Patents by Inventor Shungo Sugawara

Shungo Sugawara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5672672
    Abstract: A polymeric optical material which is a mixture of a polysiloxane and at least one compound selected from the group consisting of polyisocyanate, silane, alkoxide and chelate, and an optical waveguide fabricated from the polymeric optical material having high thermal stability and low propagation loss over wide range. The polysiloxane may have, for example, a repeating unit of following formula (I): ##STR1## wherein each of R.sub.1 and R.sub.2 is independently an alkyl, deuterated alkyl or halogenated alkyl group, or a phenyl, deuterated phenyl or halogenated phenyl group. The optical waveguide includes a substrate, a clad layer provided on the substrate and a core layer surrounded by the clad layer. The clad layer is composed of a lower clad layer which is overlaid onto the substrate and an upper clad layer which surrounds the core layer.
    Type: Grant
    Filed: October 26, 1995
    Date of Patent: September 30, 1997
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Michiyuki Amano, Toshio Watanabe, Mitsuo Usui, Shungo Sugawara, Shoichi Hayashida, Saburo Imamura
  • Patent number: 4529659
    Abstract: Magnetic recording member having a magnetic storage layer covered by composite overlaying layers including an intermediate layer and a lubricant layer. The thin intermediate layer is formed by coating an aminosilane or epoxysilane compound directly or indirectly over the magnetic layer. The lubricant layer is formed over the intermediate layer by coating a lubricant made of a fluorinated hydrocarbon polymer having a terminal carboxyl or sulfonic acid group. The lubricant layer is chemically coupled with the intermediate layer by reacting the terminal carboxy or sulfonic acid group with the aminosilane or epoxysilane compound of the lubricant layer at room temperature or by heating, whereby the lubricant layer is stabilized to suppress deterioration of the lubricant layer and to suppress the reduction in lubricating property due to dispersion.
    Type: Grant
    Filed: October 25, 1984
    Date of Patent: July 16, 1985
    Assignee: Nippon Telegraph & Telephone Public Corporation
    Inventors: Mitsutoshi Hoshino, Akira Terada, Shungo Sugawara
  • Patent number: 4286049
    Abstract: A method for forming a negative resist pattern which applies as a high energy beam-sensitive material a polymer consisting of components expressed by the general structural formula: ##STR1## where: X=halogen or ##STR2## (R.sub.2 is H or CH.sub.3) R.sub.1 =H or CH.sub.3n=1 to 3m, l=integers having a relationship of 50.ltoreq.m+l.ltoreq.50,000.
    Type: Grant
    Filed: July 3, 1979
    Date of Patent: August 25, 1981
    Assignee: Nippon Telegraph and Telephone Public Corporation
    Inventors: Saburo Imamura, Shungo Sugawara, Hirotsugu Sato
  • Patent number: 4187205
    Abstract: A radiation-sensitive composition comprising a radiation-sensitive polymer which has in its molecule a plurality of epoxy groups and a plurality of bromine atoms, and at least one stabilizer which is selected from the group consisting of compounds having stable free radicals, polymerization inhibitors, ketone-amine reaction products, and phenol derivatives. Even when the composition is preserved for a long term, the characteristics do not change.
    Type: Grant
    Filed: February 15, 1978
    Date of Patent: February 5, 1980
    Assignees: Nippon Telegraph and Telephone Public Corporation, Hitachi, Ltd.
    Inventors: Yoshio Hatano, Saburo Nonogaki, Shinkichi Horigome, Shungo Sugawara
  • Patent number: 4125672
    Abstract: A polymeric resist mask composition thinly coated on a semiconductor substrate, wherein the prescribed portions of said resist mask are exposed to high energy rays such as electron beams, X-rays or ultraviolet rays for degradation, and the degraded portions of the resist mask are removed by an organic solvent to present a prescribed resist mask pattern on the semiconductor substrate, which comprises a halogenated polymethacrylic ester whose composition is expressed by the general formula ##STR1## (WHERE R denotes a halogenated alkyl radical including a halogen element selected from the group consisting of fluorine, chlorine and bromine, and at least one fluorine atom in case said radical contains chlorine or bromine and n indicates an average polymerization degree of 100 to 20,000) and an organic solvent for said halogenated polymethacrylate.
    Type: Grant
    Filed: January 19, 1977
    Date of Patent: November 14, 1978
    Assignee: Nippon Telegraph and Telephone Public Corporation
    Inventors: Masami Kakuchi, Shungo Sugawara, Kei Murase, Kentaro Matsuyama