Abstract: The present disclosure relates to manufacturing techniques for manufacturing multiple semiconductor package assemblies on a lead frame, as well as a semiconductor package assembly manufactured using this method. The method reduces the distances or intermediate spacings between singulated semiconductor packages on a lead frame to a width equal to the width of a cutting tool which width is significantly smaller than the distance required in any known modelling encapsulation technique. Therefore, the method according to the disclosure allows to position more semiconductor packages on a lead frame on one process step. Accordingly, as the number of semiconductor packages per lead frame surface is increased, more semiconductor packages can be manufactured and singulated in one process step, which reduces costs and processing time.

Abstract: A method for producing a semiconductor package includes providing a lead frame and a bond pad with a space therebetween. The frame is provided with a die bonded thereon and a die pad. The die, the pad, a part of the frame, a part of the bond pad and the space between the frame and the bond pad are encapsulated. Part of the first encapsulation is removed to create a cavity having a bottom surface including an exposed surface of the die, an exposed surface of the pad, an exposed surface of the bond pad and a connecting region between the exposed surface of the pad and the bond pad. The cavity is partly filled with an electrically conductive paste. The electrically conductive paste is cured to obtain an interconnect between the die pad and the bond pad. The interconnect is encapsulated.

Abstract: A semiconductor device structure and method of manufacturing a semiconductor device. The semiconductor device may comprise a semiconductor die having a top major surface that has one or more electrical contacts formed thereon, an opposing bottom major surface, and side surfaces; a molding material encapsulating the top major surface, the bottom major surface and the side surfaces of the semiconductor die, wherein the molding material defines a package body that has a top surface and a side surface; wherein the plurality of electrical contacts are exposed on the top surface of the package body and a metal layer is arranged over and electrically connected to the electrical contacts and wherein the metal layer extends to and at least partially covers a side surface of the package body.

Abstract: An electronic device including a die and at least one lead. The electronic device further includes a corresponding at least one connector, each connector for connecting the die to a corresponding lead or leads, and each connector having a first end disposed in bondable proximity to a complementary surface of the corresponding lead and a second end disposed in bondable proximity to a complementary surface of the die. An end portion of at least one of the first end and second end has a formation, the formation in combination with the complementary surface of one, or both, of the respective lead or the die defining therebetween a first region and at least a second region configured to attract by capillary action an electrically conductive bonding material to consolidate therein.

Abstract: A semiconductor device and a method of making the same. The device includes an electrically conductive heat sink having a first surface. The device also includes a semiconductor substrate. The device further includes a first contact located on a first surface of the substrate. The device also includes a second contact located on a second surface of the substrate. The first surface of the substrate is mounted on the first surface of the heat sink for electrical and thermal conduction between the heat sink and the substrate via the first contact. The second surface of the substrate is mountable on a surface of a carrier.

Abstract: A semiconductor device includes a semiconductor die having a top surface that has one or more electrical contacts formed thereon, and an opposite bottom surface. A molding material encapsulates the top surface and at least a part of a side surface of the semiconductor die. The molding material defines a package body that has a top surface and a side surface. Openings are formed on the top surface of the package body, and the electrical contacts are partially exposed from the molding material through the openings. A metal layer is formed over and electrically connected to the electrical contacts through the openings. The metal layer extends to and at least partially covers the side surface of the package body.

Abstract: An electronic device including a die and at least one lead. The electronic device further includes a corresponding at least one connector, each connector for connecting the die to a corresponding lead or leads, and each connector having a first end disposed in bondable proximity to a complementary surface of the corresponding lead and a second end disposed in bondable proximity to a complementary surface of the die. An end portion of at least one of the first end and second end has a formation, the formation in combination with the complementary surface of one, or both, of the respective lead or the die defining therebetween a first region and at least a second region configured to attract by capillary action an electrically conductive bonding material to consolidate therein.

Abstract: A semiconductor device structure and method of manufacturing a semiconductor device. The semiconductor device may comprise a semiconductor die having a top major surface that has one or more electrical contacts formed thereon, an opposing bottom major surface, and side surfaces; a molding material encapsulating the top major surface, the bottom major surface and the side surfaces of the semiconductor die, wherein the molding material defines a package body that has a top surface and a side surface; wherein the plurality of electrical contacts are exposed on the top surface of the package body and a metal layer is arranged over and electrically connected to the electrical contacts and wherein the metal layer extends to and at least partially covers a side surface of the package body.

Abstract: An electronic device has a first surface, a second surface opposite to the first surface, and sidewalls located between and adjoining the first and second surfaces. The electronic device includes contact pads on the first surface. The contact pads extend from the first surface to adjoining sidewalls, and abut the sidewalls.

Abstract: A semiconductor die has internal circuitry formed on two more internal layers, and die bonding pads arranged on a top surface of the die. The bonding pads are connected to the internal circuitry for providing input and output signals to the internal circuitry. One or more connecting lines electrically connect one or more pairs of the die bonding pads, thereby defining a bonding pad layout. The die bonding pads are arranged and connected with the connecting lines such that the bonding pad layout is reversible, which allows the die to be used in different package types (e.g., TSSOP or DFN) yet maintain a standardized pin arrangement without the necessity for long or crossed bond wires.

Abstract: A semiconductor device includes a semiconductor die having a first side having a first terminal and an opposite second side having at least two second terminals. A lead frame has a first part and a second part. The second part of the lead frame is both electrically and mechanically spaced from the first part. The second side of the die is attached to the lead frame such that the first and second lead frame parts are respectively connected to the at least two second terminals. The first and second lead frame parts include respective first and second extensions that project past a side of the die and provide first and second terminal surfaces that are co-planar with the first terminal on the first side of the die. The device makes use of the terminals on the both sides of the die. The device second side is exposed for thermal performance.

Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate having a major surface, one or more contacts located on the major surface and an encapsulant covering at least the major surface. A peripheral edge of each contact defines a contact area on the major surface. The device also includes one or more bond pads located outside the encapsulant. Each bond pad is electrically connected to a respective contact located on the major surface of the substrate by a respective metal filled via that passes through the encapsulant. A sidewall of each respective metal filled via, at the point at which it meets the respective contact, falls inside the contact area defined by the respective contact when viewed from above the major surface of the substrate, whereby none of the metal filling each respective via extends outside the contact area of each respective contact.

Abstract: A semiconductor die has internal circuitry formed on two more internal layers, and die bonding pads arranged on a top surface of the die. The bonding pads are connected to the internal circuitry for providing input and output signals to the internal circuitry. One or more connecting lines electrically connect one or more pairs of the die bonding pads, thereby defining a bonding pad layout. The die bonding pads are arranged and connected with the connecting lines such that the bonding pad layout is reversible, which allows the die to be used in different package types (e.g., TSSOP or DFN) yet maintain a standardized pin arrangement without the necessity for long or crossed bond wires.

Abstract: A semiconductor device includes a semiconductor die having a top surface that has one or more electrical contacts formed thereon, and an opposite bottom surface. A molding material encapsulates the top surface and at least a part of a side surface of the semiconductor die. The molding material defines a package body that has a top surface and a side surface. Openings are formed on the top surface of the package body, and the electrical contacts are partially exposed from the molding material through the openings. A metal layer is formed over and electrically connected to the electrical contacts through the openings. The metal layer extends to and at least partially covers the side surface of the package body.

Abstract: A semiconductor device includes a semiconductor die having a first side having a first terminal and an opposite second side having at least two second terminals. A lead frame has a first part and a second part. The second part of the lead frame is both electrically and mechanically spaced from the first part. The second side of the die is attached to the lead frame such that the first and second lead frame parts are respectively connected to the at least two second terminals. The first and second lead frame parts include respective first and second extensions that project past a side of the die and provide first and second terminal surfaces that are co-planar with the first terminal on the first side of the die. The device makes use of the terminals on the both sides of the die. The device second side is exposed for thermal performance.

Abstract: An electronic device includes a conductive layer, a device die, and a connecting member. The conductive layer is formed by coating a conductive material on a substrate. The device die and the connecting member are disposed on the conductive layer and spaced from each other. The device die includes a first connection point on one side that is in contact with and electrically connected to the conductive layer, and a second connection point on another side thereof. The connecting member includes a third connection point on a side thereof electrically connected to and in contact with the conductive layer, and a fourth connection point on another side thereof. The second and fourth connection points are configured to provide external connections of the electronic device.

Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate having a major surface, one or more contacts located on the major surface and an encapsulant covering at least the major surface. A peripheral edge of each contact defines a contact area on the major surface. The device also includes one or more bond pads located outside the encapsulant. Each bond pad is electrically connected to a respective contact located on the major surface of the substrate by a respective metal filled via that passes through the encapsulant. A sidewall of each respective metal filled via, at the point at which it meets the respective contact, falls inside the contact area defined by the respective contact when viewed from above the major surface of the substrate, whereby none of the metal filling each respective via extends outside the contact area of each respective contact.

Abstract: Consistent with an example embodiment, a semiconductor device comprises a device die having bond pads providing connection to device die circuitry. The semiconductor device includes a built-up substrate lead frame having, a sub-structure of I/O terminals and a die attach area, the I/O terminals and die attach area enveloped in a molding compound, the die attach area having exposed areas to facilitate device die attachment thereon and the terminal I/O terminals providing connection to the device die bond pads; connection traces electrically couple the I/O terminals with one another, said connection traces having facilitated electroplating of exposed vertical surfaces of the I/O terminals during assembly, said connection traces being severed after assembly. An envelope of molding compound encapsulates the device die onto the built-up substrate lead frame.

Abstract: An electronic device has a first surface, a second surface opposite to the first surface, and sidewalls located between and adjoining the first and second surfaces. The electronic device includes contact pads on the first surface. The contact pads extend from the first surface to adjoining sidewalls, and abut the sidewalls.

Abstract: Consistent with an example embodiment, a semiconductor device comprises a device die having bond pads providing connection to device die circuitry. The semiconductor device includes a built-up substrate lead frame having, a sub-structure of I/O terminals and a die attach area, the I/O terminals and die attach area enveloped in a molding compound, the die attach area having exposed areas to facilitate device die attachment thereon and the terminal I/O terminals providing connection to the device die bond pads; connection traces electrically couple the I/O terminals with one another, said connection traces having facilitated electroplating of exposed vertical surfaces of the I/O terminals during assembly, said connection traces being severed after assembly. An envelope of molding compound encapsulates the device die onto the built-up substrate lead frame.