Abstract: A method and system for multi-zone control of temperature for a substrate is described. The temperature control system comprises a heat exchanger coupled to two or more fluid channels in a substrate holder configured to support the substrate. The heat exchanger is configured to adjust the temperature of a heat transfer fluid flowing through the two or more fluid channels. The temperature control system further comprises a heat transfer unit having an inlet that is configured to receive heat transfer fluid from the heat exchanger at a bulk fluid temperature. Additionally, the heat transfer unit comprises a first outlet configured to couple a portion of the heat transfer fluid at a first temperature less than the bulk temperature to a first fluid channel of the two or more fluid channels, and a second outlet configured to couple a remaining portion of the heat transfer fluid at a second temperature greater than the bulk fluid temperature to a second fluid channel of the two or more fluid channels.

Abstract: Embodiments of apparatus and methods for performing high throughput non-plasma processing are generally described herein. Other embodiments may be described and claimed.

Abstract: A method and system for multi-zone control of temperature for a substrate is described. The temperature control system comprises a heat exchanger coupled to two or more fluid channels in a substrate holder configured to support the substrate. The heat exchanger is configured to adjust the temperature of a heat transfer fluid flowing through the two or more fluid channels. The temperature control system further comprises a heat transfer unit having an inlet that is configured to receive heat transfer fluid from the heat exchanger at a bulk fluid temperature. Additionally, the heat transfer unit comprises a first outlet configured to couple a portion of the heat transfer fluid at a first temperature less than the bulk temperature to a first fluid channel of the two or more fluid channels, and a second outlet configured to couple a remaining portion of the heat transfer fluid at a second temperature greater than the bulk fluid temperature to a second fluid channel of the two or more fluid channels.

Abstract: A member of processing a quartz member for a plasma processing device capable of suppressing the production of particles at the beginning of the use thereof and the production of chips thereafter, the quartz member for the plasma processing device, and the plasma processing device having the quartz member mounted thereon, the method comprising the steps of removing a large number of cracks 155 produced, after a diamond grinding, in the quartz member 151 for the plasma processing device used for a shield ring and a focus ring by performing a surface processing with abrasive grains of, for example, #320 to 400 in grain size, and performing the surface processing by using abrasive grains of smaller grain size to remove ruptured layers 163 while maintaining irregularities capable of adhering and holding deposit thereto.

Abstract: Contact holes (36a, 36b) are formed by means of plasma etching, such that the contact holes are formed from the top surface of a silicon oxide insulating film (31) down to a wiring layer (33a) at a deep position and a wiring layer (33b) at a shallow position, respectively, which are embedded in the insulating film (31). A process gas containing C4F8, CO, and Ar is used, while the process pressure is set to be from 30 to 60 mTorr, and the partial pressure of the C4F8 gas is set to be from 0.07 to 0.35 mTorr. Under these conditions, the process gas is turned into plasma, and the insulating film (31) is etched with the plasma to form the contact holes (36a, 36b).

Abstract: A plasma processing method in which a high-frequency power is supplied to a processing chamber in which an object to be processed is mounted, thereby producing a plasma in the processing chamber, and the object is processed in an atmosphere of the plasma, wherein the high-frequency power is subjected to modulation by a low-frequency power. In one embodiment a plasma is produced in a processing chamber by using an electric power with a direction of current changed with passing of time, and the object to be processed is processed in an atmosphere of the plasma, wherein a power having a basic frequency is subjected to frequency modulation with a frequency equal to n-times (n=an integer) the basic frequency. In a plasma processing apparatus of the invention, while a process gas is supplied to a processing chamber via a first gas introducing hole formed in an electrode, an object to be processed, which is held on an opposed electrode, is subjected to plasma processing.

Abstract: A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for.

Abstract: The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

Abstract: A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for.

Abstract: The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

Abstract: A method and an apparatus, both for ashing unnecessary layers such as a photoresist layer, formed on a semiconductor wafer, by applying ozone to the layer, are disclosed. An ashing gas containing oxygen atom radical, or containing oxygen gas and an ashing-promoting gas, is applied to the layer, thereby ashing the layer readily and efficiently. The surface temperature of the layer is set at a prescribed value, and the ashing gas is applied uniformly onto the entire surface of the layer, or onto a part thereof, thus ashing the whole layer, or a part thereof, uniformly at a high rate, and the end-point of the ashing process is detected, thereby to enhance the efficiency of the ashing process.