Abstract: A plasma processing device according to the present invention includes a plasma processing chamber consisting of a vacuum container, a pair of substrate holders standing opposite each other in the plasma processing chamber, a plurality of first reaction gas tubes provided between the two substrate holders, and a plurality of second reaction gas tubes provided between the plurality of first reaction gas tubes and each of the two substrate holders. The first reaction gas tubes, which are made of an electrically conductive material, are electrically connected to a first radio-frequency power source or second radio-frequency power source. The first reaction gas tubes double as a radio-frequency antenna, while the second reaction gas tubes double as an electrode.

Abstract: There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.

Abstract: Provided is a solar cell having a silicon substrate for a solar cell, the substrate being formed by allowing a high-purity polycrystalline silicon layer to grow on a surface of a base that is sliced from a polycrystalline silicon ingot which is obtained by melting metal-grade silicon and solidifying the silicon in one direction, wherein a layer having a non-doped amorphous silicon phase and a microcrystalline silicon phase mixed together is stacked on the high-purity polycrystalline silicon layer.

Abstract: A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by adding B to molten metallurgical grade silicon at an amount of 2×1018 cm?3 to 5×1019 cm?3 based on the concentration in the melt to produce the polycrystalline silicon ingot. With this structure, it is possible to easily obtain a polycrystalline silicon substrate having resistivity and the type of conductivity suitable for manufacture of a solar cell.

Abstract: A liquid-phase growth method for immersing a polycrystalline substrate in a melt in a crucible wherein crystal ingredients are dissolved, thereby growing poly crystals upon the substrate, comprises a first step for growing poly crystals to a predetermined thickness, and a second step for melting back a part of the poly crystals grown in the first step in the melt, wherein the relative position between the substrate and melt is changed between the first step and second step, bringing melt with different temperature into contact with the polycrystalline surface. The obtained poly crystals have properties rivaling those of poly crystals used in conventional solar cells but with little risk of trouble such as line breakage of grid electrodes in application to solar cells, and can be obtained in great quantities at low costs.

Abstract: There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.

Abstract: Provided is a continuous production method for crystalline silicon, including: retaining melted silicon in a crucible; solidifying a portion close to a surface of raw material silicon by providing a negative temperature gradient upward from the crucible; holding the solidified crystalline silicon by a pulling means; and pulling the solidified crystalline silicon at a predetermined rate, while shaping a sectional shape of the solidified crystalline silicon by bringing the solidified crystalline silicon in contact with an opened heater when the solidified crystalline silicon passes through an opening portion of the opened heater having an opening of a predetermined shape and maintained at a temperature higher than a melting point of the raw material silicon. The method allows continuous production of a crystalline silicon ingot having uniform crystallinity or impurity concentration and high quality at low cost even when low purity raw material silicon such as metallurgical grade silicon is used.

Abstract: According to the present invention, at the time of growing a silicon film by liquid epitaxy on a substrate, a bulk portion having substantially no void is formed and then a surface portion having plural protrusions that overhang in a lateral direction is formed. As a result, it is possible to form a silicon film having an uneven structure suitable for increasing optical path length on a surface layer of a semiconductor substrate without performing an additional process for forming an uneven structure. Therefore, it is possible to obtain a semiconductor substrate particularly suitable for a solar cell having an improved short circuit current property at low cost. Accordingly, it is possible to provide a solar cell having high efficiency and being low in price.

Abstract: A thin film polycrystalline solar cell which includes a substrate, a first semiconductor layer provided on the substrate and including Si highly doped with a conductivity-type controlling impurity, a second semiconductor layer provided on the first semiconductor layer and including polycrystalline Si slightly doped with a conductivity-type controlling impurity of the same conductivity-type as that of the first semiconductor layer, and a third semiconductor layer provided on the second semiconductor layer and highly doped with a conductivity-type controlling impurity of a conductivity-type opposite to that of the impurities for the doping of the first and the second semiconductor layers. Crystal grains grown from crystal nuclei generated in the first semiconductor layer are continuously grown to form the first and second semiconductor layers, are horizontally grown to contact neighboring crystal grains, and are perpendicularly grown to form an interface with the third semiconductor layer.

Abstract: A liquid-phase growth method for immersing a polycrystalline substrate in a melt in a crucible wherein crystal ingredients are dissolved, thereby growing poly crystals upon the substrate, comprises a first step for growing poly crystals to a predetermined thickness, and a second step for melting back a part of the poly crystals grown in the first step in the melt, wherein the relative position between the substrate and melt is changed between the first step and second step, bringing melt with different temperature into contact with the polycrystalline surface. The obtained poly crystals have properties rivaling those of poly crystals used in conventional solar cells but with little risk of trouble such as line breakage of grid electrodes in application to solar cells, and can be obtained in great quantities at low costs.

Abstract: In order to secure excellent short-circuit current and fill factor characteristics simultaneously, a thin film polycrystalline solar cell is provided which comprises a substrate, a first semiconductor layer provided on the substrate and comprised of Si highly doped with a conductivity-type controlling impurity, a second semiconductor layer provided on the first semiconductor layer and comprised of polycrystalline Si slightly doped with a conductivity-type controlling impurity of the same conductivity type as that of the first semiconductor layer, and a third semiconductor layer provided on the second semiconductor layer and highly doped with a conductivity-type controlling impurity of a conductivity type opposite to that of the impurities for the doping of the first and the second semiconductor layers, wherein crystal grains grown from crystal nuclei generated in the first semiconductor layer are continuously grown to form the first and the second semiconductor layers, are also horizontally grown to contact n

Abstract: The present invention provides a method for depositing polycrystal Si films, including n-type and p-type polycrystal Si films, using a material gas, a doping gas, and hydrogen gas. This method comprises a film-forming time-period having:(a) a time-period for depositing a film;(b) a time-period for diffusing dopants in the deposited film; and(c) a time-period for treating the film surface with hydrogen plasma. According to this method, an n-type or p-type polycrystal Si film with excellent crystallinity can be provided using the material gas and the doping gas. Further, this method is able to proceed at a low temperature and achieve satisfactory structural relaxation of the resulting film.

Abstract: A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.

Abstract: An apparatus for forming a deposited film which includes a film forming chamber, with a means to evacuate the inside of the chamber. A substrate holder for holding a substrate is located in the chamber. Starting material gas is supplied to the chamber to enable film formation. A light energy source is also provided to irradiate the substrate in order to heat its surface. The strength of the light energy is controlled to provide a non-uniform temperature distribution pattern on the substrate.

Abstract: A defect-free semiconductor device having a stacked layer structure formed on a substrate made of a material different from crystalline silicon, said stacked layer structure comprising an amorphous silicon layer on said substrate as a buffer layer and a polycrystalline silicon semiconductor active layer with a multilayered structure disposed on said amorphous silicon layer, said multilayered structure having at least a first polycrystalline silicon layer in non-junction forming contact with said amorphous silicon layer and a second polycrystalline silicon layer having a conductivity type opposite the conductivity type of said first polycrystalline silicon layer.

Abstract: A deposition film is formed on a substrate in a deposition space (A) by the chemical reaction between a gaseous precursor of a higher silicon halide or a higher halosilane formed in a decomposition space (B) and a separately-introduced gaseous, activated species of hydrogen, silane or a halosilane formed in a decomposition space (C).

Abstract: A process for forming a silicon-containing amorphous film on a substrate which comprises (a) step of depositing a silicon-containing amorphous film on said substrate and (b) step of irradiating plasma of inert gas to said silicon-containing amorphous film on deposited on the substrate in said step (a), wherein said step (a) and said step (b) are alternately repeated.

Abstract: A method for forming a deposition film, comprising decomposing a first compound containing germanium and halogen in an activation chamber by applying an energy to form an active species; separately introducing, into a film-forming chamber for forming a deposition film on a substrate, a second compound containing silicon and hydrogen and the active species, which is capable of chemical interaction with the second compound containing silicon and hydrogen; and applying to a mixture of the second compound and the active species at least one excitation energy selected from optical, thermal and discharge energies to excite the second compound in the mixture, thereby facilitating the formation of a deposition film on the substrate.

Abstract: An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the

Abstract: An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the