Abstract: A monocrystalline silicon wafer fabricated such that a particular crystal plane, e.g., a crystal plane (100), included in crystal planes {100} is exposed on each of face and reverse sides of the monocrystalline silicon wafer is irradiated with a laser beam along a first direction parallel to the particular crystal plane and inclined to a particular crystal orientation, e.g., a crystal orientation [010], included in crystal orientations <100> at an angle of 5° or less, thereby forming a peel-off layer that functions as separation initiating points between a part of the monocrystalline silicon wafer that belongs to the face side thereof and a part of the monocrystalline silicon wafer that belongs to the reverse side thereof.

Abstract: A first peel-off layer extending along a side surface of a truncated cone that has a first bottom surface positioned near a face side of a wafer and a second bottom surface positioned within the wafer and smaller in diameter than the first bottom surface, and a second peel-off layer extending along the second bottom surface of the truncated cone are formed in the wafer. Then, external forces are exerted on the wafer thicknesswise of the wafer, thereby dividing the wafer along the first peel-off layer and the second peel-off layer that function as division initiating points.

Abstract: A wafer processing method includes the steps of forming a bonded wafer by bonding one surface of a first wafer which is chambered at an outer peripheral edge and includes a device region and an outer peripheral surplus region, to a second wafer, irradiating a laser beam along the outer peripheral edge of the first wafer and forming an annular modified region, thereby segmenting the first wafer into an outer peripheral annular portion and a central region, bonding an expand tape to the other surface of the first wafer, expanding the expand tape, thereby splitting the first wafer into the outer peripheral annular portion and the central region from the annular modified region as a starting point and breaking off the outer peripheral annular portion from the bonded wafer, and grinding the first wafer from the other surface to a finish thickness.

Abstract: A method of processing a plate-shaped workpiece is provided. The method includes the steps of sticking a protective member to a face side of the workpiece, holding the face side of the workpiece on a holding surface of a chuck table with the protective member interposed therebetween, grinding a reverse side of the workpiece held on the chuck table to thin the workpiece by rotating a grinding wheel including grinding stones that contain abrasive grains, while a grinding fluid is being supplied from a grinding fluid supply nozzle to the reverse side of the workpiece, and after the step of grinding the reverse side of the workpiece, treating the workpiece or the grinding stones by rotating the grinding wheel and bringing the grinding stones into contact with the reverse side of the workpiece, while stopping supplying the grinding fluid from the grinding fluid supply nozzle.

Abstract: A method of processing a plate-shaped workpiece is provided. The method includes the steps of sticking a protective member to a face side of the workpiece, holding the face side of the workpiece on a holding surface of a chuck table with the protective member interposed therebetween, grinding a reverse side of the workpiece held on the chuck table to thin the workpiece by rotating a grinding wheel including grinding stones that contain abrasive grains, while a grinding fluid is being supplied from a grinding fluid supply nozzle to the reverse side of the workpiece, and after the step of grinding the reverse side of the workpiece, treating the workpiece or the grinding stones by rotating the grinding wheel and bringing the grinding stones into contact with the reverse side of the workpiece, while stopping supplying the grinding fluid from the grinding fluid supply nozzle.

Abstract: A dividing method for a disk-shaped workpiece having a plurality of first division lines and a plurality of second division lines intersecting the first division lines. The workpiece is cut along the first and second division lines by using a cutting blade in a down cut manner as supplying a cutting fluid to the cutting blade, wherein the workpiece is fully cut in a thickness direction thereof to obtain a plurality of chips. The dividing method includes a first cutting step of cutting the workpiece along the first division lines and a second cutting step of cutting the workpiece along the second division lines. In at least the second cutting step, the outer circumference of the workpiece at the cut end of each second division line is not cut to form an uncut region, thereby suppressing the formation of waste chips.

Abstract: A dividing method for a disk-shaped workpiece having a plurality of first division lines and a plurality of second division lines intersecting the first division lines. The workpiece is cut along the first and second division lines by using a cutting blade in a down cut manner as supplying a cutting fluid to the cutting blade, wherein the workpiece is fully cut in a thickness direction thereof to obtain a plurality of chips. The dividing method includes a first cutting step of cutting the workpiece along the first division lines and a second cutting step of cutting the workpiece along the second division lines. In at least the second cutting step, the outer circumference of the workpiece at the cut end of each second division line is not cut to form an uncut region, thereby suppressing the formation of waste chips.

Abstract: A wafer having a device region and a peripheral surplus region surrounding the device region is divided into individual devices. The back side of the device region is ground to form an annular reinforcement part on the outer peripheral side thereof. A dicing tape is adhered to the back side of the wafer, and the wafer is irradiated with a laser beam from the face side so as to divide the wafer into the devices and to form break starting points in the annular reinforcement part. The dicing tape is expanded so as to disassemble the annular reinforcement part, with the break starting points as starting points, thereby separating the annular reinforcement part from the device region, and widening the interval between the adjacent devices. Since the annular reinforcement part is intact when the wafer is divided, handleability during the divided process is not spoiled.

Abstract: A wafer provided on a face side thereof with a device region where devices are demarcated by planned dividing lines and with a peripheral surplus region surrounding the device region is divided into the individual devices. In performing the dividing process, the back side of the device region is ground to form an annular reinforcement part on the outer peripheral side thereof, a dicing tape is adhered to the back side of the wafer, the wafer is irradiated with a laser beam from the face side so as to divide the wafer into the devices and to form break starting points in the annular reinforcement part, and the dicing tape is expanded so as to disassembly the annular reinforcement part, with the break starting points as starting points, thereby separating the annular reinforcement part from the device region, and to widen the interval between the adjacent devices.