Patents by Inventor Shun KITAHAMA
Shun KITAHAMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240097075Abstract: A method for manufacturing a light-emitting element includes: preparing a semiconductor structure body that includes: an n-side layer, a p-side layer, and an active layer positioned between the n-side layer and the p-side layer, where the n-side layer includes a plurality of first regions arranged in a first direction in a top view, the first regions exposed from the active layer and the p-side layer; forming a first insulating film on the p-side layer, between the first regions; forming a second insulating film to continuously cover the first regions, the p-side layer, and the first insulating film; forming an n-side opening in the second insulating film by removing the second insulating film on the first regions and on the first insulating film; and forming an n-side electrode in the n-side opening, the n-side electrode contacting the first regions and the first insulating film.Type: ApplicationFiled: September 11, 2023Publication date: March 21, 2024Applicant: NICHIA CORPORATIONInventor: Shun KITAHAMA
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Publication number: 20240079517Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.Type: ApplicationFiled: November 13, 2023Publication date: March 7, 2024Applicant: NICHIA CORPORATIONInventors: Shun KITAHAMA, Yoshiki INOUE, Kazuhiro NAGAMINE, Junya NARITA
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Patent number: 11855238Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.Type: GrantFiled: June 3, 2021Date of Patent: December 26, 2023Assignee: NICHIA CORPORATIONInventors: Shun Kitahama, Yoshiki Inoue, Kazuhiro Nagamine, Junya Narita
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Publication number: 20230343892Abstract: A method for manufacturing a light-emitting element includes: forming a semiconductor structure comprising a light-emitting layer on a first surface of a substrate, wherein the first surface comprising a plurality of protrusions and a second region; dividing the semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region of the substrate, wherein the second region is exposed from under the semiconductor structure in the exposed region; bonding a light-transmitting body to a second surface of the substrate that is opposite the first surface so as to form a bonded body, wherein the light-transmitting body comprises a fluorescer; forming a plurality of modified regions along the exposed region; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.Type: ApplicationFiled: June 28, 2023Publication date: October 26, 2023Applicant: NICHIA CORPORATIONInventors: Yoshiki INOUE, Shun KITAHAMA, Yoshiyuki AIHARA, Yoshiki MATSUSHITA, Keisuke HIGASHITANI
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Patent number: 11735686Abstract: A method for manufacturing a light-emitting element includes dividing a semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region, a first surface being exposed from under the semiconductor structure in the exposed region; etching protrusions formed in the exposed region; bonding a light-transmitting body to a second surface so as to form a bonded body; forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from the first surface side; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.Type: GrantFiled: December 7, 2020Date of Patent: August 22, 2023Assignee: NICHIA CORPORATIONInventors: Yoshiki Inoue, Shun Kitahama, Yoshiyuki Aihara, Yoshiki Matsushita, Keisuke Higashitani
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Patent number: 11276801Abstract: A light-emitting element includes: a semiconductor stacked body; an insulating film located on a p-type semiconductor layer; a p-side electrode located on the insulating film, the p-side electrode comprising a pad portion and an extension portion, the extension portion being continuous with the pad portion in a first direction; a light-transmissive conductive film located on the p-type semiconductor layer and on the insulating film, the light-transmissive conductive film having an opening that is continuous along the extension portion on the insulating film; and a reflective film located between the insulating film and the p-side electrode in the opening. The opening includes a first opening and a second opening. In the second direction, the light-transmissive conductive film is electrically connected to the extension portion of the p-side electrode at a portion adjacent to a region where the first opening is located.Type: GrantFiled: March 4, 2020Date of Patent: March 15, 2022Assignee: NICHIA CORPORATIONInventor: Shun Kitahama
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Publication number: 20220077365Abstract: A light-emitting element includes: a semiconductor layered structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer located between the first semiconductor layer and the second semiconductor layer; a reflective portion including an insulative first layer located on the first semiconductor layer, a second layer made of a metal material located on the first layer, and a third layer located on the second layer; an insulative layer covering the reflective portion; a light-transmissive conductive layer located on the insulative layer and on the first semiconductor layer; a first electrode located on a portion of the light-transmissive conductive layer that is above the reflective portion; and a second electrode located on the second semiconductor layer.Type: ApplicationFiled: September 3, 2021Publication date: March 10, 2022Applicant: NICHIA CORPORATIONInventors: Shun KITAHAMA, Yusuke MINATO
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Publication number: 20210296526Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.Type: ApplicationFiled: June 3, 2021Publication date: September 23, 2021Applicant: NICHIA CORPORATIONInventors: Shun KITAHAMA, Yoshiki INOUE, Kazuhiro NAGAMINE, Junya NARITA
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Patent number: 11063183Abstract: A light emitting element includes a semiconductor layer which is in a planar shape of a polygon at least of a pentagon, a second electrode provided on the semiconductor layer, and a first electrode provided on the semiconductor layer and having a first pad portion, a first extension portion that extends from the first pad portion along an imaginary circle to which the first pad portion is tangent on the inside and whose center is at the same location as center of gravity of the polygon shape, and a second extension portion that extends along the imaginary circle from the first pad portion on the opposite side from the first extension portion.Type: GrantFiled: February 17, 2016Date of Patent: July 13, 2021Assignee: NICHIA CORPORATIONInventors: Keiji Emura, Shun Kitahama, Yasuo Miyoshi
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Patent number: 11056612Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer, wherein a resistance of a peripheral portion of the p-side nitride semiconductor layer is higher than a resistance of an area inside of the peripheral portion in a top view, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; and first protective layer located on an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer.Type: GrantFiled: November 7, 2019Date of Patent: July 6, 2021Assignee: NICHIA CORPORATIONInventors: Shun Kitahama, Yoshiki Inoue, Kazuhiro Nagamine, Junya Narita
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Publication number: 20210193867Abstract: A method for manufacturing a light-emitting element includes dividing a semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region, a first surface being exposed from under the semiconductor structure in the exposed region; etching protrusions formed in the exposed region; bonding a light-transmitting body to a second surface so as to form a bonded body; forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from the first surface side; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.Type: ApplicationFiled: December 7, 2020Publication date: June 24, 2021Applicant: NICHIA CORPORATIONInventors: Yoshiki INOUE, Shun KITAHAMA, Yoshiyuki AIHARA, Yoshiki MATSUSHITA, Keisuke HIGASHITANI
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Publication number: 20200321492Abstract: A light-emitting element includes: a semiconductor stacked body; an insulating film located on a p-type semiconductor layer; a p-side electrode located on the insulating film, the p-side electrode comprising a pad portion and an extension portion, the extension portion being continuous with the pad portion in a first direction; a light-transmissive conductive film located on the p-type semiconductor layer and on the insulating film, the light-transmissive conductive film having an opening that is continuous along the extension portion on the insulating film; and a reflective film located between the insulating film and the p-side electrode in the opening. The opening includes a first opening and a second opening. In the second direction, the light-transmissive conductive film is electrically connected to the extension portion of the p-side electrode at a portion adjacent to a region where the first opening is located.Type: ApplicationFiled: March 4, 2020Publication date: October 8, 2020Applicant: NICHIA CORPORATIONInventor: Shun KITAHAMA
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Publication number: 20200075797Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer, wherein a resistance of a peripheral portion of the p-side nitride semiconductor layer is higher than a resistance of an area inside of the peripheral portion in a top view, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; and first protective layer located on an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer.Type: ApplicationFiled: November 7, 2019Publication date: March 5, 2020Applicant: NICHIA CORPORATIONInventors: Shun KITAHAMA, Yoshiki INOUE, Kazuhiro NAGAMINE, Junya NARITA
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Patent number: 10505072Abstract: A method for manufacturing a plurality of light emitting elements includes: providing a semiconductor wafer comprising: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer; forming a protective layer on an upper face of the p-side nitride semiconductor layer in regions that include borders of areas to become the plurality of light emitting elements; reducing a resistance of the p-side nitride semiconductor in areas where no protective layer has been formed by annealing the semiconductor wafer; irradiating a laser beam on the substrate so as to form modified regions in the substrate; and obtaining a plurality of light emitting elements by dividing the semiconductor wafer in which the modified regions have been formed in the substrate.Type: GrantFiled: December 14, 2017Date of Patent: December 10, 2019Assignee: NICHIA CORPORATIONInventors: Shun Kitahama, Yoshiki Inoue, Kazuhiro Nagamine, Junya Narita
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Publication number: 20180175238Abstract: A method for manufacturing a plurality of light emitting elements includes: providing a semiconductor wafer comprising: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer; forming a protective layer on an upper face of the p-side nitride semiconductor layer in regions that include borders of areas to become the plurality of light emitting elements; reducing a resistance of the p-side nitride semiconductor in areas where no protective layer has been formed by annealing the semiconductor wafer; irradiating a laser beam on the substrate so as to form modified regions in the substrate; and obtaining a plurality of light emitting elements by dividing the semiconductor wafer in which the modified regions have been formed in the substrate.Type: ApplicationFiled: December 14, 2017Publication date: June 21, 2018Applicant: NICHIA CORPORATIONInventors: Shun KITAHAMA, Yoshiki INOUE, Kazuhiro NAGAMINE, Junya NARITA
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Patent number: 9941446Abstract: A method of manufacturing a light-emitting element includes forming a light-transmissive insulating film on a portion of an upper surface of a semiconductor layered body; forming a first light-transmissive electrode to continuously cover the upper surface of the semiconductor layered body and an upper surface of the light-transmissive insulating film; heat-treating the first light-transmissive electrode, and subsequently forming a metal film in at least a portion of a region above the light-transmissive insulating film; forming a second light-transmissive electrode to continuously cover an upper surface of the metal film and an upper surface of the first light-transmissive electrode, the second light-transmissive electrode being electrically connected to the first light-transmissive electrode; and forming a pad electrode in a region where the metal film is disposed in a top view, such that at least a portion of the pad electrode is in contact with an upper surface of the second light-transmissive electrode.Type: GrantFiled: December 22, 2016Date of Patent: April 10, 2018Assignee: NICHIA CORPORATIONInventor: Shun Kitahama
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Patent number: 9837579Abstract: In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.Type: GrantFiled: January 23, 2015Date of Patent: December 5, 2017Assignee: NICHIA CORPORATIONInventors: Masahiko Onishi, Shun Kitahama
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Patent number: 9761761Abstract: A light-emitting element includes a semiconductor stacked body, a light transmissive conductive film disposed on the semiconductor stacked body, the light transmissive conductive film including a plurality of through holes, insulation films disposed in the plurality of through holes, the plurality of through holes being disposed on the semiconductor stacked body; and a pad electrode disposed on the light transmissive conductive film and the insulation films.Type: GrantFiled: February 11, 2016Date of Patent: September 12, 2017Assignee: NICHIA CORPORATIONInventors: Shinichi Daikoku, Shun Kitahama, Keiji Emura, Akihiro Nakamura
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Publication number: 20170186914Abstract: A method of manufacturing a light-emitting element includes forming a light-transmissive insulating film on a portion of an upper surface of a semiconductor layered body; forming a first light-transmissive electrode to continuously cover the upper surface of the semiconductor layered body and an upper surface of the light-transmissive insulating film; heat-treating the first light-transmissive electrode, and subsequently forming a metal film in at least a portion of a region above the light-transmissive insulating film; forming a second light-transmissive electrode to continuously cover an upper surface of the metal film and an upper surface of the first light-transmissive electrode, the second light-transmissive electrode being electrically connected to the first light-transmissive electrode; and forming a pad electrode in a region where the metal film is disposed in a top view, such that at least a portion of the pad electrode is in contact with an upper surface of the second light-transmissive electrode.Type: ApplicationFiled: December 22, 2016Publication date: June 29, 2017Applicant: NICHIA CORPORATIONInventor: Shun KITAHAMA
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Patent number: 9608170Abstract: A method of manufacturing a semiconductor light emitting element includes providing a semiconductor stacked layer body; forming an insulating layer on a portion of the semiconductor stacked layer body; forming a light-transmissive electrode covering an upper surface of the semiconductor stacked layer body and an upper surface of the insulating layer, and on a region at least partially overlapping a region for disposing an extending portion in a plan view; forming a light reflecting layer in each of the openings of the light-transmissive electrode; forming a protective layer on a main surface side of the semiconductor stacked layer body; forming a mask on an upper surface of the protective layer except for the region for forming the pad electrode; etching the protective layer to form an opening in the protective layer; and forming a pad electrode in the opening of the protective layer.Type: GrantFiled: April 28, 2016Date of Patent: March 28, 2017Assignee: NICHIA CORPORATIONInventors: Shun Kitahama, Keiji Emura, Shinichi Daikoku