Abstract: A method, system, and computer program product for circuit design automation. The method identifies a set of circuit components for a proposed circuit design. A subset of circuit components is selected to generate an initial topology for the proposed circuit design. A set of subsequent topologies are iteratively generated by a heuristic search algorithm based on the subset of circuit components and the initial topology. A set of valid topologies of the set of subsequent topologies are determined by a circuit simulator based on the subset of circuit components and a set of connections within the set of subsequent topologies. The method generates the proposed circuit design from the set of valid topologies.

Abstract: A thin film transistor includes a semiconductor layer, a first gate electrode disposed at one side of the semiconductor layer, a first gate insulating layer disposed between the first gate electrode and the semiconductor layer, a second gate electrode and a third gate electrode disposed at another side of the semiconductor layer, and a second gate insulating layer. The second gate electrode is separated from the third gate electrode. The second gate insulating layer is disposed between the second and third gate electrodes and the semiconductor layer. An orthogonal projection of the first gate electrode on the semiconductor layer is partially overlapped with an orthogonal projection of the second gate electrode on the semiconductor layer. The orthogonal projection of the first gate electrode on the semiconductor layer is partially overlapped with an orthogonal projection of the third gate electrode on the semiconductor layer.

Abstract: A semiconductor device includes a substrate, a first thin-film transistor, and a second thin-film transistor. The first and second thin-film transistors are disposed on the substrate. The first thin-film transistor includes stacked first and second metal oxide layers. An oxygen concentration of the first metal oxide layer is less than an oxygen concentration of the second metal oxide layer, and a thickness of the second metal oxide layer is less than a thickness of the first metal oxide layer. A two-dimensional electron gas is located at an interface between the first and second metal oxide layers. The second thin-film transistor is electrically connected to the first thin-film transistor. The second thin-film transistor includes a third metal oxide layer. The second and third metal oxide layers belong to a same patterned layer.

Abstract: A semiconductor device, including a substrate, a semiconductor structure, a first gate dielectric layer, a first gate, a source, and a drain, is provided. The semiconductor structure includes a first metal oxide layer and a second metal oxide layer. The second metal oxide layer covers a top surface and a sidewall of the first metal oxide layer. The second metal oxide layer has a stepped structure at the sidewall of the first metal oxide layer. A carrier mobility of the first metal oxide layer is greater than a carrier mobility of a channel region of the second metal oxide layer. A thickness of the second metal oxide layer is greater than or equal to a thickness of the first metal oxide layer. A difference between a width of the first gate and a width of the first metal oxide layer is less than 0.5 ?m.

Abstract: A semiconductor device, including a first gate, a second gate, a third gate, a first semiconductor layer, a second semiconductor layer, a source, and a drain, is provided. The first semiconductor layer is located between the first gate and the second gate. The second gate is located between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is located between the second gate and the third gate. The source is electrically connected to the first semiconductor layer and the second semiconductor layer. The drain is electrically connected to the first semiconductor layer and the second semiconductor layer.

Abstract: An active device substrate includes a substrate, a first semiconductor device and a second semiconductor device. The first semiconductor device and the second semiconductor device are disposed above the substrate. The first semiconductor device includes a first gate, a first semiconductor layer, a first source and a first drain. A first gate dielectric structure is sandwiched between the first gate and the first semiconductor layer. The first gate dielectric structure includes a stack of a portion of a gate dielectric layer and a portion of a ferroelectric material layer. The second semiconductor device is electrically connected to the first semiconductor device and includes a second gate, a second semiconductor layer, a second source and a second drain. Another part of the ferroelectric material layer is sandwiched between the second gate and the second semiconductor layer.

Abstract: A thin film transistor includes a semiconductor layer, a first gate electrode disposed at one side of the semiconductor layer, a first gate insulating layer disposed between the first gate electrode and the semiconductor layer, a second gate electrode and a third gate electrode disposed at another side of the semiconductor layer, and a second gate insulating layer. The second gate electrode is separated from the third gate electrode. The second gate insulating layer is disposed between the second and third gate electrodes and the semiconductor layer. An orthogonal projection of the first gate electrode on the semiconductor layer is partially overlapped with an orthogonal projection of the second gate electrode on the semiconductor layer. The orthogonal projection of the first gate electrode on the semiconductor layer is partially overlapped with an orthogonal projection of the third gate electrode on the semiconductor layer.

Abstract: An image processing method includes: detecting repetition numbers of each image frame of an input image frame sequence, wherein the input image frame sequence includes sequentially inputted at least one first image frame and at least one second image frame, and image data of each first image frame is different from image data of each second image frame; determining a first lookup table according to a first repetition numbers of the at least one first image frame, wherein the first lookup table indicates a plurality of sets of compensation calculations; and using a first set of compensation calculations in the sets of compensation calculations to process the at least one first image frame according to a second repetition numbers of the at least one second image frame.

Abstract: An active element and a manufacturing method thereof are provided. The active element includes a substrate, a switching bottom gate and a driving bottom gate disposed on the substrate, a first gate insulating layer disposed on the substrate and covering the switching bottom gate and the driving bottom gate, a switching channel and a driving channel disposed on the first gate insulating layer, a second gate insulating layer disposed on the first gate insulating layer and covering the switching channel and the driving channel, and a switching top gate and a driving top gate disposed on the second gate insulating layer. The driving channel has a low potential end electrically connected to the driving bottom gate. A thickness of the second gate insulating layer is greater than a thickness of the first gate insulating layer. The switching top gate is electrically connected to the switching bottom gate.

Abstract: An image acquisition device and image processing method for an agricultural harvesting operation machine. The agricultural harvesting operation machine comprises a body and an image acquisition device; the image acquisition device comprises an image capturing component and a communication machine; the image acquisition device is mounted on the body; the communication machine is communicatably connected to the image capturing component so as to obtain acquired image information from the image capturing component, thereby assisting in adjusting the working position and operation speed of the body. Also provided is an image processing method. Information required by harvesting operation is taken into full consideration, images of the position of an agricultural harvesting operation machine are acquired, and multiple acquired images are efficiently processed.

Abstract: An intelligent harvester with instantaneous stop functions includes a harvester body, a detecting system for detecting a human body within an area range on a traveling route of the harvester body, and a brake system arranged on the harvester body and operatively connected to the detecting system. When the detecting system detects a human body present within the area range on a traveling path of the harvester body, the brake system controls the harvester body to brake.

Abstract: An intelligent system and a method for coordinating harvester and logistics vehicle are illustrated. The intelligent system comprises a harvester terminal and a logistics vehicle terminal. The harvester terminal comprises a repository monitoring module and a control module, wherein the repository monitoring module monitors storage information of a storage bin of the harvester. The control module receives the storage information from the repository monitoring module, and determines whether the storage location of the storage bin of the harvester reaches a preset location. The harvester terminal and the logistics vehicle terminal are communicatively connected. When the storage location of the storage bin of the harvester reaches the preset location, the control module sends a transport instruction to the logistics vehicle terminal to control the logistics vehicle to transport grain, thereby achieving intelligent coordination between the harvester and the logistics vehicle.

Abstract: A method for planning traveling paths for multiple automatic harvesters, includes performing detection and forming basic agricultural land information by a detection device and receiving the basic agricultural land information at a path planning module. The path planning module sets quantity setting information and divides harvesting areas of the multiple automatic harvesters and travel paths thereof.

Abstract: A traveling path planning method of an automatic harvester includes steps of (a) detecting and forming, by a detection device, a basic farmland information; and (b) receiving and analyzing, by a path planning device, the basic farmland information, and planning a path for the automatic harvester to travel.

Abstract: An automatic driving system for grain processing, and an automatic driving method and a path planning method is illustrated. The automatic driving system for grain processing comprises a grain processing host, an image processing system, a path planning system, and an image acquisition device. The image processing system is arranged on the grain processing host and acquires at least one image of farmland surrounding the grain processing host. The image processing system identifies, based on an image segmentation and identification method, an area in the image; and the path planning system plans, based on the area identified by the image processing system, at least one driving planning path. The grain processing host automatically controls driving according to the driving planning path planned by the path planning system.

Abstract: An automatic driving system for grain processing, an automatic driving method, and an automatic identification method is illustrated. The automatic driving system includes a grain processing host, an image acquiring device, and an image processing system. The image acquiring device is provided in the grain processing host. The image acquiring device acquires at least one image around the grain processing host. The image processing system identifies areas in the image by utilizing an image segmentation and identification technique on the basis of the image acquired by the image acquiring device. The grain processing host automatedly controls driving based on the areas identified by the image processing system.

Abstract: A telescoping wheel assembly includes a base body, a wheel set and an elastic member. The base body includes a receiving groove. The wheel set is connected to the receiving groove and selectively positioned at an outward position or an inward position relative to the receiving groove. The wheel set includes a wheel axle and a wheel body. The wheel body is connected to an outside of the wheel axle. The elastic member is disposed in the receiving groove and abutted against the base body and the wheel set. When the wheel set is positioned at the outward position, the elastic member provides a buffering elastic force to the wheel set. When the wheel set is positioned at the inward position, the elastic member provides a pushing elastic force to the wheel set.

Abstract: A telescoping wheel assembly includes a base body, a wheel set and an elastic member. The base body includes a receiving groove. The wheel set is connected to the receiving groove and selectively positioned at an outward position or an inward position relative to the receiving groove. The wheel set includes a wheel axle and a wheel body. The wheel body is connected to an outside of the wheel axle. The elastic member is disposed in the receiving groove and abutted against the base body and the wheel set. When the wheel set is positioned at the outward position, the elastic member provides a buffering elastic force to the wheel set. When the wheel set is positioned at the inward position, the elastic member provides a pushing elastic force to the wheel set.

Abstract: A backlight module includes a light-guiding plate, a back-light source disposed at a side of the light-guiding plate, and a frame structure disposed surrounding the light-guiding plate. The frame structure includes a border component, at least one first convex, and at least one second convex. The border component includes at least one first border and at least one second border. The first border and the second border are adjacent to each other and distributed along a first direction and a second direction respectively. The first convex protrudes from the inner surface of the first border and extends inward along the second direction. The second convex protrudes from the inner surface of the second border and extends inward along the first direction. The first direction is vertical to the second direction, and the top of the vertical height of the first convex is lower than that of the second convex.

Abstract: A memory structure includes a control unit and a memory unit electrically connected to the control unit. The control unit includes a source and a drain; an active layer in contact with a portion of the source and a portion of the drain; a gate layer; and a gate insulation layer disposed between the active layer and the gate layer. The memory unit includes a bottom electrode layer; a top electrode layer; and a resistive switching layer interposed between the bottom electrode layer and the top electrode layer, which the resistive switching layer and the active layer are formed of aluminum zinc tin oxide (AZTO).