Abstract: A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a C6H11O2 detection count number of 100 or less when the insulator film is irradiated with Bi5++ ions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method. The solar cell can have excellent weather resistance and high photoelectric conversion characteristics.

Abstract: A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a C6H11O2 detection count number of 100 or less when the insulator film is irradiated with Bi5++ ions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method. The solar cell can have excellent weather resistance and high photoelectric conversion characteristics.

Abstract: A solar cell having, on a semiconductor substrate's first main surface a first conductivity type, a base layer having first conductivity type and an emitter layer which is adjacent to base layer and has a second conductivity type which is a conductivity type opposite to first conductivity type, the solar cell includes: a base electrode which is electrically connected with base layer; and an emitter electrode which is electrically connected with emitter layer, solar cell including: dielectric films which are in contact with base and emitter layer on first main surface; first insulator films which cover the emitter electrode, are placed on the dielectric films, and are arranged to have a gap at least on base layer; and a base bus bar electrode placed at least on first insulator films, and being wherein gap distance between the first insulator films is 40 ?m or more and (W+110) ?m or less.

Abstract: A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a C6H11O2 detection count number of 100 or less when the insulator film is irradiated with Bi5++ ions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method. There can be provided a solar cell having excellent weather resistance and high photoelectric conversion characteristics.

Abstract: A solar cell having, on a semiconductor substrate's first main surface a first conductivity type, a base layer having first conductivity type and an emitter layer which is adjacent to base layer and has a second conductivity type which is a conductivity type opposite to first conductivity type, the solar cell includes: a base electrode which is electrically connected with base layer; and an emitter electrode which is electrically connected with emitter layer, solar cell including: dielectric films which are in contact with base and emitter layer on first main surface; first insulator films which cover the emitter electrode, are placed on the dielectric films, and are arranged to have a gap at least on base layer; and a base bus bar electrode placed at least on first insulator films, and being wherein gap distance between the first insulator films is 40 ?m or more and (W+110) ?m or less.

Abstract: A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a C6H11O2 detection count number of 100 or less when the insulator film is irradiated with Bi5++ ions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method. There can be provided a solar cell having excellent weather resistance and high photoelectric conversion characteristics.

Abstract: A solar cell having, on a semiconductor substrate's first main surface a first conductivity type, a base layer having first conductivity type and an emitter layer which is adjacent to base layer and has a second conductivity type which is a conductivity type opposite to first conductivity type, the solar cell includes: a base electrode which is electrically connected with base layer; and an emitter electrode which is electrically connected with emitter layer, solar cell including: dielectric films which are in contact with base and emitter layer on first main surface; first insulator films which cover the emitter electrode, are placed on the dielectric films, and are arranged to have a gap at least on base layer; and a base bus bar electrode placed at least on first insulator films, and being wherein gap distance between the first insulator films is 40 ?m or more and (W+110) ?m or less.

Abstract: Disclosed is a solar cell having a silicon monocrystal substrate surface with a textured structure and, near the surface of said substrate, a damage layer reflecting the slice processing history from the time of manufacture of the silicon monocrystal substrate. The damage layer near the surface of the silicon monocrystal substrate is derived from the slice processing history at the time of manufacture of the substrate and functions as a gettering site, contributing to a longer lifetime of the substrate minority carriers. Thanks to this effect, the solar cell characteristics are dramatically increased. Further, new damage need be inflicted, and no additional work is required because damage from the slicing is used.

Abstract: Disclosed is a solar cell having a silicon monocrystal substrate surface with a textured structure and, near the surface of said substrate, a damage layer reflecting the slice processing history from the time of manufacture of the silicon monocrystal substrate. The damage layer near the surface of the silicon monocrystal substrate is derived from the slice processing history at the time of manufacture of the substrate and functions as a gettering site, contributing to a longer lifetime of the substrate minority carriers. Thanks to this effect, the solar cell characteristics are dramatically increased. Further, new damage need be inflicted, and no additional work is required because damage from the slicing is used.