Abstract: The present invention relates to a semiconductor device and an electronic device that facilitate calibration and can obtain favorable characteristics. The semiconductor device includes a substrate, a millimeter wave antenna provided on the substrate, and an image sensor provided on the substrate, in which an antenna surface of the millimeter wave antenna and a light receiving surface of the image sensor are disposed at spatially partitioned positions. The present technology can be applied to a sensor module.

Abstract: Provided is a semiconductor device capable of maintaining the flatness of a glass substrate and sufficiently protecting an end portion of the glass substrate. A semiconductor device according to one aspect of the present disclosure includes: a glass substrate including a first surface, a second surface opposite to the first surface, and a first side surface between the first surface and the second surface; wirings provided on the first and second surfaces; a first insulating film that covers the first surface; a second insulating film that covers the second surface; and a third insulating film that covers the first side surface, the third insulating film being continuous with at least one of the first and second insulating films.

Abstract: The present technology relates to a semiconductor device and a method of manufacturing the same capable of improving reliability of a glass substrate on which a wiring layer is formed. A semiconductor device is provided with a glass substrate on a front surface or front and back surfaces of which a wiring layer including one or more layers of wiring is formed, an electronic component arranged inside a glass opening formed on the glass substrate, and a redistribution layer that connects the wiring of the glass substrate and the electronic component. The present technology is applicable to, for example, a high-frequency front-end module and the like.

Abstract: The present technology relates to a semiconductor device and a method of manufacturing the same capable of improving reliability of a glass substrate on which a wiring layer is formed. A semiconductor device is provided with a glass substrate on a front surface or front and back surfaces of which a wiring layer including one or more layers of wiring is formed, an electronic component arranged inside a glass opening formed on the glass substrate, and a redistribution layer that connects the wiring of the glass substrate and the electronic component. The present technology is applicable to, for example, a high-frequency front-end module and the like.

Abstract: The present technology relates to a semiconductor device providing an image sensor package capable of coping with an increase in the number of I/Os of an image sensor, a manufacturing method thereof, and an electronic apparatus. The semiconductor device includes an image sensor, a glass substrate, a wiring layer, and external terminals. In the image sensor, photoelectric conversion elements are formed on a semiconductor substrate. The glass substrate is arranged on a first main surface side of the image sensor. The wiring layer is formed on a second main surface side opposite to the first main surface. Each of the external terminals outputs a signal of the image sensor. Metal wiring of the wiring layer extends to an outer peripheral portion of the image sensor and is connected to the external terminals. The present technology can be applied to, for example, an image sensor package and the like.

Abstract: The present disclosure relates to a wiring board and a manufacturing method that simultaneously solve problems of stress and heat release A wiring board as one aspect of the present disclosure includes a glass substrate as a core member, and a plurality of through holes arranged in a cyclic manner in the glass substrate. The through holes are filled with different kinds of filling materials. A wiring board manufacturing method as one aspect of the present disclosure includes: a through hole formation step of forming through holes arranged in a cyclic manner in a glass substrate serving as a core member; and a filling step of forming a protecting sheet on the glass substrate, and filling through holes with a filling material through openings formed in the protecting sheet. The present disclosure can be applied to a wiring board that has a through-electrode-equipped glass substrate as the core member.

Abstract: A method of manufacturing a wiring substrate that has a wiring including a through glass via and is formed of a glass substrate includes forming an alteration layer that penetrates the wiring substrate and is patterned, forming the wiring on a front surface of the wiring substrate in which the alteration layer has been formed, and filling an electrode material in a hole formed by removing the alteration layer, thereby forming the through glass via that connects the wiring on the front surface of the wiring substrate and the wiring on a back surface side thereof.

Abstract: There is provided a method for manufacturing a wiring substrate with a through electrode, the method including providing a device substrate having a through hole, an opening of the through hole being blocked by a current supply path and the wiring substrate including the device substrate as a core layer with the through electrode; and disposing a first metal in the through hole to form the through electrode by electroplating, in a depth direction of the through hole, using the current supply path.

Abstract: The present technology relates to a semiconductor device providing an image sensor package capable of coping with an increase in the number of I/Os of an image sensor, a manufacturing method thereof, and an electronic apparatus. The semiconductor device includes an image sensor, a glass substrate, a wiring layer, and external terminals. In the image sensor, photoelectric conversion elements are formed on a semiconductor substrate. The glass substrate is arranged on a first main surface side of the image sensor. The wiring layer is formed on a second main surface side opposite to the first main surface. Each of the external terminals outputs a signal of the image sensor. Metal wiring of the wiring layer extends to an outer peripheral portion of the image sensor and is connected to the external terminals. The present technology can be applied to, for example, an image sensor package and the like.

Abstract: There is provided a method for manufacturing a wiring substrate with a through electrode, the method including providing a device substrate having a through hole, an opening of the through hole being blocked by a current supply path and the wiring substrate including the device substrate as a core layer with the through electrode; and disposing a first metal in the through hole to form the through electrode by electroplating, in a depth direction of the through hole, using the current supply path.

Abstract: The present disclosure relates to a wiring board and a manufacturing method that simultaneously solve problems of stress and heat release A wiring board as one aspect of the present disclosure includes a glass substrate as a core member, and a plurality of through holes arranged in a cyclic manner in the glass substrate. The through holes are filled with different kinds of filling materials. A wiring board manufacturing method as one aspect of the present disclosure includes: a through hole formation step of forming through holes arranged in a cyclic manner in a glass substrate serving as a core member; and a filling step of forming a protecting sheet on the glass substrate, and filling through holes with a filling material through openings formed in the protecting sheet. The present disclosure can be applied to a wiring board that has a through-electrode-equipped glass substrate as the core member.

Abstract: There is provided a radiation detector including: a plurality of photoelectric conversion devices, each photoelectric conversion device formed at least partially within an embedding layer and having a light receiving surface situated at least partially outside of the embedding layer, and a plurality of scintillator crystals, at least a first scintillator crystal of the plurality of scintillator crystals in contact with at least one light receiving surface at a proximal end, wherein a cross-section of the first scintillator crystal at the proximal end is smaller than a cross-section of the first scintillator crystal at a distal end.

Abstract: A method of manufacturing a wiring substrate that has a wiring including a through glass via and is formed of a glass substrate includes forming an alteration layer that penetrates the wiring substrate and is patterned, forming the wiring on a front surface of the wiring substrate in which the alteration layer has been formed, and filling an electrode material in a hole formed by removing the alteration layer, thereby forming the through glass via that connects the wiring on the front surface of the wiring substrate and the wiring on a back surface side thereof.

Abstract: A signal transmission cable has a cable including a dielectric layer and a metallic layer. The signal transmission cable further includes a connector having a chip with a terminal. The connector includes a substrate having an organic layer, and a portion of the organic layer extends from the substrate so as to form the dielectric layer of the cable. The metallic layer is located on the dielectric layer and is directly connected to the terminal.

Abstract: A method of manufacturing a wiring substrate that has a wiring including a through glass via and is formed of a glass substrate includes forming an alteration layer that penetrates the wiring substrate and is patterned, forming the wiring on a front surface of the wiring substrate in which the alteration layer has been formed, and filling an electrode material in a hole formed by removing the alteration layer, thereby forming the through glass via that connects the wiring on the front surface of the wiring substrate and the wiring on a back surface side thereof.

Abstract: A signal transmission cable has a cable including a dielectric layer and a metallic layer. The signal transmission cable further includes a connector having a chip with a terminal. The connector includes a substrate having an organic layer, and a portion of the organic layer extends from the substrate so as to form the dielectric layer of the cable. The metallic layer is located on the dielectric layer and is directly connected to the terminal.

Abstract: There is provided a radiation detector including: a plurality of photoelectric conversion devices, each photoelectric conversion device formed at least partially within an embedding layer and having a light receiving surface situated at least partially outside of the embedding layer, and a plurality of scintillator crystals, at least a first scintillator crystal of the plurality of scintillator crystals in contact with at least one light receiving surface at a proximal end, wherein a cross-section of the first scintillator crystal at the proximal end is smaller than a cross-section of the first scintillator crystal at a distal end.

Abstract: A signal transmission cable has a cable including a dielectric layer and a metallic layer. The signal transmission cable further includes a connector having a chip with a terminal. The connector includes a substrate having an organic layer, and a portion of the organic layer extends from the substrate so as to form the dielectric layer of the cable. The metallic layer is located on the dielectric layer and is directly connected to the terminal.

Abstract: A method of manufacturing a wiring substrate that has a wiring including a through glass via and is formed of a glass substrate includes forming an alteration layer that penetrates the wiring substrate and is patterned, forming the wiring on a front surface of the wiring substrate in which the alteration layer has been formed, and filling an electrode material in a hole formed by removing the alteration layer, thereby forming the through glass via that connects the wiring on the front surface of the wiring substrate and the wiring on a back surface side thereof.

Abstract: A signal transmission cable comprises a cable including a dielectric layer and a metallic layer; and a connector having a chip with a terminal. The connector includes a substrate having an organic layer, and a portion of the organic layer extends from the substrate so as to form the dielectric layer of the cable. The metallic layer is located on the dielectric layer and is directly connected to the terminal.