Patents by Inventor Shunchong Wang

Shunchong Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nonlinear optical device manufactured with 4H silicon carbide crystal
    Patent number: 9500931
    Abstract: Provided is a nonlinear optical device manufactured with 4H silicon carbide crystal. The nonlinear optical crystal may be configured to alter at least a light beam (12) at a frequency to generate at least a light beam (16) at a further frequency different from the frequency. The nonlinear optical crystal comprises a 4H silicon carbide crystal (13). The nonlinear optical device is more compatible with practical applications in terms of outputting mid-infrared laser at high power and high quality and thus are more applicable in practice, because the 4H silicon carbide crystal has a relatively high laser induced damage threshold, a relatively broad transmissive band (0.38-5.9 ?m and 6.6-7.08 ?m), a relatively great 2nd-order nonlinear optical coefficient (d15=6.7 pm/V), a relatively great birefringence, a high thermal conductivity (490 Wm?1K?1), and a high chemical stability.
    Type: Grant
    Filed: January 6, 2012
    Date of Patent: November 22, 2016
    Assignee: Institute of Physics, Chinese Academy of Sciences
    Inventors: Xiaolong Chen, Shunchong Wang, Tonghua Peng, Gang Wang, Chunjun Liu, Wenjun Wang, Shifeng Jin
  • NONLINEAR OPTICAL DEVICE MANUFACTURED WITH 4H SILICON CARBIDE CRYSTAL
    Publication number: 20150085349
    Abstract: Provided is a nonlinear optical device manufactured with 4H silicon carbide crystal. The nonlinear optical crystal may be configured to alter at least a light beam (12) at a frequency to generate at least a light beam (16) at a further frequency different from the frequency. The nonlinear optical crystal comprises a 4H silicon carbide crystal (13). The nonlinear optical device is more compatible with practical applications in terms of outputting mid-infrared laser at high power and high quality and thus are more applicable in practice, because the 4H silicon carbide crystal has a relatively high laser induced damage threshold, a relatively broad transmissive band (0.38-5.9 ?m and 6.6-7.08 ?m), a relatively great 2nd-order nonlinear optical coefficient (d15=6.7 pm/V), a relatively great birefringence, a high thermal conductivity (490 Wm?1K?1), and a high chemical stability.
    Type: Application
    Filed: January 6, 2012
    Publication date: March 26, 2015
    Applicant: Institute of Physics, Chinese Academy of Sciences
    Inventors: Xiaolong Chen, Shunchong Wang, Tonghua Peng, Gang Wang, Chunjun Liu, Wenjun Wang, Shifeng Jin