Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.

Abstract: A circuit board assembly is applied to the field of electronic communications technologies to resolve a prior-art heat dissipation problem of a circuit board. The circuit board assembly combines, on a second circuit board, low-speed signals transmitted between a plurality of I/O modules and an IC chip, and then transmits the combined low-speed signals to the IC chip by using a low-speed cable. A low-speed signal sent by the IC chip to the plurality of I/O modules is extended to a plurality of low-speed signals on the second circuit board, and then the plurality of low-speed signals are separately sent to the plurality of I/O modules. This may be applied to a scenario in which a relatively large quantity of electronic components need to be disposed on a circuit board.

Abstract: A circuit board assembly is applied to the field of electronic communications technologies to resolve a prior-art heat dissipation problem of a circuit board. The circuit board assembly combines, on a second circuit board, low-speed signals transmitted between a plurality of I/O modules and an IC chip, and then transmits the combined low-speed signals to the IC chip by using a low-speed cable. A low-speed signal sent by the IC chip to the plurality of I/O modules is extended to a plurality of low-speed signals on the second circuit board, and then the plurality of low-speed signals are separately sent to the plurality of I/O modules. This may be applied to a scenario in which a relatively large quantity of electronic components need to be disposed on a circuit board.

Abstract: There is disclosed in an example, an endpoint apparatus for an interconnect, comprising: a mechanical and electrical interface to the interconnect; and one or more logic elements comprising an interface vector engine to: receive a first scalar transaction for the interface; determine that the first scalar transaction meets a criterion for vectorization; receive a second scalar transaction for the interface; determine that the second transaction meets the criterion for vectorization; vectorize the first scalar transaction and second scalar transaction into a vector transaction; and send the vector transaction via the electrical interface.

Abstract: A memory structure including a substrate, a first transistor, a second transistor, and a trench capacitor is provided. The trench capacitor is disposed in the substrate and is connected between the first transistor and the second transistor.

Abstract: A circuit board assembly is applied to the field of electronic communications technologies to resolve a prior-art heat dissipation problem of a circuit board. The circuit board assembly combines, on a second circuit board, low-speed signals transmitted between a plurality of I/O modules and an IC chip, and then transmits the combined low-speed signals to the IC chip by using a low-speed cable. A low-speed signal sent by the IC chip to the plurality of I/O modules is extended to a plurality of low-speed signals on the second circuit board, and then the plurality of low-speed signals are separately sent to the plurality of I/O modules. This may be applied to a scenario in which a relatively large quantity of electronic components need to be disposed on a circuit board.

Abstract: A memory structure including a substrate, a first transistor, a second transistor, and a trench capacitor is provided. The trench capacitor is disposed in the substrate and is connected between the first transistor and the second transistor.

Abstract: There is disclosed in an example, an endpoint apparatus for an interconnect, comprising: a mechanical and electrical interface to the interconnect; and one or more logic elements comprising an interface vector engine to: receive a first scalar transaction for the interface; determine that the first scalar transaction meets a criterion for vectorization; receive a second scalar transaction for the interface; determine that the second transaction meets the criterion for vectorization; vectorize the first scalar transaction and second scalar transaction into a vector transaction; and send the vector transaction via the electrical interface

Abstract: A memory structure including a substrate, a first transistor, a second transistor, and a trench capacitor is provided. The trench capacitor is disposed in the substrate and is connected between the first transistor and the second transistor.

Abstract: Techniques for modifying a transmission rate of a device having a plurality of transmission rate options are described herein. The techniques include a method comprising receiving data from a sensor indicating movement of an electronic device, the electronic device having a plurality of transmission rate options. Fail ratio metrics are gathered. The fail ratio metrics indicate a ratio of failed transmissions to successful transmissions for rate option during device movement. The method includes determining whether a given rate option has a fail ratio above a predetermined threshold; and, if so, disabling the given rate option while the device is moving.

Abstract: Techniques for modifying a transmission rate of a device having a plurality of transmission rate options are described herein. The techniques include a method comprising receiving data from a sensor indicating movement of an electronic device, the electronic device having a plurality of transmission rate options. Fail ratio metrics are gathered. The fail ratio metrics indicate a ratio of failed transmissions to successful transmissions for rate option during device movement. The method includes determining whether a given rate option has a fail ratio above a predetermined threshold; and, if so, disabling the given rate option while the device is moving.

Abstract: A method for manufacturing a semiconductor structure having a via hole is provided. The method includes steps of providing a base, forming a pad on the base, forming a device on the pad, forming a dielectric layer over the device and the base, executing a planarization process with etch back, and etching the dielectric layer to form the via hole. The manufactured semiconductor structure has a dielectric layer having therein the via hole, a device under the dielectrc layer, and a pad under the device for raising the device. The method and structure can prevent a residue due to planarization process from being remained between the dielectric layer and the device.