Patents by Inventor Shun-Yi Hsu

Shun-Yi Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetoresistive random access memory structure
    Patent number: 11917923
    Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.
    Type: Grant
    Filed: April 28, 2021
    Date of Patent: February 27, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Ching-Hua Hsu, Si-Han Tsai, Shun-Yu Huang, Chen-Yi Weng, Ju-Chun Fan, Che-Wei Chang, Yi-Yu Lin, Po-Kai Hsu, Jing-Yin Jhang, Ya-Jyuan Hung
  • Method and apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition
    Publication number: 20050115492
    Abstract: A method and the apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition can process many epitaxy reactions of the organic light-emitting diodes at the same time. More, the different types of epitaxy layers can individual react while passing through the adjustment of time periods. By using the multiple organic light-emitting diodes, it can form multiple epitaxy layers with varying types at the same time. Therefore, it achieves the purpose of shortening the manufacturing process.
    Type: Application
    Filed: November 28, 2003
    Publication date: June 2, 2005
    Inventors: Chia-Cheng Liu, Chiung-Yu Chang, Tung-Hung Tsai, Shun-Yi Hsu, Chiu-Ming Peng