target material droplets are grouped into a plurality of bursts, and the lithography method further includes performing an inter-compensation operation that designates an excitation state of target material droplets in one of the plurality of bursts to compensate for an energy characteristic of another one of the plurality of bursts.

Abstract: Lithography methods and corresponding lithography apparatuses are disclosed herein for improving throughput of lithography exposure processes. An exemplary lithography method includes generating a plurality of target material droplets and generating radiation from the plurality of target material droplets based on a dose margin to expose a wafer. The dose margin indicates how many of the plurality of target material droplets are reserved for dose control. In some implementations, the plurality of target material droplets are grouped into a plurality of bursts, and the lithography method further includes performing an inter-compensation operation that designates an excitation state of target material droplets in one of the plurality of bursts to compensate for an energy characteristic of another one of the plurality of bursts.

Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography process. The process includes loading a wafer to an EUV lithography system having an EUV source; determining a dose margin according to an exposure dosage and a plasma condition of the EUV source; and performing a lithography exposing process to the wafer by EUV light from the EUV source, using the exposure dosage and the dose margin.

Abstract: An extreme ultraviolet (EUV) radiation source module includes a target droplet generator, a first laser source, and a second laser source. The target droplet generator is configured to generate a plurality of target droplets. The first laser source is configured to generate a plurality of first laser pulses that heat the target droplets at respective excitation positions thereby generating a plurality of target plumes. At least one of the target droplets is heated at an excitation position different from that of other target droplets. The second laser source is configured to generate a plurality of second laser pulses that heat the target plumes thereby generating plasma emitting EUV radiation.

Abstract: The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask.

Abstract: An extreme ultraviolet (EUV) radiation source module includes a target droplet generator, a first laser source, and a second laser source. The target droplet generator is configured to generate a plurality of target droplets. The first laser source is configured to generate a plurality of first laser pulses that heat the target droplets at respective excitation positions thereby generating a plurality of target plumes. At least one of the target droplets is heated at an excitation position different from that of other target droplets. The second laser source is configured to generate a plurality of second laser pulses that heat the target plumes thereby generating plasma emitting EUV radiation.

Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography process. The process includes loading a wafer to an EUV lithography system having an EUV source; determining a dose margin according to an exposure dosage and a plasma condition of the EUV source; and performing a lithography exposing process to the wafer by EUV light from the EUV source, using the exposure dosage and the dose margin.

Abstract: The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask.

Abstract: A method of production of alignment marks uses a self-aligned double patterning process. An alignment mark pattern is provided with first and second sub-segmented elements. After selecting the dipolar illumination orientation, dipole-X is used to illuminate the pattern and to image the first elements on the wafer, but not the second elements. Alternatively, dipole-Y is used to illuminate the pattern and to image the second elements on the wafer, but not the first elements. In either case, self-aligned double patterning processing may then be performed to produce product-like alignment marks with high contrast and wafer quality (WQ). Subsequently the X and Y alignment marks thus produced are used for the step of alignment in a lithographic process.