Abstract: A positive resist composition is provided comprising (A) an acid generator in the form of a sulfonium salt consisting of a fluorine-containing sulfonate anion and a fluorine-containing sulfonium cation, (B) a quencher in the form of a sulfonium salt containing at least two fluorine atoms in its cation or containing at least 5 fluorine atoms in its anion and cation, and (C) a base polymer comprising repeat units (a1) having a carboxy group whose hydrogen is substituted by an acid labile group and/or repeat units (a2) having a phenolic hydroxy group whose hydrogen is substituted by an acid labile group. The resist composition exhibits a high sensitivity, high resolution and improved LWR or CDU.

Abstract: The resist composition exhibits excellent sensitivity, resolution, and LWR when processed by photolithography using high-energy radiation, typically EB and EUV lithography, and a patterning process using the same. The resist composition comprises a specific tin compound and an organic solvent exhibits excellent sensitivity, resolution, and LWR when processed by photolithography using high-energy radiation.

Abstract: The negative-tone molecular resist composition comprises an onium salt containing a cation having a cyclic ether site and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR when processed by photolithography using high-energy radiation. The molecular resist composition of the invention meets both high sensitivity and high resolution and is improved in LWR when processed by photolithography using high-energy radiation, especially EB or EUV lithography. The resist composition is quite useful for precise micropatterning.

Abstract: The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol % or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film.

Abstract: A resist composition is provided that comprises a hypervalent iodine compound having the formula (1), a carboxy group-containing polymer, and a solvent. In formula (1), n is an integer of 0 to 5, R1 and R2 are each independently halogen or a C1-C10 hydrocarbyl group which may contain a heteroatom, R1 and R2 may bond together to form a ring with the carbon atoms to which they are attached and the intervenient atoms. R3 is halogen or a C1-C40 hydrocarbyl group which may contain a heteroatom.

Abstract: A compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film used in manufacturing a semiconductor, where the compound for forming a metal-containing film is represented by the following general formula (M-1) or (M-2). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; a patterning process in which the composition is used as a resist underlayer film material; a patterning process in which the composition is used as a resist material; and a semiconductor photoresist material containing the composition.

Abstract: A molecular resist composition and a pattern forming process. A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography. The molecular resist composition does not contain a base polymer. The molecular resist composition comprising a sulfonium salt having a cation of specific partial structure has a high sensitivity and forms a resist film with improved resolution and LWR, so that the resist composition is quite useful for precise micropatterning.

Abstract: A resist composition comprising a hypervalent iodine compound having at least two acyloxy groups, a carboxylic acid, and a solvent is provided. When processed by lithography using high-energy radiation, the resist composition exhibits a high sensitivity and resolution.

Abstract: A positive resist composition is provided comprising a base polymer end-capped with an ammonium salt of an iodized acid, linked to a sulfide group. Because of controlled acid diffusion, a resist film of the composition forms a pattern of good profile with a high resolution and reduced edge roughness or dimensional variation.

Abstract: A positive resist composition is provided comprising a base polymer end-capped with a salt consisting of an ammonium cation linked to a sulfide group and a fluorinated anion. Because of controlled acid diffusion, a resist film of the composition forms a pattern of good profile with a high resolution and reduced edge roughness or dimensional variation.

Abstract: A positive resist composition is provided comprising a base polymer end-capped with a sulfonium salt containing a carboxylate anion having a sulfide group linked thereto. Because of controlled acid diffusion, a resist film of the composition forms a pattern of good profile with a high resolution and reduced edge roughness or dimensional variation.

Abstract: A molecular resist composition comprising a sulfonium salt having formula (1) or (2) and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography.

Abstract: Provided is an imaging apparatus including a mode setting unit that sets a diaphragm driving mode out of a plurality of diaphragm driving modes including a first diaphragm driving mode and a second diaphragm driving mode in which diaphragm driving is more limited than in the first diaphragm driving mode, and a diaphragm control unit that controls diaphragm driving in accordance with brightness of an imaging target in a case where the mode setting unit sets the second diaphragm driving mode.

Abstract: The present technique relates to a lens apparatus, a driving method, an image capturing apparatus, and an image capturing system that allow reduction of possible noise in a captured image caused by a magnetic field generated when an actuator of the lens apparatus is driven, without any change in image capturing processing of the image capturing apparatus. A lens apparatus is enabled to be mounted on an image capturing apparatus and includes an actuator, a communication section configured to receive, from the image capturing apparatus, drive frequency information used to set a drive frequency for the actuator, a control section configured to set the drive frequency for the actuator on the basis of the drive frequency information, and a driving section configured to drive the actuator at the drive frequency set. The present technique can be applied to, for example, a lens apparatus mounted on a single-lens reflex camera.

Abstract: A positive resist composition is provided comprising (A) an acid generator in the form of a sulfonium salt consisting of a fluorine-containing sulfonate anion and a fluorine-containing sulfonium cation, (B) a quencher in the form of a sulfonium salt containing at least two fluorine atoms in its cation or containing at least 5 fluorine atoms in its anion and cation, and (C) a base polymer comprising repeat units (a1) having a carboxy group whose hydrogen is substituted by an acid labile group and/or repeat units (a2) having a phenolic hydroxy group whose hydrogen is substituted by an acid labile group. The resist composition exhibits a high sensitivity, high resolution and improved LWR or CDU.

Abstract: A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography.

Abstract: There is provided an imaging apparatus (60) including: a mode setting unit (72) configured to set a diaphragm driving mode out of a plurality of diaphragm driving modes including a first diaphragm driving mode and a second diaphragm driving mode in which diaphragm driving is more limited than in the first diaphragm driving mode; and a diaphragm control unit (72) configured to control diaphragm driving in accordance with brightness of an imaging target in a case where the mode setting unit sets the second diaphragm driving mode.

Abstract: The present technique relates to a lens apparatus, a driving method, an image capturing apparatus, and an image capturing system that allow reduction of possible noise in a captured image caused by a magnetic field generated when an actuator of the lens apparatus is driven, without any change in image capturing processing of the image capturing apparatus. A lens apparatus is enabled to be mounted on an image capturing apparatus and includes an actuator, a communication section configured to receive, from the image capturing apparatus, drive frequency information used to set a drive frequency for the actuator, a control section configured to set the drive frequency for the actuator on the basis of the drive frequency information, and a driving section configured to drive the actuator at the drive frequency set. The present technique can be applied to, for example, a lens apparatus mounted on a single-lens reflex camera.