Abstract: A bonding pad is described. A substrate having integrated circuits formed therein is provided. A dielectric layer having several trench structure formed therein is formed over the substrate, and each trench structure has several trenches radially arranged in the dielectric layer. A conductive layer is formed on the dielectric layer and fills the trenches, and the conductive layer is electrically coupled to the integrated circuits in the substrate through the trenches, respectively. By using the invention, the adhesion of the dielectric layers and the metal layers can be greatly improved and the compressive mechanical stress can be uniformly released to the substrate even if the wire width of the integrated circuit is reduced to the sub-micron level.