Abstract: A powder application apparatus includes a transport device, a powder supplier, a squeegee, and an ultra-high frequency vibration generator. The transport device is configured to move a sheet in a predetermined direction. The powder supplier is configured to supply powder on a surface of the sheet. The squeegee is positioned at a distance from the sheet, and the powder supplier is configured to adjust a thickness of the powder supplied onto the surface of the sheet. The ultra-high frequency vibration generator is configured to vibrate the squeegee at a frequency of 2 kHz or more and 300 kHz or less.

Abstract: A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by “?”, wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first

Abstract: A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y<[1?k*H(Ts)]/[k*H(Ts)?j*H(Tg)]*j*H(Tg)*t (I), y?1.58*10?4*(22.

Abstract: A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by “?”, wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first

Abstract: A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y<[1?k*H(Ts)]/[k*H(Ts)?j*H(Tg)]j*H(Tg)*t (I), y?1.58*10?4*(22.

Abstract: The manufacturing apparatus for a group-III compound semiconductor crystal according to the present disclosure comprises a reaction container. The reaction container has a raw material reaction section, a crystal growth section, and a gas flow channel. The raw material reaction section has a raw material reaction chamber, and a raw material gas nozzle. The crystal growth section has a substrate supporting member, and reactive gas nozzles. The gas flow channel includes a first flow channel, a second flow channel, and a connection portion. The first flow channel has a first opening, and the second flow channel has a second opening. The area of the second opening is configured to be larger than the area of the first opening. The connection portion connects the first opening and the second opening with each other. The gas flow channel forms a gas flow path in the reaction container. The substrate supporting member is disposed inside the gas flow path and located on the downstream side of the first opening.

Abstract: A group Ill nitride crystal manufacturing apparatus includes a raw material chamber generating a group Ill elemental oxide gas, and a growth chamber allowing the group Ill element oxide gas supplied from the raw material chamber to react with a nitrogen element-containing gas to generate a group III nitride crystal on a seed substrate, and the growth chamber incudes a decomposition promoting part promoting decomposition of the unreacted nitrogen element- containing gas between the seed substrate and an exhaust port for discharging the unreacted group Ill oxide gas and the nitrogen element-containing gas.

Abstract: An apparatus for producing a Group-III nitride semiconductor crystal includes a raw material reaction chamber, a raw material reactor which is provided in the raw material reaction chamber and configured to generate a Group-III element-containing gas, a board-holding member configured to hold a board in the raw material reaction chamber, a raw material nozzle configured to spray the Group-III element-containing gas toward the board, a nitrogen source nozzle configured to spray a nitrogen element-containing gas toward the board, in which, in a side view seen in a direction perpendicular to a vertical direction, a spray direction of the nitrogen source nozzle intersects with a spray direction of the raw material nozzle before the board, and a mixing part in which the Group-III element-containing gas and the nitrogen element-containing gas are mixed together is formed around the intersection as a center, a heater, and a rotation mechanism.

Abstract: A powder applying apparatus includes a transport device, a powder supplier, and a squeegee. The transport device moves a sheet in a predetermined direction. The powder supplier supplies powder on a surface of the sheet. The squeegee has a distance from the sheet, and the powder supplier adjusts the thickness of powder supplied onto the surface of the sheet. The squeegee vibrates at a frequency of 2 kHz or more and 300 kHz or less.

Abstract: An apparatus for producing a Group-III nitride semiconductor crystal includes a raw material reaction chamber, a raw material reactor which is provided in the raw material reaction chamber and generates a Group-III element-containing gas, a board-holding member configured to hold a board in the raw material reaction chamber, a raw material nozzle configured to spray the Group-III element-containing gas toward the board, a nitrogen source nozzle configured to spray a nitrogen element-containing gas toward the board, in which, in a side view seen in a direction perpendicular to a vertical direction, a spray direction of the nitrogen source nozzle intersects with a spray direction of the raw material nozzle before the board, and a mixing part in which the Group-III element-containing gas and the nitrogen element-containing gas are mixed together is formed around the intersection as a center, a heater for heating the raw material reaction chamber, the raw material nozzle, the nitrogen source nozzle, and the board