Patents by Inventor Shun Jackson Wu

Shun Jackson Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7578889
    Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: August 25, 2009
    Assignee: Lam Research Corporation
    Inventors: Hong Shih, Yaobo Yin, Shun Jackson Wu, Armen Avoyan, John E. Daugherty, Linda Jiang
  • Publication number: 20080236620
    Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.
    Type: Application
    Filed: March 30, 2007
    Publication date: October 2, 2008
    Applicant: Lam Research Corporation
    Inventors: Hong Shih, Yaobo Yin, Shun Jackson Wu, Armen Avoyan, John E. Daugherty, Linda Jiang
  • Publication number: 20080213496
    Abstract: Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.
    Type: Application
    Filed: August 2, 2007
    Publication date: September 4, 2008
    Inventors: Jennifer Y. Sun, Shun Jackson Wu, Senh Thach, Ananda Kumar, Robert W. Wu, Hong Wang, Yixing Lin, Clifford C. Stow, Jim Dempster, Li Xu, Kenneth S. Collins, Ren-Guan Duan, Thomas Graves, Xiaoming He, Jie Yuan
  • Patent number: 7055732
    Abstract: We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.
    Type: Grant
    Filed: August 28, 2003
    Date of Patent: June 6, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Senh Thach, Jennifer Y. Sun, Shun Jackson Wu, Yixing Lin, Clifford C. Stow
  • Patent number: 7048814
    Abstract: We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film can be controlled by maintaining the content of mobile impurities within a specific range and controlling the particulate size and distribution of the mobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330° C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.
    Type: Grant
    Filed: February 8, 2002
    Date of Patent: May 23, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Yixing Lin, Brian T. West, Hong Wang, Shun Jackson Wu, Jennifer Y Sun, Clifford C. Stow, Senh Thach
  • Patent number: 7033447
    Abstract: We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film, can be controlled by maintaining the content of mobile and nonmobile impurities within a specific range and controlling the particulate size and distribution of the mobile and nonmobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330° C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.
    Type: Grant
    Filed: May 3, 2002
    Date of Patent: April 25, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Yixing Lin, Brian T West, Shun Jackson Wu, Clifford C Stow, Senh Thach, Hong Wang, Jennifer Y Sun
  • Patent number: 6776873
    Abstract: To further enhance the chamber material performance of anodized aluminum alloy materials against fluorine and oxygen plasma attack, a ceramic-based surface coating, high purity yttrium oxide coating, is provided on the anodized aluminum alloy parts.
    Type: Grant
    Filed: February 14, 2002
    Date of Patent: August 17, 2004
    Inventors: Jennifer Y Sun, Shun Jackson Wu, Senh Thach, Ananda H Kumar, Robert W Wu, Hong Wang, Yixing Lin, Clifford C Stow
  • Publication number: 20040041004
    Abstract: We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.
    Type: Application
    Filed: August 28, 2003
    Publication date: March 4, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Senh Thach, Jennifer Y. Sun, Shun Jackson Wu, Yixing Lin, Clifford C. Stow
  • Patent number: 6659331
    Abstract: We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.
    Type: Grant
    Filed: February 26, 2002
    Date of Patent: December 9, 2003
    Assignee: Applied Materials, Inc
    Inventors: Senh Thach, Jennifer Y. Sun, Shun Jackson Wu, Yixing Lin, Clifford C. Stow
  • Publication number: 20030205479
    Abstract: We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film, can be controlled by maintaining the content of mobile and nonmobile impurities within a specific range and controlling the particulate size and distribution of the mobile and nonmobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330° C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.
    Type: Application
    Filed: May 3, 2002
    Publication date: November 6, 2003
    Inventors: Yixing Lin, Brian T. West, Shun Jackson Wu, Clifford C. Stow, Senh Thach, Hong Wang, Jennifer Y. Sun
  • Publication number: 20030160085
    Abstract: We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.
    Type: Application
    Filed: February 26, 2002
    Publication date: August 28, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Senh Thach, Jennifer Y. Sun, Shun Jackson Wu, Yixing Lin, Clifford C. Stow
  • Publication number: 20030150530
    Abstract: We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film can be controlled by maintaining the content of mobile impurities within a specific range and controlling the particulate size and distribution of the mobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330° C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.
    Type: Application
    Filed: February 8, 2002
    Publication date: August 14, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Yixing Lin, Brian T. West, Hong Wang, Shun Jackson Wu, Jennifer Y. Sun, Clifford C. Stow, Senh Thach
  • Patent number: 6175485
    Abstract: The present invention provides an electrostatic chuck having a dielectric layer with improved porosity and electrical properties, and a method for fabricating the dielectric layer and applying the layer to a pedestal to form a portion of an electrostatic chuck. The dielectric layer is formed by a detonation gun process which includes igniting a fuel gas mixture to form a detonation wave and propelling aluminum oxide powder onto the pedestal at high speeds. The dielectric layer has a porosity of less than 1 percent of its total volume, which improves the electrical properties of the chuck, such as its dielectric strength and the dielectric constant. In addition, the low porosity decreases the adsorption of moisture and other gases into the dielectric layer, which further enhances the electrical properties of the chuck.
    Type: Grant
    Filed: July 19, 1996
    Date of Patent: January 16, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Padmanabhan Krishnaraj, Brian Lue, Ramkishan Rao Lingampalli, Shun Jackson Wu