Patents by Inventor Shunichi Yoshizawa

Shunichi Yoshizawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for selectively growing a conductive film to fill a contact hole
    Patent number: 6521531
    Abstract: Semiconductor device and method for manufacturing the same prevent the spread of a tungsten film out of an opening portion of a contact hole when the tungsten is grown in the contact hole and avoid inferior wiring shape and inter-wiring shirt-circuit. After a titanium/titanium nitride film is formed along an inner surface of the contact hole, a photo-resist film is applied. Then, the photo-resist film is etched away until a distance from an upper end of the contact hole to the surface of photo-resist film is not smaller than one-half of a width of the contact hole when the titanium/titanium nitride film is formed. After the titanium/titanium nitride film is etched by using the photo-resist as a mask, the photo-resist film is removed and a tungsten layer is selectively grown by using the titanium/titanium nitride film as a seed.
    Type: Grant
    Filed: December 22, 2000
    Date of Patent: February 18, 2003
    Assignee: United Microelectronics Corporation
    Inventor: Shunichi Yoshizawa
  • Semiconductor device and method for manufacturing the same
    Patent number: 6294451
    Abstract: Semiconductor device and method for manufacturing the same prevent the spread of a tungsten film out of an opening portion of a contact hole when the tungsten is grown in the contact hole and avoid inferior wiring shape and inter-wiring shirt-circuit. After a titanium/titanium nitride film is formed along an inner surface of the contact hole, a photo-resist film is applied. Then, the photo-resist film is etched away until a distance from an upper end of the contact hole to the surface of photo-resist film is not smaller than one-half of a width of the contact hole when the titanium/titanium nitride film is formed. After the titanium/titanium nitride film is etched by using the photo-resist as a mask, the photo-resist film is removed and a tungsten layer is selectively grown by using the titanium/titanium nitride film as a seed.
    Type: Grant
    Filed: March 14, 2000
    Date of Patent: September 25, 2001
    Assignee: Nippon Steel Corporation
    Inventor: Shunichi Yoshizawa
  • Semiconductor device and method for manufacturing the same
    Publication number: 20010000632
    Abstract: Semiconductor device and method for manufacturing the same prevent the spread of a tungsten film out of an opening portion of a contact hole when the tungsten is grown in the contact hole and avoid inferior wiring shape and inter-wiring shirt-circuit. After a titanium/titanium nitride film is formed along an inner surface of the contact hole, a photo-resist film is applied. Then, the photo-resist film is etched away until a distance from an upper end of the contact hole to the surface of photo-resist film is not smaller than one-half of a width of the contact hole when the titanium/titanium nitride film is formed. After the titanium/titanium nitride film is etched by using the photo-resist as a mask, the photo-resist film is removed and a tungsten layer is selectively grown by using the titanium/titanium nitride film as a seed.
    Type: Application
    Filed: December 22, 2000
    Publication date: May 3, 2001
    Inventor: Shunichi Yoshizawa
  • Semiconductor device having two-layer contact
    Patent number: 6204561
    Abstract: Semiconductor device and method for manufacturing the same prevent the spread of a tungsten film out of an opening portion of a contact hole when the tungsten is grown in the contact hole and avoid inferior wiring shape and inter-wiring shirt-circuit. After a titanium/titanium nitride film is formed along an inner surface of the contact hole, a photo-resist film is applied. Then, the photo-resist film is etched away until a distance from an upper end of the contact hole to the surface of photo-resist film is not smaller than one-half of a width of the contact hole when the titanium/titanium nitride film is formed. After the titanium/titanium nitride film is etched by using the photo-resist as a mask, the photo-resist film is removed and a tungsten layer is selectively grown by using the titanium/titanium nitride film as a seed.
    Type: Grant
    Filed: November 8, 1996
    Date of Patent: March 20, 2001
    Assignee: Nippon Steel Corporation
    Inventor: Shunichi Yoshizawa