Abstract: The purpose of the present invention is to prevent a drop in secondary electron emission characteristics due to the inside wall of a chamber being covered by a noble metal film continuously formed by plasma sputtering, and so generate and maintain the plasma. After a noble metal film is formed on a given substrate and before a film is formed on a subsequent substrate, a secondary electron emission film comprising a material having a secondary electron emission coefficient higher than that of the noble metal is formed on the inner wall of the chamber.

Abstract: The purpose of the present invention is to prevent a drop in secondary electron emission characteristics due to the inside wall of a chamber being covered by a noble metal film continuously formed by plasma sputtering, and so generate and maintain the plasma. After a noble metal film is formed on a given substrate and before a film is formed on a subsequent substrate, a secondary electron emission film comprising a material having a secondary electron emission coefficient higher than that of the noble metal is formed on the inner wall of the chamber.

Abstract: The present invention provides an electronic component manufacturing method including a step of embedding a metal film. An embodiment of the present invention includes a first step of depositing a barrier layer containing titanium nitride on an object to be processed on which a concave part is formed and a second step of filling a low-melting-point metal directly on the barrier layer under a temperature condition allowing the low-melting-point metal to flow, by a PCM sputtering method while forming a magnetic field by a magnet unit including plural magnets which are arranged at grid points of a polygonal grid so as to have different polarities between the neighboring magnets.

Abstract: The present invention provides an electronic component manufacturing method including a step of embedding a metal film. An embodiment of the present invention includes a first step of depositing a barrier layer containing titanium nitride on an object to be processed on which a concave part is formed and a second step of filling a low-melting-point metal directly on the barrier layer under a temperature condition allowing the low-melting-point metal to flow, by a PCM sputtering method while forming a magnetic field by a magnet unit including plural magnets which are arranged at grid points of a polygonal grid so as to have different polarities between the neighboring magnets.

Abstract: It is an object of the invention to provide sputtering method and a sputtering device which can provide a uniform film-thickness distribution over the entire area of the substrate. A substrate as an object for a film-forming process and a target formed of a film-forming material are arranged in a container so as to oppose to each other, and a film is formed on a substrate while reciprocating a magnet arranged on the side of the target opposite from the substrate in parallel with the surface of the target, and rotating the substrate by a rotating unit (rotating mechanism). The film is formed while reciprocating the magnet and rotating the substrate by the rotating unit (rotating mechanism) after having set the film-thickness distribution of the thin film formed on the substrate along the longitudinal direction of the magnet to be thicker in the center portion of the substrate than the both end portion thereof.