Abstract: A semiconductor package and method of assembling a semiconductor package includes encapsulating a first pre-packaged semiconductor die stacked on top of and interconnected with a second semiconductor die. The first packaged semiconductor die is positioned and fixed relative to a lead frame with a temporary carrier such as tape. The second semiconductor die is attached and interconnected directly to the first packaged semiconductor die and lead frame. The interconnected first packaged die and second semiconductor die, and lead frame are encapsulated to form the semiconductor package. Different types of semiconductor packages such as quad flat no-lead (QFN) and ball grid array (BGA) may be formed, which provide increased input/output (I/O) count and functionality.

Abstract: A process for assembling a semiconductor device includes providing a lead frame having a native plane and a plurality of leads having a native lead pitch. The process includes trimming and forming a first subset of the plurality of leads to provide a first row of leads. The process includes trimming and forming a second subset of the plurality of leads to provide a second row of leads. At least one subset of leads is formed with an obtuse angle relative to the native plane such that lead pitch associated with the first or second subset of leads is greater than the native lead pitch.

Abstract: A lead frame has a flag, a peripheral frame, and main tie bars coupling the flag to the peripheral frame. At least one cross tie bar extends between two of the main tie bars and an inner row of external connector pads extending from an inner side of the cross tie bar and an outer row of external connector pads extending from an outer side of the cross tie bar. Both an inner non-electrically conductive support bar and an outer non-electrically conductive support bar are attached across the two of the main tie bars. The inner non-electrically conductive support bar is attached to upper surfaces of the two of the main tie bars and to upper surfaces of the inner row of the external connector pads.

Abstract: A method of producing semiconductor dies includes providing a semiconductor wafer having front and back faces and an array of integrated circuits fabricated on it. The integrated circuits having active faces at the front face of the wafer. Grooves are cut mechanically from the back face partially through the wafer along saw streets between the integrated circuits. The integrated circuits are then singulated by scanning a laser beam on the front face within and along the saw streets, which scribes the wafer from the front face, and then singulating the integrated circuits by mechanically cleaving the wafer along the saw streets.

Abstract: A semiconductor die has interface electrodes on an interface surface and an electrically conductive layer on a mounting surface that is opposite to the interface surface. The electrically conductive layer extends onto side regions of the semiconductor die. Electrical conductors couple the interface electrodes to external connector pads. A solder alloy joins the semiconductor die to a flag. The solder alloy is disposed between the flag and the electrically conductive layer and provides a joint between the flag and both the mounting surface and the side regions.

Abstract: A lead frame has a flag, a peripheral frame, and main tie bars coupling the flag to the peripheral frame. At least one cross tie bar extends between two of the main tie bars and an inner row of external connector pads extending from an inner side of the cross tie bar and an outer row of external connector pads extending from an outer side of the cross tie bar. Both an inner non-electrically conductive support bar and an outer non-electrically conductive support bar are attached across the two of the main tie bars. The inner non-electrically conductive support bar is attached to upper surfaces of the two of the main tie bars and to upper surfaces of the inner row of the external connector pads.

Abstract: A semiconductor device includes a semiconductor die having first and second opposing faces and an edge surface. The edge surface has an undercut under the first face. The second face of the semiconductor die is bonded to a bonding surface of a die support member, such as a thermally conductive flag of a lead frame, with a die attach material. A fillet of the bonding material is formed within the undercut.

Abstract: A semiconductor package and method of assembling a semiconductor package includes encapsulating a first pre-packaged semiconductor die stacked on top of and interconnected with a second semiconductor die. The first packaged semiconductor die is positioned and fixed relative to a lead frame with a temporary carrier such as tape. The second semiconductor die is attached and interconnected directly to the first packaged semiconductor die and lead frame. The interconnected first packaged die and second semiconductor die, and lead frame are encapsulated to form the semiconductor package. Different types of semiconductor packages such as quad flat no-lead (QFN) and ball grid array (BGA) may be formed, which provide increased input/output (I/O) count and functionality.

Abstract: A process for assembling a semiconductor device includes providing a lead frame having a native plane and a plurality of leads having a native lead pitch. The process includes trimming and forming a first subset of the plurality of leads to provide a first row of leads. The process includes trimming and forming a second subset of the plurality of leads to provide a second row of leads. At least one subset of leads is formed with an obtuse angle relative to the native plane such that lead pitch associated with the first or second subset of leads is greater than the native lead pitch.